• 한국세라믹학회지
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• 제32권12호
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• pp.1408-1416
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• 1995

Microstructure and ferroelectric properties of sol-gel derived PZT(52/48) and PT interlayered PZT(52/48) thin films on Pt/Ti/SiO2/Si substrates were investigated. Films were fabricated using Acetylacetone chelated PT and PZT(52/48) sols. PZT(52/48) thin films annealed at $700^{\circ}C$ for 20 min showed the rosette structure with the size of 1.2~1.6${\mu}{\textrm}{m}$ and the pyrochlore phse was contained. PT interlayered PZT thin films, which is inserted by PbTiO3 thin layer with the thickness of 130 $\AA$ between PZT thin film and electrode, consisted of a single perovskite phase after annealing above 55$0^{\circ}C$. They exhibited the uniform and columnar grains of 0.1~0.16${\mu}{\textrm}{m}$, which are applicable for microelectronic device including non-volatile memory. Typical P-E hysteresis loops could be obtained from PT interlayered PZT thin film at as low as the annealing temperature of 50$0^{\circ}C$. Ferroelectric properties of PT interlayered PZT thin films were improved as increasing annealing temperature up to $700^{\circ}C$, and then deteriorated at 75$0^{\circ}C$. PZT(52/48) and PT interlayered PZT(52/48) thin film annealed at $700^{\circ}C$ for 20 min displayed Ps=38.8$\mu$C/$\textrm{cm}^2$, Pr=10.0$\mu$C/$\textrm{cm}^2$, Ec=65.3 kV/cm and Ps=28.5$\mu$C/$\textrm{cm}^2$, Pr=9.8$\mu$C/$\textrm{cm}^2$, Ec=76.1 kV/cm, respectively.

• Smart Structures and Systems
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• 제22권3호
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• pp.259-276
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• 2018

This paper studies the energies and energy release rate (ERR) for the initially rotationally symmetric compressed (or stretched) in the inward (outward) radial direction of the PZT/Elastic/PZT sandwich circular plate with interface penny-shaped cracks. The investigations are made by utilizing the so-called three-dimensional linearized field equations and relations of electro-elasticity for piezoelectric materials. The quantities related to the initial stress state are determined within the scope of the classical linear theory of piezoelectricity. Mathematical formulation of the corresponding problem and determination of the quantities related to the stress-strain state which appear as a result of the action of the uniformly normal additional opening forces acting on the penny-shaped crack's edges are made within the scope of the aforementioned three-dimensional linearized field equations solution which is obtained with the use of the FEM modelling. Numerical results of the energies and ERR and the influence of the problem parameters on these quantities are presented and discussed for the PZT- 5H/Al/PZT-5H, PZT-4/Al/PZT-4, $BaTiO_3/Al/BaTiO_3$ and PZT-5H/StPZT-5H sandwich plates. In particular, it is established that the magnitude of the influence of the piezoelectricity and initial loading on the ERR increases with crack radius length.

• 통합자연과학논문집
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• 제8권4호
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• pp.244-249
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• 2015

The PZT thin films were deposited on Si(100) substrate using RF magnetron sputtering method. And the PZT thin films were post annealed at various temperatures to form perovskite phase. To analyze PZT thin films, surface profiler, XRD, XPS, CA, and SFE were used. The thickness increased from 536.5 to 833.2 nm as post annealing temperature increased. The perovskite PZT was observed from PZT-823 and pyrochlore PZT, $ZrO_2$, $TiO_2$, and perovskite $PbZrO_3$ were observed. From the XPS, the atomic percentages of Pb, Zr, Ti, and O were calculated and the portion of Pb increased to PZT-823 and decreased to PZT-923 and then increased to PZT-1023. Also, the CA and SFE was effected on post annealing temperature and as a function of atomic percentage of Pb, the CA and SFE was transformed.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.551-556
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• 2001

In this work, the recovery of etching damage in the etched PZT thin film with $O_2$ annealing has been studied. The PZT thin films were etched as a function of Cl$_2$/Ar and additive CF$_4$ into Cl$_2$(80%) /Ar(20%). the etch rates of PZT thin films were 1600$\AA$/min at Cl$_2$(80%)/Ar(20%) and 1970 $\AA$/min at 30% additive Cf$_4$ into Cl$_2$(80%)/Ar(20%). In order to recover the characteristics of etched PZT thin films, the etched PZT thin films were annealed in $O_2$ atmosphere at various temperatures. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ annealing process. The improvement of ferroelectric behavior is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensities of Pb-O, Zr-O and Ti-O peak increase and the chemical residue peak is reduced by $O_2$ annealing. From the atomic force microscopy (AFM) images. it shows that the surface morphology of re-annealed PZT thin films after etching is improved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.719-722
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• 2003

Ferroelectric $Pb(Zr_{1-x}Ti_x)O_3$ (PZT) films were deposited on (001) MgO single crystals using sol-gel method. Structural properties and surface morphologies of PZT films were investigated using an X-ray diffractometer and a scanning electron microscopy, respectively. The dielectric properties of PZT films were investigated with the dc bias field using interdigitated capacitors (IDC) which were fabricated on PZT films using a thick metal layer by photolithography and dry etching process. The small signal dielectric properties of PZT films were calculated by a modified conformal mapping method with low and high frequency data, such as capacitance measured by an impedance gain/phase analyzer at 100 kHz and reflection coefficient (S-parameter) measured by a HP 8510C vector network analyzer at 1 -20 GHz. The IDC on PZT films exhibited about 67% of capacitance change with an electric field of 135 kV/cm at 10 GHz. These PZT thin films can be applied to tunable microwave devices such as phase shifters, tunable resonators and tunable filters.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.947-952
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• 2004

