• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.1
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• pp.29-36
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• 2009

In this paper, the design and implementation of LNA and down-mixer using 90 nm CMOS process are presented for 60 GHz band WPAN receiver. In order to extract characteristics of the transistor used to design each elements under the optimum bias conditions, the S-parameter of the manufactured cascode topology was measured and the effect of the RF pad was removed. Measured results of 3-stages cascode type LNA the gain of 25 dB and noise figure of 7 dB. Balanced type down-mixer with a balun at LO input port shows the conversion gain of 12.5 dB within IF frequency($8.5{\sim}11.5\;GHz$) and input PldB of -7 dBm. The size and power consumption of LNA and down-mixer are $0.8{\times}0.6\;mm^2$, 43 mW and $0.85{\times}0.85\;mm^2$, 1.2 mW, respectively.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1852-1854
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• 1999

In order to enhance satellite communication system performance, filters are required with the characteristics of sharp skirt, low insertion loss, and high power handling capability. But the performance of microwave passive filters is significantly declined by the conduction losses, especially in case of planar structures using film conductors. By using high temperature superconducting(HTS) film material as the conductor, higher performance could be expected. We have designed and developed narrow bandpass filters using haripin-type superconducting microstrip line for satellite communication. High quality superconducting YBCO thin films have been grown on MgO substrates by pulsed laser deposition(PLD) The deposited YBCO films were patterned by conventional wet-etching process. The transition temperatures of these films had shown 86 - 89 K. The film thicknesses were about 500 nm. Experimental results are presented for the insertion loss and return loss of the filter at 60 K.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.174-174
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• 2003

Highly (111)-oriented PZT [Pb(Zrl-xTix)O3] thin films in the Zr-rich rhombohedral phase-field were successfully fabricated on Pt(111)/Ti/SiO2/Si substrates by combining PLD method with sol-gel process. These highly (111)-oriented films can be used as model systems for polarized Raman scattering study of PZT in the rhombohedral-Phase field because the (111)-direction is the principal off-center axis of the rhombohedral ferroelectricity. For this purpose, we have fabricated PZT films employing two distinctive compositions : one with Zr/Ti = 90/10 (abbreviated as PZT90/10) and the other with Zr/Ti= 60/40 (PZT60/40). The PZT90/10 film belongs to the octahedrally distorted FR(LT) phase with a cell-doubled structure, whereas the PZT60/40 is in the high-temperature FR(HT) phase-field at room temperature. To clearly separate E(TO) phonon modes from Al(TO) modes of the (111)-oriented rhombohedral film, we have suitably devised Z(X,Y)Z and Z(X,X)Z backscattering geometries for E(TO) and Al (TO), respectively. The polarized scattering experiment demonstrated that both types of (111)-oriented rhombohedral films closely followed the Raman selection rule.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.121-124
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• 2012

The characteristics of Ga-doped zinc oxide (GZO) thin films deposited at different deposition temperatures (TS~250 to $550^{\circ}C$) on 4H-SiC have been investigated. Structural and electrical properties of GZO thin film on n-type 4H-SiC(0001) were investigated by using x-ray diffraction(XRD), atomic force microscopy(AFM), Hall effect measurement, barrier height from I-V curve and Auger electron spectroscopy(AES). XRD $2\theta$ scan shows GZO thin film has preferential orientation with c-axis perpendicular to SiC substrate surface. The lowest resistivity ($\sim1.9{\times}10^{-4}{\Omega}cm$) was observed for the GZO thin film deposited at $400^{\circ}C$. As deposition temperature increases, barrier height between GZO and SiC was increased. Whereas, resistivity of GZO thin films as well as barrier height between GZO and SiC were increased after annealing process in air atmosphere. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ ions and oxygen vacancy may affect the electrical properties of GZO films on SiC.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.475-479
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• 2007

Pulsed laser deposition was utilized to grow MnS thin films on c-sapphire substrate using a KrF excimer laser at growth temperatures that ranged from room temperature to $700^{\circ}C$. The results of X-ray diffraction (XRD) and UV-visible spectroscopy were employed to investigate the structural and optical properties of the MnS films. While the growth rate decreased as $T_s$ increased, the overall quality of the film improved. The highest quality MnS film was obtained at $700^{\circ}C$. Variations in the $T_s$ resulted in the MnS films exhibiting different growth mechanisms. The oriented (200) rocksalt MnS film was grown at room temperature. In the case of higher $T_s,\;200{\sim}500^{\circ}C$, the films consisted of mixed phases of rocksalt and wurtzite. The main structure of the films was altered to (111) rocksalt when the temperature was increased to in excess of $600^{\circ}C$. This behavior may very well be the result of elements such as surface energy and atomic arrangement during the growth process. The optical band gap of the obtained ${\alpha}-MnS$ film was estimated to be 3.32 eV.

