• 한국정밀공학회지
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• 제25권8호
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• pp.88-95
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• 2008

Young's modulus of electroplated nickel thin film is systematically investigated using the resonance method of atomic force microscope. Thin layers of nickel to be measured are electroplated onto the surface of an AFM silicon cantilever and Young's modulus of plated nickel film is investigated as a function of process conditions such as the plating temperature and applied current density. It is found that Young's modulus of plated nickel thin film is as high as that of bulk nickel at low plating temperature or low current density, but decreases with increasing plating temperature or current density. The results imply that the plating rate increases as increasing the plating temperature or current density, therefore, slow plating rate produces a dense plating material due to the sufficient time fur nickel ions to form a dense coating.

• 공업화학
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• 제19권2호
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• pp.228-235
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• 2008

니켈 표면처리 공정에서 전류밀도에 따라 니켈의 전착두께가 증가되었으며, 증가폭은 $6{\sim}10A/dm^2$에서 저전류보다 높게 나타났다. 전류밀도를 측정하기 위해 Hull-cell 분석을 수행 하였다. 최적 공정온도는 $60^{\circ}C$, pH는 3.5~4.0이었고, 전해용액 중 니켈이온의 농도는 300 g/L 이상에서 농도에 따라 전착두께가 증가되었다. 전류밀도에 따라 용액 중 니켈이온 감소 속도가 증가되었는데, 이는 음극표면에서 니켈 전착 량에 따른 전착두께의 증가를 나타낸다. 그러나 전착속도가 빠를 경우 니켈 전착 층의 치밀성은 저하되며, 표면의 상태는 불규칙하게 변화된다. 니켈이온의 전착과정이 불규칙하게 일어나 조직의 pin hole 등을 야기해 표면특성을 저하시키는 것으로 확인되었다. 광택니켈 전착 후 25 h 내식을 유지한 결과, 낮은 전류밀도를 유지하는 것이 내식특성이 우수한 것으로 나타났다. 프로그램모사 결과, 전류밀도가 높아질수록 확산 층의 두께는 증가하며, 음극표면의 농도는 낮아진다. 농도분포는 낮은 전류밀도에서 고른 분포를 나타내었으며 이는 일정한 전착두께를 예측할 수 있다. 생산성 저하를 예방하기 위해 공정시간은 크게 변화시키지 않았으며, 전류밀도와 전착두께를 변화시키면서 공정변수를 조절하였다. 본 연구의 표면분석 결과 조직특성이나 내식성 등의 표면 물성이 낮은 전류밀도를 사용할 경우에 더욱 우수한 것으로 나타났다.

• 한국재료학회지
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• 제22권7호
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• pp.374-378
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• 2012

In an effort to overcome the problems which arise when fabricating high-aspect-ratio TSV(through silicon via), we performed experiments involving the void-free Cu filling of a TSV(10~20 ${\mu}m$ in diameter with an aspect ratio of 5~7) by controlling the plating DC current density and the additive SPS concentration. Initially, the copper deposit growth mode in and around the trench and the TSV was estimated by the change in the plating DC current density. According to the variation of the plating current density, the deposition rate during Cu electroplating differed at the top and the bottom of the trench. Specifically, at a current density 2.5 mA/$cm^2$, the deposition rate in the corner of the trench was lower than that at the top and on the bottom sides. From this result, we confirmed that a plating current density 2.5 mA/$cm^2$ is very useful for void-free Cu filling of a TSV. In order to reduce the plating time, we attempted TSV Cu filling by controlling the accelerator SPS concentration at a plating current density of 2.5 mA/$cm^2$. A TSV with a diameter 10 ${\mu}m$ and an aspect ratio of 7 was filled completely with Cu plating material in 90 min at a current density 2.5 mA/$cm^2$ with an addition of SPS at 50 mg/L. Finally, we found that TSV can be filled rapidly with plated Cu without voids by controlling the SPS concentration at the optimized plating current density.

