• 한국레이저가공학회지
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• 제6권3호
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• pp.37-45
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• 2003

Pulsed laser ablation is important in a variety of engineering applications involving precise removal of materials in laser micromachining and laser treatment of bio-materials. Particularly, detailed numerical simulation of complex laser ablation phenomena in air, taking the interaction between ablation plume and air into account, is required for many practical applications. In this paper, high-power pulsed laser ablation under atmospheric pressure is studied with emphasis on the vaporization model, especially recondensation ratio over the Knudsen layer. Furthermore, parametric studies are carried out to analyze the effect of laser fluence and background pressure on surface ablation and the dynamics of ablation plume. In the numerical calculation, the temperature, pressure, density, and vaporization flux on a solid substrate are obtained by a heat-transfer computation code based on the enthalpy method. The plume dynamics is calculated considering the effect of mass diffusion into the ambient air and plasma shielding. To verify the computation results, experiments for measuring the propagation of a laser induced shock wave are conducted as well.

• 열처리공학회지
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• 제14권3호
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• pp.151-154
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• 2001

$TiO_2$ thin film has wide application because of its high capacitanca, reflection, and good transmissivity in visible range. $TiO_2$ thin film can be made by thermal deposition method, reactive evaporation method, activated reactive evaporation(ARE) method. In the case of thermal deposition, the oxygen deficiency can occur because the melting point of Ti is very high. While in the case of reactive evaporation, high density $TiO_2$ can not be made, because reactive gas($O_2$) and evaporated material(Ti) are not fully combined, activated reactive evaporation, $TiO_2$ is easily deposited at lower gas pressure compared with reactive evaporation because the ionized reactive gas is made by plasma. Therefore, activated reactive evaporation is very useful to deposit the material having the high melting point. In this work, we formed $TiO_2$ thin film by activated reactive evaporation method. The surface of $TiO_2$ thin film was analyzed by X-ray photoelectron spectroscopy. The surface morphology which was analyzed by atomic force microscopy(AFM) shows that feature of the film surface is uniform. The dielectric capacitance, withstanding voltage were $600{\mu}F/cm^2$, 0.4V respectively. In further work, we can increase the withstanding voltage by improving the deposition parameter of substrates.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1098-1102
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• 2008

To increase the ink transfer rate in the micro-gravure-offset printing, the liquid transfer process between two separating plates is investigated. During the liquid transfer process, in which one plate is fixed and the other one moves vertically, a sessile droplet is separated into two droplets. The volume ratio of the two droplets depends on the contact angles of the two plates. In a numerical study of the ink transfer processes, liquid transfer between two parallel separating plates and between a trapezoidal cavity and an upward moving plate are simulated, as models of the printing of ink from the offset pad onto the substrate and the picking up of ink from the gravure plate by the offset pad, respectively. Also, in experimental study, to obtain various surface contact angles, chemical treatment, plasma treatment, and electrowetting- on-dielectric (EWOD) surface are considered. The transfer rate between two plates is calculated by analyzing the droplet images. From the results, the optimal surface contact angles of the units of the micro-gravure-offset printing can be characterized.

• 한국표면공학회지
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• 제53권5호
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• pp.201-206
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• 2020

A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO₂-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was used for stabilizing APDBD. Oxygen permeability was evaluated by forming an oxidized SiOxCy(-H) thin film on a PET film. When the single-layer oxidized SiOxCy(-H) film was coated on the PET, the oxygen gas permeability decreased by 46% compared with bare PET. In case of three-layer oxidized SiOxCy(-H) film, the oxygen gas permeability decreased by 73%. The oxygen permeability was affected by the thickness of the SiO₂-like layer formed by oxidation treatment rather than the thickness of the SiOxCy(-H) film. The excellent corrosion resistance was demonstrated by coating an oxidized SiOxCy(-H) thin film on the silver-coated aluminum PCB for light emitting diode (LED).

• 접착 및 계면
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• 제20권2호
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• pp.66-70
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• 2019

소수성 폴리프로필렌 섬유의 표면을 상압 플라즈마 공정을 이용하여 표면처리하였다. 친수성으로 개질된 섬유를 수용성 폴리비닐프롤리돈 (poly(N-vinylpyrrolidone, PVP) 코팅액에 딥코팅하여 PVP 막을 형성하였다. 섬유 표면에 코팅된 PVP 막은 15 kGy 선량의 전자 빔 조사를 통해 가교되어, 폴리프로필렌 섬유의 표면이 PVP 하이드로젤로 균일하게 코팅된 것을 확인하였다. PVP 하이드로젤 코팅막의 두께는 코팅액의 농도를 조절하여 제어할 수 있었다. 단계적인 표면처리, PVP 코팅, 그리고 하이드로젤 막의 형성에 따른 특성은 접촉각, 전자현미경, 광학현미경 등을 통해 분석되었다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.63-66
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• 1999

