• Korean Journal of Food Science and Technology
• /
• v.36 no.3
• /
• pp.416-422
• /
• 2004

Efficacy of surface sterilization and physicochemical properties of electrolyzed water manufactured depending on electrolyte, materials, and type of electrolytic diaphragm used were investigated. Physical properties of electrolyzed water manufactured from diaphragm system showed the highest effectiveness under at distance between diaphragms of 1.0 mm and 20% NaCl supplying rate of 6 mL/min. ORP, HClO (should defined) content, and pH at above conditions were 1,170 mV, 100 ppm, and 2.5, respectively. Two-stage electrolyzed system was more effective than one-stage one. Electrolyzed water manufactured from non-diaphragm system at 4 mL/min supplying rate of 20% NaCl was similar to the most effective diaphragm system, whereas ORP, HClO content, and pH were 800 mV, 200 ppm, and 9, respectively. Sealed electrolyzed water could be preserved more than one month at room temperature with ORPs of 750 and 1,150 mV in non-diaphragm and diaphragm systems, respectively, and at HClO content of 100 ppm. Physicochemical properties of electrolyzed water manufactured from electrolytic diaphragm of $IrO_{2}$ and Pt+Ir were more effective than that of Pt. ORP and HClO contents of electrolyzed water manufactured from various electrolytes were high in order of NaCl>KCl>$CaCl_{2}$, whereas no differences were observed among electrolytes in sterilization efficacy. Twelve kinds of microorganisms tested (initial total count, $10^{5}-10^{6}CFU/mL$) were sterilized within 1-2 min by electrolyzed water.

• Journal of Advanced Marine Engineering and Technology
• /
• v.30 no.8
• /
• pp.927-933
• /
• 2006

The structural and electrical characteristics of PLZT thin films fabricated onto $Pt/IrO_2/Ir/Ti/SiO_2/Si$ substrates by a pulsed laser deposition were investigated to develop the high dielectric thin films for capacitor layer of semiconductor memory devices The slim region 14/50/50 PLZT thin films were fabricated by PLD and estimated the characteristics for memory application 14/50/50 PLZT thin films have crystallize into perovskite structure at the $600^{\circ}C$ deposition temperature, 200 mTorr of oxygen pressure, and 2 $J/cm^2$ of laser energy density. In this condition PLZT thin films had the dielectric constant as high as 985, storage charge density 8.17 ${\mu}C/cm^2$ and charging time 0.20 ns. Leakage current density was less than $10^{-10}A/cm^2$ up to 5 V bias voltage.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2006.06a
• /
• pp.34-35
• /
• 2006

• Proceedings of the Korean Magnestics Society Conference
• /
• 2006.11a
• /
• pp.40-41
• /
• 2006

• Bulletin of the Korean Chemical Society
• /
• v.32 no.6
• /
• pp.2105-2108
• /
• 2011

• Proceedings of the Korean Ceranic Society Conference
• /
• 2004.10a
• /
• pp.83.2-83.2
• /
• 2004

• Archives of Pharmacal Research
• /
• v.15 no.4
• /
• pp.336-342
• /
• 1992

Ten [$Pd^{II}$(dicarboxylato)(1, 2-diaminocyclohexane)] complexes were prepared after the antitumor-active Pt(II)1, 2-diaminocyclohexane complexes as the cisplatin analogues of palladium series. They were characterized by means of elemental analysis, IR and NMR spectroscopy. As a result, the dicarboxylate ligands were conformed to be chelated with Pd(II) within the scope studied. The stability differences beween the dicarboxylato complexes according to the chelate ring size could not be differentiated due to generally lower thermodynamic stability of the dicarboxylato Pd(II) complexes.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1997.02a
• /
• pp.38-38
• /
• 1997

• Proceedings of the Korean Ceranic Society Conference
• /
• 2000.10a
• /
• pp.145.1-145
• /
• 2000

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2009.10a
• /
• pp.134-134
• /
• 2009

원자층 증착법을 이용하여 platinum group metal(Ru, Ir, Pt). metal nitride(TaN, TiN, AlN), 그리고 metal oxide($Al_2O_3$, $TiO_2$)을 증착하고, 미세구조와 공정 변수가 내산화성, 내부식성, 저항 및 온도저항계수에 미치는 영향을 연구하였다. proto-type의 전자저항막 제조를 통해 종래의 TaN 전자저항막에 비해 우수한 내부식성 및 내산화성을 가짐을 확인하였다.