• Journal of the Korean Society for Precision Engineering
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• v.13 no.3
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• pp.70-79
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• 1996

In off-line process optimization, process parameters are controlled such that the process is robust against changes in equipment conditions and incoming materials. The off-line methods, however, are not effective when the changes are so large that process parameters need to be adjusted. On-line control can respond to such large changes, but process uniformity has not been controlled on-line due to the difficulties in modeling. This paper is aimed at developing a new on-line control methodology where the uniformity is controlled effectively. The process variability is categorized based on the physical considerations, and the process parameters are classi- fied considering their effects on the categorized process variabilities. On-line control is performed with the properly selected process parameters so that robustness may not be degraded. The developed methodology is applied to the single wafer plasma etching processes, which resulted in both higher within-a-wafer uniformity and compens- ation of the incoming material non-uniformity.

• Korean Chemical Engineering Research
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• v.44 no.6
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• pp.588-596
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• 2006

The surface of polystyrene membrane treated by Ar, $O_2$ plasma, and the effects were observed before and after the treatment and permeability of $CO_2$, $N_2$ and selectivity of $CO_2$ relative to $N_2$ was measured using continuous flow gas permeation analyzer (GPA). The mole ratio of O over C in the surface was increased from 0 to 0.179 with Ar plasma treatment and route mean square of surface was increased from $15.86{\AA}$ to $71.64{\AA}$. Therefore the contact angle was decreased from $89.16^{\circ}$ to $18.1^{\circ}$. Thus Plasma treatments made surface of membrane tend to be highly hydrophilic. The optimum condition for the $CO_2$ permeability and ideal selectivity of the plasma treated membrane was as follows: the measurement of Ar (60 W, 2 min, $70^{\circ}C$) plasma treatment was $1.14{\times}10^{-12}[m^3(STP){\cdot}m/m^2{\cdot}sec{\cdot}atm]$ and 4.22. In the case of $O_2$ plasma treatment, the contact angle was decreased at $13.56^{\circ}$ with increase of O/C ratio ($0.189{\AA}$) and route mean square of surface ($57.10{\AA}$). The optimum condition for the $CO_2$ permeability and ideal selectivity of the plasma treated membrane was as follows: the measurement of $O_2$ (90 W, 2 min, $70^{\circ}C$) plasma treatment was $7.1{\times}10^{-12}[m^3(STP){\cdot}m/m^2{\cdot}sec{\cdot}atm]$ and 11.5. After plasma treatment, the changes of membrane surface were all subtly linked with both cross-linking and etching effects. Finally, it was confirmed that the gas permeation capacity and selectivity of the modified membrane with plasma could be improved by an appropriate control of the plasma conditions such as treatment time, the power input and sort of plasma gas.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.327-335
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• 1993

Using a RF cylindrical magnetron operated with two electromagnets having a Helmholz configuration, RF magnetron plasma properties and characteristics of reactive ion ething of Si were investigated as a function of applied magnetic field strengths using 3mTorr $CF_4/H_2$ and $CHF_3$. Also, I-V characteristics of Schottky diodes, which were made of silicons etched under different applied magnetic field strengths and gas environments, were measured to investigate the degree of radiation damage during the reactive ion etching. As the magnetic field strent;th increased, ion densities and radical densities of the plasmas were increased linearly, however, the dc self-bias voltages induced on the powered electrode, where the specimen are located, were decreased exponentially. Maximum etch rates, which were 5 times faster than that etched without applied magnetic filed, were obtained using near lOOGauss, and, under these conditions, little or no radiation damages on the etched silicons were found.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• Journal of Institute of Control, Robotics and Systems
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• v.21 no.9
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• pp.875-880
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• 2015

Traditional semiconductor process control has been performed through statistical process control techniques in a constant process-recipe conditions. However, the complexity of the interior of the etching apparatus plasma physics, quantitative modeling of process conditions due to the many difficult features constraints apply simple SISO control scheme. The introduction of the Advanced Process Control (APC) as a way to overcome the limits has been using the APC process control methodology run-to-run, wafer-to-wafer, or the yield of the semiconductor manufacturing process to the real-time process control, performance, it is possible to improve production. In addition, it is possible to establish a hierarchical structure of the process control made by the process control unit and associated algorithms and etching apparatus, the process unit, the overall process. In this study, the research focused on the methodology and monitoring improvements in performance needed to consider the process management of future developments in the semiconductor manufacturing process in accordance with the age of the APC analysis in real applications of the semiconductor manufacturing process and process fault diagnosis and control techniques in progress.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.250-251
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• 2009

For the fabrication of a multilevel resist (MLR) based on a very thin amorphous carbon (a-C) layer an $Si_{3}N_{4}$ hard-mask layer, the selective etching of the $Si_{3}N_{4}$ layer using physical-vapor-deposited (PVD) a-C mask was investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in $CH_{2}F_{2}/H_{2}/Ar$ plasmas : HF/LF powr ratio ($P_{HF}/P_{LF}$), and $CH_{2}F_{2}$ and $H_2$ flow rates. It was found that infinitely high etch selectivities of the $Si_{3}N_{4}$ layers to the PVD a-C on both the blanket and patterned wafers could be obtained for certain gas flow conditions. The $H_2$ and $CH_{2}F_{2}$ flow ratio was found to play a critical role in determining the process window for infinite $Si_{3}N_{4}$/PVDa-C etch selectivity, due to the change in the degree of polymerization. Etching of ArF PR/BARC/$SiO_x$/PVDa-C/$Si_{3}N_{4}$ MLR structure supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the $Si_{3}N_{4}$ layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.617-620
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• 1999

