• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.211-216
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• 2010

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.5}Al_{0.5}As$ buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A$1-{\mu}m$ thick $In_{0.5}Al_{0.5}As$ buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320^{\circ}C to $580^{\circ}C$. The MQWs consist of three $In_{0.5}Ga_{0.5}$As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick $In_{0.5}Al_{0.5}$As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range ($320-580^{\circ}C$) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range ($320-480^{\circ}C$), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of $480^{\circ}C$, while the MQWs with buffer layer grown at higher temperature from $530^{\circ}C$ to $580^{\circ}C$ showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.180-183
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• 2001

$YVO_{4}$ and Nd:$YVO_{4}$ single crystals have been grown developed Edge-defined film-fed growth (EFG) method and the crystals were measured on optical properties. $YVO_{4}$ and Nd:$YVO_{4}$ single crystal were transparent, high quality due to homogeneity of surface temperature of the melt and stability of meniscus during crystal growth. In transmittance and absorption spectra, Nd:$YVO_{4}$ single crystals had absorption peaks at wavelengths of 532, 593, 753, 808, 888 though $YVO_{4}$ single crystal had a broad transmittance at wavelength ranging from 340 to 1000nm. Also, Nd:$YVO_{4}$ single crystals had emissions of energy at range of 800~900 nm in photoluminescence (PL) spectrum.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.1
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• pp.58-67
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• 1992

Optical absorption and photoluminescences(PL) of MgGa2Se4 and MgGa2Se4 : Co2+ single crustals were guown by the Bridgman method have been investigated in the visible and near-in frared regions. The optical absorption spectrum showed three absorption peak at 760 nm(13158nm, -1, 1.63eV), 1640nm(6097cm-1, 0.75eV).and 2500nm(4000cm-1,0.49eV) which are assigned the electronic transitions between the ground state and excited states of Co2+ ions with Td sym-metry in MgGa2Se4 host lattice. In PL spectrum the visible emission bands as well as the infrared emission band in these single cuystals are obserned. The visible emission bands are explained due to the radiative transitions of electrons from quasi continusly distributed tarps below the bottom of the conduction band to acceptor levels above the top of the valence band in the proposed energy level scheme. At the same time, it is considered that the infrated emission bands are attributed to electron transitions from the deep levels to the acceptor levels. The mechanism of the optical transition os well explained in terms of the energy diagram of MgGa2Se4.

• Journal of the Korean Applied Science and Technology
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• v.33 no.1
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• pp.23-29
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• 2016

Zinc oxide of hexagonal wurzite, is known as n-type semiconductor. It has a wide band gap energy of 3.37 eV and large exciton binding energy of 60 meV. It can be widely applied to gas sensors, laser diodes, dye-sensitized solar cells and degradation of dye waste. The use of microwave hydrothermal synthesis brings a rapid reaction rate, high yield, and energy saving. Amine additives control the different particle shapes because of the chelate effect and formation of hydroxide ion. In this study, zinc nitrate hexahydrate was used as zinc precursor. In addition, ethanolamine, ethylenediamine, diethylenetriamine, and hexamethylenetetramine are used as shape control agent. The pH value was controlled as 11 by NaOH. The shapes of zinc oxide are star-like, rod, flower-like, and circular cone. In order to analyze physical, chemical, and optical properties of ZnO with diverse amine additives, we used XRD, SEM, EDS, FT-IR, UV-Vis spectroscopy, and PL spectroscopy.

• Analytical Science and Technology
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• v.20 no.5
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• pp.413-418
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• 2007

Poly(vinylpyrrolidone) stabilized cadmium sulfide (CdS) nanoparticles were loaded onto the surface of silica ($SiO_2$) nanoparticles by using ${\gamma}$-irradiation. TEM micrograph reveals the presence of ~20nm sized CdS nanoparticles on the surface of $SiO_2$ nanoparticles. XRD patterns confirm the crystalline. PL spectra of the simple PVP-stabilized CdS nanoparticle and $SiO_2$@CdS composite confirm the differences in the emission characteristics between them. Two prominent emission peaks were noted around 550 nm and 600 nm for PVP-stabilized CdS nanoparticles). The emission peaks noted for the PVP-stabilized CdS nanoparticles were found to be blue shifted for $SiO_2$@CdS composites. Besides, an additional emission peak around 450 nm was noticed for the $SiO_2$@CdS composite. The presence of CdS nanoparticles influence the emission characteristics and induce quantum confinement effect.

