• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.76-76
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• 2011

Polymer-fullerene based bulk heterojunction (BHJ) solar cells can be fabricated in large area using low-cost roll-to-roll manufacturing methods. However, because of the low mobility of the BHJ materials, there is competition between the sweep-out of the photogenerated carriers by the built-in potential and recombination within the thin BHJ film [12-15]. Useful film thicknesses are limited by recombination. Thus, there is a need to increase the absorption by the BHJ film without increasing film thickness. Metal nanoparticles exhibit localized surface plasmon resonances (LSPR) which couple strongly to the incident light. In addition, relatively large metallic nanoparticles can reflect and scatter the light and thereby increase the optical path length within the BHJ film. Thus, the addition of metal nanoparticles into BHJ films offers the possibility of enhanced absorption and correspondingly enhanced photo-generation of mobile carriers. In this work, we have demonstrated several positive effects of shape controlled Au and Ag nanoparticles in organic P3HT/PC70BM, PCDTBT/PC70BM, Si-PCPDTBT/PC70BM BHJ-based PV devices. The use of an optimized concentration of Au and Ag nanomaterials in the BHJ film increases Jsc, FF, and the IPCE. These improvements result from a combination of enhanced light absorption caused by the light scattering of the nanomaterials in an active layer. Some of the metals induce the plasmon light concentration at specific wavelength. Moreover, improved charge transport results in low series resistance.

• 생명과학회지
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• 제17권2호통권82호
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• pp.235-240
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• 2007

본 연구는 Affymetrix Arabidopsis DNA chip을 이용하여 비 병원성 인자인 AvrRpt2 단백질에 의해서 특이적으로 전사 과정이 조절되는 애기장대 유전자들을 분리하고 병 저항성 방어체계와 관련한 이들 유전자들의 기능 분석을 시도하였다. 그 중에서 먼저 식물 호르몬인 ethylene의 신호 조절에 관여하는 ERFs (ethylene-responsive element binding factors) 전사조절 유전자 family 중에서 Bla subfamily 그룹으로 알려져 있는 AtERF11 유전자의 병 저항성 관련 기능을 규명하였다. 저항성 유전자 RPS2가 없는 경우에는 비 병원성 인자인 AvrRpt2 단백질은 기주 식물체내의 기초 병저항성을 감소시키고 병원성 세균의 증식을 향상시켜서 병증을 증대시키는 effector로 작용한다는 기존의 연구결과와 유사하게, 저항성 유전자 RPS2가 없는 조건에서 AtERF11 유전자의 발현이 AvrRpt2 단백질의 작용에 의해서 특이적으로 감소되는 것을 확인하였다. 이러한 결과를 바탕으로 AtERF11 유전자는 식물체의 병 저항성 방어기작에 있어서 positive regulator로서 작용하기 때문에 effector로 작용하는 AvrRpt2 단백질에 의해서 조절되는 것으로 추측하였다. 본 가설을 증명하기 위해 AtERF11의 발현을 증폭시킨 애기장대 형질전화체를 제작하고 P. syringae pv. tomato DC 3000에 대한 병저항성을 실험하였다. AtERF11 유전자가 대량 발현하는 형질전화 된 애기장대에서는 야생종에 비해 대략 100배 이상 세균의 증식이 억제되는 강력한 병저항성을 가진다는 것을 검증하였다.

• Journal of Power Electronics
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• 제17권1호
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• pp.222-231
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• 2017

In this paper, a new architecture for a cost-effective power conditioning systems (PCS) using a single-sourced asymmetric cascaded H-bridge multilevel inverter (MLI) for photovoltaic (PV) applications is proposed. The asymmetric MLI topology has a reduced number of parts compared to the symmetrical type for the same number of voltage level. However, the modulation index threshold related to the drop in the number of levels of the inverter output is higher than that of the symmetrical MLI. This problem results in a modulation index limitation which is relatively higher than that of the symmetrical MLI. Hence, an extra voltage pre-regulator becomes a necessary component in the PCS under a wide operating bias variation. In addition to pre-stage voltage regulation for the constant MLI dc-links, another auxiliary pre-regulator should provide isolation and voltage balance among the multiple H-bridge cells in the asymmetrical MLI as well as the symmetrical ones. The proposed PCS uses a single-ended DC-DC converter topology with a coupled inductor and charge-pump circuit to satisfy all of the aforementioned requirements. Since the proposed integrated-type voltage pre-regulator circuit uses only a single MOSFET switch and a single magnetic component, the size and cost of the PCS is an optimal trade-off. In addition, the voltage balance between the separate H-bridge cells is automatically maintained by the number of turns in the coupled inductor transformer regardless of the duty cycle, which eliminates the need for an extra voltage regulator for the auxiliary H-bridge in MLIs. The voltage balance is also maintained under the discontinuous conduction mode (DCM). Thus, the PCS is also operational during light load conditions. The proposed architecture can apply the module-integrated converter (MIC) concept to perform distributed MPPT. The proposed architecture is analyzed and verified for a 7-level asymmetric MLI, using simulation results and a hardware implementation.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.281-284
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• 2007

