• Title/Summary/Keyword: PLASMA ETCHING

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Patterning of Pt thin films using SiO$_2$mask in a high density plasma (고밀도 플라즈마에서 규소산화막을 마스크로 이용한 백금박막의 페터닝)

  • 이희섭;이종근;박세근;정양희
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.3
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    • pp.87-92
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    • 1997
  • Inductively coupled Cl$_{2}$ plasma has been studied to etch Pt thin films, which hardly form volatile compound with any reactive gas at normal process temperature. Low etch rate and residue problems are frequently observed. For higher etch rate, high density plasma and higher process temperature is adopted observed. For higher etch rate, high density plasma and higher process temperature is adopted and thus SiO$_{2}$ is used as for patterning mask instead of photoresist. The effect of O$_{2}$ or Ar addition to Cl$_{2}$ was investigated, and the chamber pressure, gas flow rate, surce RF power and bias RF power are also varied to check their effects on etch rate and selectivity. The major etching mechanism is the physical sputtering, but the ion assisted chemical raction is also found to be a big factor. The proposs can be optimized to obtain the etch rate of Pt up to 200nm/min and selectivity to SiO$_{2}$ at 2.0 or more. Patterning of submicron Pt lines are successfully demonstrated.

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The Characteristics of Plasma Polymerized Carbon Hardmask Film Prepared by Plasma Deposition Systems with the Variation of Temperature

  • Yang, J.;Ban, W.;Kim, S.;Kim, J.;Park, K.;Hur, G.;Jung, D.;Lee, J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.381.1-381.1
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    • 2014
  • In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).

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PARAMETER STUDY ON PLASMA-POLYMERIZATION OF LANTHANIDE DIPHTHALOCYANINE FILMS FOR ELECTROCHEMICAL DEVICES

  • Kashiwazaki, Naoya;Yamana, Masao
    • Journal of Surface Science and Engineering
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    • v.29 no.6
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    • pp.739-744
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    • 1996
  • Lanthanide diphthalocyanines have interesting properties on electrochemical and chemical redox reactions. It is however, difficult to use because of thier short device life. Plasma-polymerization attends to improvement thier device life. Yb-diphthalocyanine ($YbPc_2$) polymer film was deposited in a parallel plate electrodes-type RF plasma reactor. $YbPc_2$ was sublimed into the argon plasma, and polymer film was obtained on a substrate. Radio frequency was constant of 13.56MHz. Pressure of argon gas, sublimation rate of $YbPc_2$ and RF power were variable parameters depending on film quality. Surface of polymer films include a lot of sub-micron order lumps. It was indicated that size of lumps depends on polymerization degree controled by parameters. Size of lumps and polymerization degree are increased with RF power. However, by the high RF power over 40W, polymerization degree is decreased with RF power and surface of film is rough. In condition of RF power is high, polymerization will compete with etching of film. We obtained good films for electrochromic display with RF power of 20W, argon gas pressure of 8.0 Pa and sublimationrate of $1.2 \times 10$ mol/min, and good films for gas sensor with RF power of 30W, argon gas pressure of 10.6Pa and sublimation rate of $1.2 \times 10$ mol/min.

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Diagnostics of Magnetron Sputtering Plasmas: Distributions of Density and Velocity of Sputtered Metal Atoms

  • Sasaki, Koichi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.98-99
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    • 2012
  • Deposition of thin films using magnetron sputtering plasmas is a well-developed, classical technology. However, detailed investigations using advanced diagnostics are insufficient in magnetron sputtering, in comparison with plasma-aided dry etching and plasma-enhanced chemical vapor deposition. In this talk, we will show examples of diagnostic works on magnetron sputtering employing metal targets. Diagnostic methods which have fine spatial resolutions are suitable for magnetron sputtering plasmas since they have significant spatial distributions. We are using two-dimensional laser-induced fluorescence spectroscopy, in which the plasma space is illuminated by a tunable laser beam with a planer shape. A charge-coupled device camera with a gated image intensifier is used for taking the picture of the image of laser-induced fluorescence formed on the planer laser beam. The picture of laser-induced fluorescence directly represents the two-dimensional distribution of the atom density probed by the tunable laser beam, when an intense laser with a relatively wide line-width is used. When a weak laser beam with a relatively narrow linewidth is used, the laser-induced fluorescence represents the density distribution of atoms which feel the laser wavelength to be resonant via the Doppler shift corresponding to their velocities. In this case, we can obtain the velocity distribution function of atoms by scanning the wavelength of the laser beam around the line center.