• Journal of the Korean Society of Safety
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• v.16 no.4
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• pp.188-193
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• 2001

From July 1st 2002, the Product Liability Act will be efficacious in Korea, and its influence will be prevalent over all industrial folds. However, little attention has been paid to the Act and its influence in the area of Industrial Safety. Therefore, this paper aimed to call the people's attention to them, and to suggest some points for counterplans in that n As for counterplans to the Product Liability, there are two different approaches - Product Liability Prevention (PLP) and Product Liability Defense(PLD). Between them, PLP is more safety-oriented approach, and especially Product Safety(PS) will be the core of it. Related with this, it was noted that productive goods which are utilized as productive materials or tools in the later process or industries could be troublesome when the Act is efficacious. As a solution, the necessity of cooperation among manufacturing plants belong to the similar industry, and of development of qualitative techniques applicable to analyses of consumers behavior was emphasized. Ant the interest and participation of Human Behavioral Scientists, Ergonomists as well as Consumer Psychologists were called upon. Also, it was suggested that an integrative approach including administrative or governmental management system for industrial goods should be developed.

• Progress in Superconductivity and Cryogenics
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• v.19 no.3
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• pp.13-17
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• 2017

We investigated the effect of self-assembled BSO nano-defects as pinning centers in BSO-added GdBCO films when the thicknesses of films were varied. 3.5 vol. % BSO-added GdBCO films with varying thicknesses from 200 nm to 1000 nm were deposited on $SrTiO_3$ (STO) substrate by using pulsed laser deposition (PLD) process. For the films with thicknesses of 400 nm and 600 nm, 'anomaly shoulders' in $J_c-H$ characteristic curves were observed near the matching field. The anomaly shoulders appeared in the field dependence of $J_c$ may be attributed to the existence of double pinning mechanisms in thin films. The fit to the pinning force density as a function of reduced field h ($H/H_{irr}$) using the Dew-Hughes' scaling law shows that both the 400 nm- and the 600 nm-thick films have double pinning mechanisms while the other films have a single pinning mechanism. These results indicate that the self-assembled property of BSO result in different role as pinning centers with different thickness.

• Progress in Superconductivity and Cryogenics
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• v.14 no.4
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• pp.5-11
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• 2012

In this review article, we focus on various co-evaporation technologies developed for the fabrication of high performance $REBa_2Cu_3O_{7-{\delta}}$ (RE: Y and Rare earth elements, REBCO) superconducting films. Compared with other manufacturing technologies for REBCO films such as sputtering, pulsed laser deposition (PLD), metal-organic deposition (MOD), and metal organic chemical vapor deposition (MOCVD), the co-evaporation method has a strong advantage of higher deposition rate because metal sources can be used as precursor materials. After the first attempt to produce REBCO films by the co-evaporation method in 1987, various co-evaporation technologies for high performance REBCO films have been developed during last several decades. The key points of each co-evaporation technology are reviewed in this article, which enables us to have a good insight into a new high throughput process, called as a Reactive Co-Evaporation by Deposition and Reaction (RCE-DR).

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.533-534
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• 2006

1mm-thick BLT ceramics were sintered in accordance with a bulk ceramic fabrication process. All XRD peaks detected in the sintered ceramics were indexed as the Bi-layered perovskite structure without secondary phases. Density was increased with increasing the sintering temperature up to $1050\;^{\circ}C$ and the maximum value was about 98% of the theoretical density. The remanent polarization (2Pr) value of BLT ceramic sintered at $1050\;^{\circ}C$ was approximately $6.5\;{\mu}C/cm^2$ at the applied voltage of 4.5kV. From these results, a BLT ceramic target for plused laser deposition (PLD) system was successfully fabricated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.276-277
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• 2006

1mm-thick BLT ceramics were sintered in accordance with a bulk ceramic fabrication process. AII XRD peaks detected in the sintered ceramics were indexed as the Bi-layered perovskite structure without secondary phases. Density was increased with increasing the sintering temperature up to $1050^{\circ}C$ and the maximum value was about 98% of the theoretical density. The remanent polarization (2Pr) value of BLT ceramic sintered at $1050^{\circ}C$ was approximately $6.5\;{\mu}C/cm^2$ at the applied voltage of 4.5 kV. The calculated electromechanical coupling factor ($k_t$) of it was about 5% and the mechanical quality factor (Qm) was about 2200. From these results, a BLT ceramic target for pulsed laser deposition (PLD) system was successfully fabricated.