Recently, we have developed p-i-n a-Si:H single junction thin film solar cells with RF (13.56MHz) plasma enhanced chemical vapor deposition (PECVD) system, and also successfully fabricated the mini modules ($>300cm^2$), using the laser patterning technique to form an integrated series connection. The efficiency of a mini module was 7.4% ($Area=305cm^2$, Isc=0.25A, Voc=14.74V, FF=62%). To fabricate large area modules, it is important to optimise the integrated series connection, without damaging the cell. We have newly installed the laser patterning equipment that consists of two different lasers, $SHG-YVO_4$ (${\lambda}=0.532{\mu}m$) and YAG (${\lambda}=1.064{\mu}m$). The mini-modules are formed through several scribed lines such as pattern-l (front TCO), pattern-2 (PV layers) and pattern-3 (BR/back contact). However, in the case of pattern-3, a high-energy part of laser shot damaged the textured surface of the front TCO, so that the resistance between the each cells decreases due to an incomplete isolation. In this study, the re-deposition of SnOx from the front TCO, Zn (BR layer) and Al (back contact) on the sidewalls of pattern-3 scribed lines was observed. Moreover, re-crystallization of a-Si:H layers due to thermal damage by laser patterning was evaluated. These cause an increase of a leakage current, result in a low efficiency of module. To optimize a-Si:H single junction thin film modules, a laser beam profile was changed, and its effect on isolation of scribed lines is discussed in this paper.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.471.2-471.2
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• 2014

We demonstrate here that an improvement in precursor film density (green density) leads to a great enhancement in the photovoltaic performance of CuInSe2 (CISe) thin film solar cells fabricated with Cu-In nanoparticle precursor films via chemical solution deposition. A cold-isostatic pressing (CIP) technique was applied to uniformly compress the precursor film over the entire surface (measuring 3~4 cm2) and was found to increase its relative density (particle packing density) by ca. 20%, which resulted in an appreciable improvement in the microstructural features of the sintered CISe film in terms of lower porosity, reduced grain boundaries, and a more uniform surface morphology. The low-bandgap (Eg=1.0 eV) CISe PV devices with the CIP-treated film exhibited greatly enhanced open-circuit voltage (VOC, from 0.265 V to 0.413 V) and fill factor (FF, from 0.34 to 0.55), as compared to the control devices. As a consequence, an almost 3-fold increase in the average power conversion efficiency, 3.0 to 8.2% (with the highest value of 9.02%), was realized without an anti-reflection coating. A diode analysis revealed that the enhanced VOC and FF were essentially attributed to the reduced reverse saturation current density (j0) and diode ideality factor (n). This is associated with the suppressed recombination, likely due to the reduction in recombination sites such as grain/air surfaces (pores), inter-granular interfaces, and defective CISe/CdS junctions in the CIP-treated device. From the temperature dependences of VOC, it was confirmed that the CIP-treated devices suffer less from interface recombination.

• Current Photovoltaic Research
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• 제3권3호
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• Current Photovoltaic Research
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• 제8권4호
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• pp.114-119
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• 2020

In this study, Mitigation of Potential-induced degradation (PID) for PERC solar cells using SiO2 Structure of ARC layer. The conventional PID test was conducted with a cell-level test based on the IEC-62804 test standard, but a copper PID test device was manufactured to increase the PID detection rate. The accelerated aging test was conducted by maintaining 96 hours with a potential difference of 1000 V at a temperature of 60℃. As a result, the PERC solar cell of SiO2-Free ARC structure decreased 22.11% compared to the initial efficiency, and the PERC solar cell of the Upper-SiO2 ARC structure decreased 30.78% of the initial efficiency and the PID reliability was not good. However, the PERC solar cell with the lower-SiO2 ARC structure reduced only 2.44%, effectively mitigating the degradation of PID. Na+ ions in the cover glass generate PID on the surface of the PERC solar cell. In order to prevent PID, the structure of SiNx and SiO2 thin films of the ARC layer is important. SiO2 thin film must be deposited on bottom of ARC layer and the surface of the PERC solar cell N-type emitter to prevent surface recombination and stacking fault defects of the PERC solar cell and mitigated PID degradation.