In this study, the polarization e(fecal and the birefringence effect of amorphous germanium (a-Ge) thin films were investigated by using linearly polarized He-Ne laser beam. The a-7e thin films were deposited on the quarts substrate by plasma enhanced chemical vapor deposition (PECVD) and thermal vacuum evaporation In order to obtain the optimum grating arrays, inorganci resists such as Si$_3$N$_4$ and a-Se$_{75}$ Ge$_{25}$ , were prepared with the optimized thickness by Monte Carlo (MC) simulation. As the results of MC simulation, the thickness ofa-Se$_{75}$ Ge$_{25}$ resist was determined with Z$_{min}$ of 360$\AA$ . The resists were exposed to Ga$^{+}$-FIB with accelerating energies of 50 keV, developed by wet etching, and a-Ge thin film was etched by reactive ion-etching (RIE). Finally, we were obtained grating arrays which grating width and linewidth are 0.8${\mu}{\textrm}{m}$, respectively and we studied the polarization and birefringence effect in transmission grating array made of high refractive amorphous material, and the applicability as waveplates and polarizers in optical device.e.e.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.39.1-39.1
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• 2009

본 실험은 연성과 광 투명도가 뛰어난 아크릴 (PMMA) 과 폴리카보네이트 (Polycabonate) 기판의 축전 결합형 플라즈마 (CCP) 건식 식각 연구에 관한 것이다. 특히 식각 반응기 내부의 압력 변화에 따른 두 기판의 건식 식각 특성 분석에 초점을 맞추었다. 실험에 사용된 기판은 두께 1mm의 아크릴 (PMMA) 과 폴리카보네이트 (Polycabonate)를 $1.5\times1.5\;cm^2$로 절단하여 Photo-lithography 공정을 통하여 감광제 (Photo-resist)로 패턴하였다. 식각 반응기 내부에 패턴 된 아크릴(PMMA) 과 폴리카보네이트 (Polycabonate)를 넣은 후 반응기 내부 진공 상태로 만들었다. 그 후 5 sccm $O_2$ 가스를 유량조절기 (Mass flow controller)를 통하여 식각 반응기 내부로 유입하여 실험을 하였다. 이때 식각 공정 변수는 식각 반응기 내부 압력과 샘플 척 파워이다. 특성평가 항목은 식각 후 기판 (Substrate)의 식각율 (Etch rate), 식각 선택비 (Selectivity) 그리고 기판 표면 거칠기 (RMS roughness)이다. 실험 결과는 표면 단차 분석기(Surface profiler)를 이용하여 기판 (Substrate)의 표면을 분석 하였다. 또한 OES (Optical Emission Spectroscopy) 를 이용하여 식각 중 내부 플라즈마의 상태를 분석하였다. 본 실험 결과에 따르면 5 sccm $O_2$ 가스와 100 W 척 파워를 고정한 후 반응기 내부의 압력을 25 mTorr에서 180 mTorr까지 변화시켜 실험한 결과 40 mTorr의 반응기 내부 압력에서 실험 자료 중 가장 높은 식각율로 아크릴 (PMMA)은 $0.46\;{\mu}m/min$, 폴리카보네이트 (Polycabonate)는 $0.28\;{\mu}m/min$의 결과를 얻었다. 또한 이 자료를 바탕으로 5 sccm $O_2$ 가스와 반응기 내부 압력을 40 mTorr로 고정시키고 RIE 척 파워를 25 W에서 150 W로 증가시켰을 때 아크릴 (PMMA)의 식각율은 $0.15\;{\mu}m/min$에서 $0.72\;{\mu}m/min$까지 증가하였고, 폴리카보네이트 (Polycabonate) 의 식각율은 $0.1\;{\mu}m/min$에서 $0.36\;{\mu}m/min$까지 증가하였다.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.155-160
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• 1998

It is necessary to use Arc layer and DUV resist to define 0.25 $\mu \textrm{m}$ line and space for 256 MDRAM devices. Poly-Si etching with Arc layer and different resists has been performed in a TCP-9408 etcher with variation of gas chemistries; $Cl_2/O_2, Cl_2/N_2, Cl_2$/HBr . DUV resist causes more positive etch profile and CD gain compared to I-line resist because the sidewall passivation is more stimulated by increasing polymerization through the loss of resist. When Arc layer is applied, CD hain also increases due to the polymeric mask formed after thching Arc layer. From the point of gas chemistry effects, the etch profile and CD gain is not improved using $Cl_2/O_2$ gas, since polymerization is accelerated in this gas. however, the vertical profile and less CD gain is obtained using $Cl_2$/HBr gas. Furthermore, HBr gas is very effective to suppress the difference of profile and CD variation between dense pattern and isolated pattern by minimizing non-uniformity of side wall passivation with pattern density.

• Applied Chemistry for Engineering
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• v.16 no.6
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• pp.853-856
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• 2005

Inductively coupled plasma reactive ion etching of magnetic tunnel junction (MTJ) stack, which is one of the key elements in magnetic random access memory, was studied. The MTJ stacks were patterned in nanometer size by electron(e)-beam lithography, and TiN thin films were employed as a hard mask. The etch process of TiN hard mask was examined using Ar, $Cl_2/Ar$, and $SF_6/Ar$. The TiN hard mask patterned by e-beam lithography was first etched and then the etching of MTJ stack was performed. The MTJ stacks were etched using Ar, $Cl_2/Ar$, and $BCl_3/Ar$ gases by varying gas concentration and pressure.