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http://dx.doi.org/10.4313/JKEM.2004.17.9.947

Ferroelectric Properties of Tb-doped PZT Thin films Prepared by Sol-gel Process  

손영훈 (중앙대학교 전자전기공학부)
김경태 (중앙대학교 전자전기공학부)
김창일 (중앙대학교 전자전기공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.9, 2004 , pp. 947-952 More about this Journal
Abstract
Tb-doped lead zirconate titanate(Pb(Zr$\_$0.6/,Ti$\_$0.4/)O$_3$; PZT) thin films on Pt(111)/Ti/SiO$_2$/Si(100) substrates were fabricated by the sol-gel method. The effect on the structural and electrical properties of films measured according to Tb content. The dielectric and ferroelectric properties of Tb-doped PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. The relative dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.024, respectively. Typical value of the swichable remanent poaraization(2Pr) and the coercive filed of the PZT film capacitor for 0.3 mol% Tb-doped were 61.4 ${\mu}$C/cm$^2$ and 61.9 kV/cm, respectively. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.
Keywords
Ferroelectric; PZT; Dielectric; Sol-gel; Fatigue;
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