Tb-doped lead zirconate titanate(Pb(Zr$\_$0.6/,Ti$\_$0.4/)O$_3$; PZT) thin films on Pt(111)/Ti/SiO$_2$/Si(100) substrates were fabricated by the sol-gel method. The effect on the structural and electrical properties of films measured according to Tb content. The dielectric and ferroelectric properties of Tb-doped PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. The relative dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.024, respectively. Typical value of the swichable remanent poaraization(2Pr) and the coercive filed of the PZT film capacitor for 0.3 mol% Tb-doped were 61.4 ${\mu}$C/cm$^2$ and 61.9 kV/cm, respectively. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.983-989
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• 2005

[ $PZT(Pb(Zr,Ti)O_3)$ ] thin films were deposited by multi-target reactive sputtering method on $RuO_2$ substrates. Pure perovskite phase PZT films could be obtained by introducing Ti-oxide seed layer on the $RuO_2$ substrates prior to PZT film deposition. The PZT films deposited on the $RuO_2$ substrates showed highly voltage-shifted hysteresis loop compared with the films deposited on the Pt substrates. The surface of $RuO_2$ substrate was found to be reduced to metallic Ru in vacuum at elevated temperature, which caused the formation of oxygen vacancies at the initial stage of PZT film deposition and gave rise to the voltage shift in the P-E hysteresis loop of the PZT capacitor. The fatigue characteristics of the PZT capacitors under unipolar wane electric field were different from those under bipolar wane. The fatigue test under unipolar wane showed the increase of polarization. It was thought that the ferroelectric domains which had been pinned by charged defects such as oxygen vacancies and the charged defects were reduced in number by combining with the electrons injected from the electrode under unipolar wave, resulting in the relaxation of the ferroelectric domains and the increase of polarization.

• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.92-98
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• 2015

The magnetoelectric characteristics on layered Ni-PZT-Ni, Co, Fe composites by epoxy bonding for magnetic field sensor were investigated in the low-frequency range. The ME coefficient of Ni-PZT-Ni, Ni-PZT-Co and Ni-PZT-Fe composites reaches a maximum of $200mV/cm{\cdot}Oe$ at $H_{dc}=110$ Oe, $106mV/cm{\cdot}Oe$ at $H_{dc}=90$ Oe and $87mV/cm{\cdot}Oe$ at $H_{dc}=160$ Oe, respectively. A trend of ME charateristics on Ni-PZT-Co, Ni-PZT-Fe composites was similar to that of Ni-PZT-Ni composites. The ME output voltage shows linearly proportional to ac field $H_{ac}$ and is about 0~150 mV at $H_{ac}$=0~7 Oe and f=110 Hz in the typical Ni-PZT-Ni sample. The frequency shift effect due to the load resistance $R_L$ shows that the frequency range for magnetic field sensor application can be modulated with appropriate load resistance $R_L$. This sample will allow for a low-magnetic ac field sensor in the low-frequency (near f=110 Hz).

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1229-1231
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• 1997

In this work, PZT(20/80)/(80/20) heterolayered thin film that has the tetragonal and rhombohedral structure was fabricated by Sol-Gel method spin-coated on the Pt/Ti/$SiO_2$/Si substrate by turns. The thickness of PZT-1 film obtained by six-times of drying/sintering process was about 480[nm]. This procedure was repeated several times to form PZT heterolayered thim film. PZT-5 thin films with top layer of tetragonal PZT(20/80) thin film showed dense grain structure and PZT-6 thin film with top layer of rhombohedral PZT(80/20) thin film showed the microstructure without rosette. Dielectric constant increased with increasing the number of coatings, and it was about 13S5 at PZT-6 thin film. Dielectric loss was not depend on the number of coatings.

• 한국세라믹학회지
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• 제17권2호
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• pp.80-88
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• 1980

The sintering phenomena and piezoelectric properties of PZT ceramics of composition $Pb(Zr_{0.54} Ti_{0.46})O_3$ were investigated when a small quantity of $La_2O_3$ , $LaMnO_3$, $LaCrO_3$ were added. The unwanted chemical composition change in PZT during sinterin porces du to PbO evaporation poses a severe problem in PZt manufacturinig. It is observed tat an addition of small amount of $LaMnO_3$ to PZT markedly decreases the evaporation of PbO during sintering . The green compact of (1-x) PZT.xLaMnO3(x=0.02~0.10) could be sintered of under O2 atmosphere alone with no significant loss of PbO. The planar coupling factor kp of the sintered $0.98Pb(Zr_{0.54} Ti_{0.46})O_{3.0.02}LaMnO}3$ is similar to that of commercial PZT 6A. Microstructure investigation shows that part of sintering process of $Pb(Zr, Ti)O_3$.$LaMnO_3$ system progresses via liquid phase sintering. It is believed that the evaporation of PbO in PZT sintering is restricted by the addition of $LaMnO_3$ due to the above phenomena. Furthermore the solid solution of $LaMnO_3$ in PZT causes diffuses phase transition.