• Current Photovoltaic Research
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• 제11권3호
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• pp.67-74
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• 2023

The earth-abundant element-based Cu₂ZnSn(S,Se)₄ (CZTSSe) thin film solar cells (TFSCs) have attracted greater attention in the photovoltaic (PV) community due to their rapid development in device power conversion efficiency (PCE) >13%. In the present work, we demonstrated the fine-tuning of the bandgap in the CZTSSe TFSCs by altering the sulfur (S) to the selenium (Se) chalcogenide ratio. To achieve this, the CZTSSe absorber layers are fabricated with different S/(S+Se) ratios from 0.02 to 0.08 of their weight percentage. Further compositional, morphological, and optoelectronic properties are studied using various characterization techniques. It is observed that the change in the S/(S+Se) ratios has minimal impact on the overall Cu/(Zn+Sn) composition ratio. In contrast, the S and Se content within the CZTSSe absorber layer gets altered with a change in the S/(S+Se) ratio. It also influences the overall absorber quality and gets worse at higher S/(S+Se). Furthermore, the device performance evaluated for similar CZTSSe TFSCs showed a linear increase and decrease in the open circuit voltage (V_oc) and short circuit current density (J_sc) of the device with an increasing S/(S+Se) ratio. The external quantum efficiency (EQE) measured also exhibited a linear blue shift in absorption edge, increasing the bandgap from 1.056 eV to 1.228 eV, respectively.

• Molecules and Cells
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• 제38권6호
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• pp.540-547
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• 2015

Attention deficit/hyperactivity disorder (ADHD) is one of the most common neurodevelopmental disorders, affecting approximately 5% of children. However, the neural mechanisms underlying its development and treatment are yet to be elucidated. In this study, we report that an ADHD mouse model, which harbors a deletion in the Git1 locus, exhibits severe astrocytosis in the globus pallidus (GP) and thalamic reticular nucleus (TRN), which send modulatory GABAergic inputs to the thalamus. A moderate level of astrocytosis was displayed in other regions of the basal ganglia pathway, including the ventrobasal thalamus and cortex, but not in other brain regions, such as the caudate putamen, basolateral amygdala, and hippocampal CA1. This basal ganglia circuit-selective astrocytosis was detected in both in adult (2-3 months old) and juvenile (4 weeks old) $Git1^{\check{s}/\check{s}}$ mice, suggesting a developmental origin. Astrocytes play an active role in the developing synaptic circuit; therefore, we performed an immunohistochemical analysis of synaptic markers. We detected increased and decreased levels of GABA and parvalbumin (PV), respectively, in the GP. This suggests that astrocytosis may alter synaptic transmission in the basal ganglia. Intriguingly, increased GABA expression colocalized with the astrocyte marker, GFAP, indicative of an astrocytic origin. Collectively, these results suggest that defects in basal ganglia circuitry, leading to impaired inhibitory modulation of the thalamus, are neural correlates for the ADHD-associated behavioral manifestations in $Git1^{\check{s}/\check{s}}$ mice.

• 정보처리학회논문지:컴퓨터 및 통신 시스템
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• 제5권10호
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• pp.353-360
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• 2016

여러 개의 태양전지들이 붙어 있는 태양광 패널을 이용하여 전력을 생산하는 태양광 발전은 최근 신재생 에너지 기술로 빠르게 성장하고 있는 분야이다. 하지만 태양광발전의 단점 중 하나인 불규칙한 전력 생산문제로 인해, 장비 및 패널 결함에 빠르게 대응하지 못하는 문제가 발생한다. 이 연구에서는 다양한 기후데이터와 패널 정보를 이용하여 태양광발전량 예측 방법들을 비교하여 최적의 예측 알고리즘을 평가하고 이를 기반으로 태양광발전소 결함 검출 시스템을 개발하여 국내 태양광 발전소에 적용한 사례를 기술한다.