We fabricated ramp-edge Josephson junctions with barriers formed by interface treatments instead of epitaxially grown barrier layers. Low-dielectric Sr$_2AITaO_6$(SAT) layer was used as an ion-milling mask as well as an insulating layer for the ramp-edge junctions. An ion-milled YBa$_2Cu_3O_{7-x}$ (YBCO)-edge surface was not exposed to solvent through all fabrication procedures. The barriers were produced by structural modification at the bottom YBCO edge using plasma treatment prior to deposition of the top YBCO electrode. We investigated the effects of pre-annealing and post-annealing on the characteristics of the interface-treated Josephson junctions. The junction parameters were improved by using in-situ RF plasma cleaning treatment.

• 폴리머
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• 제26권6호
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• pp.778-784
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• 2002

덱스트란 용액으로 필름을 제조하여 여러 가지 특성들을 살펴보았으며, 가소제 및 가교제를 첨가하거나 저온 플라스마로 표면을 처리함으로써 이러한 특성들을 향상시킬 수 있는 지를 살펴보았다. 덱스트란 필름은 기계적 강도는 우수하였으나 부스러지기 쉽고 수분에 대단히 약한 특성을 보였다 가소제를 첨가할 경우에는 유연성이 크게 개선되는 대신에 기계적 강도가 크게 약화되었다. 하지만, 가소제를 첨가한 다음 가교제로 가교시키거나 함께 첨가할 경우에는 비교적 우수한 기계적 강도와 함께 유연성을 지닌 필름이 제조되었으며, 수분에 대한 저항성도 향상되었다. 또한, 아세틸렌 플라스마로 처리할 경우 필름 자체의 특성은 크게 변하지 않으나 친수성인 표면이 소수성으로 바뀌었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.386-387
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• 2007

ICP-CVD(Inductively Coupled Plasma-Chemical Vapor Deposition)를 이용하여 플라즈마 처리에 따른 Al이 도핑된 ZnO(AZO) 박막의 표면 부착력과 굴절율, 표면거칠기에 관한 연구를 하였다. 플라즈마 처리는 인가전압, 시간을 변수로 하였고 반응 가스는 Ar을 사용하였다. 표면조성은 AFM, 광학적 특성은 UV-Vis 분광계를 이용한 광투과도 측정으로부터 굴절률과 밴드갭을 조사하였고 표면 부착력은 접촉각 분석기(제조사:Kruss)를 사용하여 조사하였다. 플라즈마 처리 시간이 길어짐에 따라 박막 표면의 거칠기가 커지고 부착력은 증가하는 것으로 나타났다.

• 한국전기전자재료학회논문지
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• 제24권1호
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• pp.12-16
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• 2011

In this study, we fabricated the flexible pentacene TFTs with the polymer gate dielectric and contact printing method by using the silver nano particle ink as a source/drain material on plastic substrate. In this experiment, to lower the cross-linking temperature of the PVP gate dielectric, UV-Ozone treatment has been used and the process temperature is lowered to $90^{\circ}C$ and the surface is optimized by various treatment to improve device characteristics. We tried various surface treatments; $O_2$ Plasma, hexamethyl-disilazane (HMDS) and octadecyltrichlorosilane (OTS) treatment methods of gate dielectric/semiconductor interface, which reduces trap states such as -OH group and grain boundary in order to improve the OTFTs properties. The optimized OTFT shows the device performance with field effect mobility, on/off current ratio, and the sub-threshold slope were extracted as $0.63cm^2 V^{-1}s^{-1}$, $1.7{\times}10^{-6}$, and of 0.75 V/decade, respectively.

• Journal of Welding and Joining
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• 제29권1호
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• pp.99-106
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• 2011

Joint strength between a solder ball and a pad on a substrate is one of the major factors which have effects on electronic device reliability. The effort to improve solder joint strength via surface cleaning, heat treatment and solder composition change have been in progress. This paper will discuss the method of solder ball joint strength improvement using LF hydrogen radical cleaning treatment and focus on the effects of surface treatment condition on the solder ball shear strength and interfacial reactions. In the joint without radical cleaning, voids were observed at the interface. However, the specimens cleaned by hydrogen-radical didn't have voids at the interface regardless of cleaning time. The shear strength between the solder ball and the pad was increased over 120%(about 800gf) when compared to that without the radical treatment (680gf) under the same reflow condition. Especially, at the specimen treated for 5minutes, ball shear strength was considerably increased over 150%(1150gf). Through the observation of fracture surface and cross-section microstructure, the increase of joint strength resulted from the change of fracture mode, that is, from the solder ball fracture to IMC/Ni(P) interfacial fracture. The other cases like radical treated specimen for 1, 3, 7, 9min. showed IMC/solder interfacial fracture rather than fracture in the solder ball.