Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Anti-corrosion Properties of SiOxCy(-H) thin Films Synthesized and Oxidized by Atmospheric Pressure Dielectric Barrier Discharge

대기압 유전체배리어방전으로 합성 및 산화 처리된 SiOxCy(-H) 박막의 부식방지 특성

  • Kim, Gi-Taek (Department of Materials and Manufacturing Engineering, Hanbat National University) ;
  • Kim, Yoon Kee (Department of Materials and Manufacturing Engineering, Hanbat National University)
  • 김기택 (한밭대학교 신소재공학과) ;
  • 김윤기 (한밭대학교 신소재공학과)
  • Received : 2020.10.16
  • Accepted : 2020.10.28
  • Published : 2020.10.31
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Abstract

A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO2-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was used for stabilizing APDBD. Oxygen permeability was evaluated by forming an oxidized SiOxCy(-H) thin film on a PET film. When the single-layer oxidized SiOxCy(-H) film was coated on the PET, the oxygen gas permeability decreased by 46% compared with bare PET. In case of three-layer oxidized SiOxCy(-H) film, the oxygen gas permeability decreased by 73%. The oxygen permeability was affected by the thickness of the SiO2-like layer formed by oxidation treatment rather than the thickness of the SiOxCy(-H) film. The excellent corrosion resistance was demonstrated by coating an oxidized SiOxCy(-H) thin film on the silver-coated aluminum PCB for light emitting diode (LED).

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References

  1. A. S. da Silva Sobrinho, N. Schuehler, J. E. Klemberg-Sapieha, and M. R. Wertheimer, et al., Plasma-deposited silicon oxide and silicon nitride films on poly (ethylene terephthalate): a multitechnique study of the interphase regions, J. Vac. Sci. Technol. A16 (1998) 2021-2030.
  2. M. Bose, D. N. Bose, D. K. Basa, Plasma enhanced growth, composition and refractive index ofsilicon oxynitride films, Mater. Lett., 52 (2002) 417-422. https://doi.org/10.1016/S0167-577X(01)00436-0
  3. A. N. R. da Silva, N. I. Morimoto, O. Bonnaud, Tetraethylorthosilicate $SiO_2$ films deposited at a low temperature, Microelectron. Reliab. 40 (2000) 621-624. https://doi.org/10.1016/S0026-2714(99)00296-6
  4. D. S. Wuu, W. C. Lo, L. S. Chang, R. H. Horng, Properties of SiO2-like barrier layers on polyethersulfone substrates by low-temperature plasma-enhanced chemical vapor deposition, Thin Solid Films 468 (2004) 105-108. https://doi.org/10.1016/j.tsf.2004.04.031
  5. R. Foest, F. Adler, F. Sigeneger, M. Schmidt, Study of an atmospheric pressure glow discharge (APG) for thin film deposition, Surf. Coat. Technol. 163-164 (2003) 323-330. https://doi.org/10.1016/S0257-8972(02)00487-5
  6. Y. Sada, et al., Synthesis of plasma-polymerized tetraethoxysilane and hexamethyldisiloxane films prepared by atmospheric pressure glow discharge, Appl. Phys. D 28 p (1995) 1661-1669. https://doi.org/10.1088/0022-3727/28/8/015
  7. S. Martin, F. Massines, N. Gherardi, C. Jimenez, Atmospheric pressure PE-CVD of silicon based coatings using a glow dielectric barrier discharge, Surface and Coatings Tech. 177-178 (2004) 693-698. https://doi.org/10.1016/j.surfcoat.2003.08.008
  8. Y. K. Kim, G. T. Kim, Oxygen Plasma Treatment of $SiO_xC_y$(-H)Films polymerized by Atmospheric Pressure Dielectric Barrier Discharge using Hexamethylcyclrotrisiloxane, Thin Solid Films 519 (2011) 6750-6754. https://doi.org/10.1016/j.tsf.2011.01.206
  9. Alfred Grill, Cold Plasma in Materials Fabrication, IEEE press Inc., New York, (1989)
  10. J. G. Kim, Y. K. Kim, Optical Emission Characteristics of Atmospheric Pressure Dielectric Barrier Discharge, Korean J. Mater. Res 25 (2015) 100-106. https://doi.org/10.3740/MRSK.2015.25.2.100