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Etchless Fabrication of Cu Circuits Using Wettability Modification and Electroless Plating (젖음성 차이와 무전해도금을 이용한 연성 구리 회로패턴 형성)

  • Park, Sang-Jin;Ko, Tae-Jun;Yoon, Juil;Moon, Myoung-Woon;Han, Jun Hyun
    • Korean Journal of Materials Research
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    • v.25 no.11
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    • pp.622-629
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    • 2015
  • Cu circuits were successfully fabricated on flexible PET(polyethylene terephthalate) substrates using wettability difference and electroless plating without an etching process. The wettability of Cu plating solution on PET was controlled by oxygen plasma treatment and $SiO_x$-DLC(silicon oxide containing diamond like carbon) coating by HMDSO(hexamethyldisiloxane) plasma. With an increase of the height of the nanostructures on the PET surface with the oxygen plasma treatment time, the wettability difference between the hydrophilicity and hydrophobicity increased, which allowed the etchless formation of a Cu pattern with high peel strength by selective Cu plating. When the height of the nanostructure was more than 1400 nm (60 min oxygen plasma treatment), the reduction of the critical impalement pressure with the decreasing density of the nanostructure caused the precipitation of copper in the hydrophobic region.

Large Area Plasma for LCD Processing by Individyally Controlled Array Sources

  • Kim, Bong-Joo;Kim, Chin-Woo;Park, Se-Geun;Lee, Jong-Geun;Lee, Seung-Ul;Lee, Il-Hang;O, Beom-Hoan
    • Journal of Information Display
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    • v.3 no.2
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    • pp.26-30
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    • 2002
  • Large area plasma source has been built for LCD etcher by an array of $2{\times}2$ ICP sources. Since only one RF power supply and one impedance matching network is used in this configuration, any difference in impedances of unit RF antennas causes unbalanced power delivery to the unit ICP. In order to solve this unavoidable unbalance, unit antenna is designed to have a movable tap, with which the inductance of each unit can be adjusted individually. The plasma density becomes symmetric and etch rate becomes more uniform with the impedance adjustment. The concept of adding axial time-varying magnetic field to the single ICP source is applied to the array ICP source, and is found to be effective in terms of etch rate and uniformity.

Study on the surface characteristics of parylene-C films in inductively coupled $O_2/CF_4$ gas plasma

  • Ham, Yong-Hyun;Baek, Kyu-Ha;Park, Kun-Sik;Shin, Hong-Sik;Yun, Ho-Jin;Kwon, Kwang-Ho;Do, Lee-Mi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1399-1401
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    • 2009
  • In this article, we reported the results of etching polymonochloro-para-xylylene (parylene-C) thin films using inductively coupled plasma and $CF_4/O_2$ gas mixture. The $CF_4$ gas fraction increased up to the approximately 16 %, the polymer etch rate increased in the range of 277 - 373 nm/min. It confirmed that the etch rate of the parylene-C mainly depended on the O radical density in the plasma. Using a contact angle measurement, the contact angle increased with increasing the $CF_4$ fraction. Moreover, the contact angle was highly related a $CF_x$ functional group on parylene films.