• 한국표면공학회지
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• 제44권1호
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• pp.1-6
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• 2011

A NiW functional alloy plating was investigated as variables of metal ion concentration, complexing agent, temperature, pH and applied current density. Even if numerous studies on reaction mechanism of NiW induced codeposition were carried out during couples of decade, it has not been acceptable reaction mechanism. This study was focused on the effect of the plating variables on the alloy composition in the NiW alloy plating. Applied current density could control mainly the alloy composition rather than other plating variables. It has also been confirmed that the functional alloy plating such as layered or gradient plating was possible by controlling applied current density.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2000년도 전력전자학술대회 논문집
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• pp.685-688
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• 2000

Pulse plating is about to deposit material at high current density compared to conventional DC plating. For example pulse plating can get more fine grain can improve adhension and metal distribution and current efficiency can reduce internal stress and crack. therefore we studied pulsed power supply which has high current density and improve deposition quality and increase plating speed in this paper.

• 환경위생공학
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• 제16권2호
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• pp.38-46
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• 2001

In this work, the heterogeneous ion exchange membrane was used in a electrodialysis apparatus to treat a Ni planting rinse water because the heterogeneous ion exchange membrane was excellent efficiency as compared with low manufacturing cost, was easy to make, and had a good mechanical properties. For a regeneration of membrane and to obtain the optimal condition for a scale-up of apparatus after treating Ni plating rinse water, we would find about the limiting current density and the concentration polarization. When the Ni plating rinse water 150mg/L was treated with the electrodialysis apparatus using the heterogeneous ion exchange membrane, the limiting current density was about $1.49{\;}mA/\textrm{cm}^2$. And the limiting current density increased with the flow rate and concentration of Ni plating rinse water. We recognized that the used membrane could be reused by periodic backwashing because efficiency was constant when the membrane was backwashed after treating wastewater.

• Tribology and Lubricants
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• 제19권4호
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• pp.211-216
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• 2003

This paper was studied on the corrosion and corrosion-wear behavior of chromium (Cr) plating in the acidic environments. In the various pH of acidic solutions, the electrochemical polarization test and wear-corrosion test of Cr plating were carried out. And thus potential, corrosion current density and corrosion-wear loss behaviour of Cr plating are investigated.

• 한국표면공학회지
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• 제36권4호
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• pp.324-328
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• 2003

This study was made on the crevice corrosion behavior of chromium plating in fresh water. Under the various crevice, the electrochemical polarization test of chromium plating was carried out. Results are discussed In terms of corrosion potential, polarization resistance, corrosion current density and cathodic control of chromium plating.

• 한국표면공학회지
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• 제53권6호
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• pp.312-321
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• 2020

Morphology of porous cobalt electro-deposits was systematically investigated as functions of cobalt precursors in the plating bath and applied cathodic current density with a special focus on cobalt nano-rod formation. It was proved that the concentration of cobalt precursor plays little effect on the morphology of cobalt electro-deposits at relatively low plating current density while it significantly affects the morphology with increasing plating current density. Such a dependence was discussed in terms of the kinetics of two competitive reactions of cobalt reduction and hydrogen evolution. Cobalt nano-rod structure was created at specific ranges of cobalt precursor content and applied cathodic current density, and its diameter and length varied with plating time without notable formation of side branches which is usually found during dendrite formation. Specifically, the nano-rod length was preferentially increased in relative short plating time (<15 s), resulting in higher aspect ratio of nano-rod with plating time. Whereas, both the nano-rod length and diameter were increased nearly at the same level in a prolonged plating time, making the aspect ratio unchanged. From the analysis of crystal structure, it was confirmed that the cobalt nano-rod preferentially grew in the form of single crystal on a dense poly-crystalline cobalt thin film initially formed on the substrate.

• 한국표면공학회지
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• 제50권3호
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• pp.155-163
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• 2017

In this study, the effects of the concentration of metal ions and the applied current density in the Sn-Ag plating solutions were examined in regards to the resulting composition and morphology of the solder bumps' surface. Furthermore the effect of any impurities present in the methanesulfonic acid used as a base acid in the Sn-Ag solder plating solution on the stability of plating solution as well as the characteristics of the Sn-Ag alloys films was also explored. As expected, the uniform bump was obtained by means of removing impurities in the plating solution. Consequently the resultant solder bump was obtained in an optimal current density of the range of $1A/dm^2$ to $15A/dm^2$, which has acceptable bump shape and surface roughness with 12inch wafer trial results.