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Analysis on DC Glow Discharge Properties of Ar Gas at the Atmosphere Pressure (대기압 Ar 가스의 직류 글로우 방전 특성분석)

  • So, Soon-Youl
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.59 no.4
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    • pp.417-422
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    • 2010
  • Atmosphere Plasma of Gas Discharge (APGD) has been used in plasma sources for material processing such as etching, deposition, surface modification and so on due to having no thermal damages. The APGD researches on AC source with high frequency have been mainly processed. However, DC APGD studies have been not. In order to understand APGD further, it is necessary to study on fundamental properties of DC APGD. In this paper, we developed a one-dimensional fluid simulation model with capacitively coupled plasma chamber at the atmosphere pressure (760 [Torr]). Nine kinds of Ar discharge particles such as electron (e), positive ions ($Ar^+$, $Ar_2^+$) and neutral particles ($Ar_m^*$, $Ar_r^*$, $Ar_h^*$, $Ar_2^*$(1), $Ar_2^*$(3) and Ar gas) are considered in the computation. The simulation was worked at the current range of 1~15 [mA]. The characteristics of voltage-current were calculated and the structure of Joule heating were discussed. The spatial distributions of Ar DC APGD and the mechanism of power consumption were also investigated.

The Graft Polymerization of Acrylic Acid in Vapour Phase onto Poly(ethylene terephthalate) by Cold Plasma Part (I) (저온 Plasma를 이용한 Poly(ethylene terephthalate)에의 Acrylic Acid의 기상 Graft 공중합 반응(I))

  • 천태일;최석철;모상영
    • Textile Coloration and Finishing
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    • v.1 no.1
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    • pp.7-18
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    • 1989
  • The distinguishing characteristic of the glow discharge is that chemical reaction induced by partially ionized gases are limited only to the substrate surface. Most studies have been done on the plasma etching and polymerization. The graft polymerization in vapour phase by cold plasma has been rarely investigated. In this study the system of tub3ar reaction chamber with capacitively coupled electrode of alternative current of 60 Hz was employed for the graft polymerization. The graft polymerization of Acylic Acid(AA) onto the poly (ethylene terephthalate) (PET) was carried out by treatment of PET film and fabric by cold plasma (glow discharge of argon gas), followed by the supply of AA vapour. The graft yield was about 1 wt%. The surface property was determined by contact angle, the surface tension was evaluated by zisman’s plot and equation of surface tension mesurement. The results were as follows: 1. In order to obtain lower contact angle, it was effective to avoid the vicinity of electrodes for a setting position of substrate. 2. Contact angle affected on the monomer pressure and its duration of exposure to the acid vapour. 3. Polymer radical formation was influenced by the changes of the value of current density and plasma treatment time. 4. Total surface tension of plasma grafted PET film increased. With an increase in the carboxylic acid content, the dispersion force decreased, while, the polar force and hydrogen bonding force increased. 5. The contact angle decreased from $75^\circ$ to around $30^\circ$ by plasma grafting. There was no ageing effect on the contact angle after 4 months.

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Effects of the One side Hydrophilicity for Nylon/PU Water Repellent Blended Fabric Treated with Low Temperature Plasma Treatment (저온 플라즈마 처리한 Nylon/PU 혼방발수직물의 편면친수효과)

  • Ma, Jae Hyuk;Son, Kyoung Tai;Koo, Kang
    • Fashion & Textile Research Journal
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    • v.15 no.3
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    • pp.461-466
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    • 2013
  • Synthetic fiber materials were developed due the desire of consumers for high-quality, high-performance and comfort. A high functionality of synthetic fiber can be obtained through surface treatment that can improve hydrophilic properties, color depth after dyeing and adhesion properties. These advantages create added-value. Hydrophobic properties are an important feature to create added-value (such as hydrophilic properties). One side processing is a method of imparting to contrary function on the front and rear side. In this study, fluorine-coated Nylon/PU blended fabric was treated on only one side with a low-temperature plasma treatment; subsequently, the contact angles decreased by increasing the time and intensity of the plasma treatment. The contact angle of the untreated surface and the treated surface was different. It a showed a difference in the properties of both surfaces. Tensile strength and stiffness decreased by increasing the time and intensity of the plasma treatment. However, plasma treatment did not significantly change the tensile strength and stiffness on both surfaces of the fabric. SEM photographs showed the surface of fluorine-coated fabric and the etching surface by using plasma treatment on the fabric. Plasma treatment was confirmed not to affect the physical properties of the fabric.