• Clean Technology
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• v.25 no.2
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• pp.123-128
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• 2019

$Bi_2MoO_6$ catalysts were successfully synthesized using ethylene glycol monomethyl ether (EGME), glycerol (GL), ethylene glycol (EG), and water as solvents by a conventional hydrothermal method. The synthesized catalysts were characterized by XRD, DRS, BET, SEM, and PL, and we also investigated the photocatalytic activity of these materials for the decomposition of Rhodamin B under visible light irradiation. The XRD results revealed the successful synthesis of 12-18 nm, well-crystallized ${\gamma}-Bi_2MoO_6$ crystals with an Aurivillius structure regardless of solvent. In addition, the $Bi_2MoO_6$ catalysts prepared below $140^{\circ}C$ showed an amorphous phase; however, those prepared above $160^{\circ}C$ showed well-crystallized ${\gamma}-Bi_2MoO_6$ crystals. All the catalysts have a similar absorption spectrum from the ultraviolet region up to the visible region less than 470 nm. This result suggests that all the $Bi_2MoO_6$ catalysts are potential visible-light-driven photocatalysts. The $Bi_2MoO_6$ catalysts prepared using EGME as a solvent showed the highest photocatalytic activity. In addition, the $Bi_2MoO_6$ catalysts prepared at $180^{\circ}C$ showed the highest photocatalytic activity. The PL peaks appeared at about 560 nm at all catalysts and the excitonic PL signal was proportional to the photocatalytic activity for the decomposition of Rhodamin B. This suggests that the stronger the PL intensity, the larger the amount of oxygen vacancies and defects, and the higher the photocatalytic activity.

• Proceedings of the KAIS Fall Conference
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• 2011.05b
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• pp.850-853
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• 2011

상대적으로 산출양이 많은 보석용 천연 갈색 다이아몬드는 고온고압 공정을 통해서 칼라센터를 제어하여 색향상이 가능하다. 질소가 불순물로 함유된 Type IaA 다이아몬드를 5.6GPa-30min 조건으로 압력과 처리시간을 고정하고, 이때 처리온도를 1600, 1650, 1750, $1800^{\circ}C$로 바꾸어 HPHT 처리하였다. 처리조건에 따른 다이아몬드의 물성변화 확인을 위해서 광학현미경, FTIR, 저온 PL, Micro-Raman 분석을 진행하였다. 광학현미경 확대 이미지를 통해서, $1600^{\circ}C$에서도 색향상이 가능하였으며 온도증가에 따라 색향상은 진한노랑(vivid yellow)에서 연두 노랑색(vivid greenish yellow)로 색이 변하는 경향이 있었다. 또한 $1750^{\circ}C$의 고온에서는 탄소점으로 추정되는 결함이 확인되었다. FTIR 분석결과에 의해 HPHT 처리 후에도 다이아몬드의 Type IaA로 유지됨을 알 수 있었다. 저온 PL 스펙트럼결과 처리 후 모든 시편에서 H4센터는 소멸하지만 H3 센터는 잔류함을 확인하였다. 따라서 HPHT 처리온도를 조절하여 목표하는 색으로의 향상이 가능하였고, 되도록이면 탄소점과 같은 결함을 방지할 수 있는 저온 HPHT 처리가 유리하였다.

• Korean Journal of Materials Research
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• v.7 no.8
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• pp.707-713
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• 1997

HVPE(hydride vapor phase epitaxy)법으로 (111)MgAI$_{2}$ $O_{4}$기판위에 GaN 후막을 성장하였다. GaN를 성장하기 전에 기판에 표면을 GaCI로 처리한 수 성장하였을 때 이중 X선 회절 피크의 반치폭이 710 arcsec로서 N $H_{3}$로 처리한 후 성장한 GaN에 비하여 작았으며, 무색 투명의 경면상태가 얻어\ulcorner다. 113$0^{\circ}C$의 온도에서 성장한 GaN 의 광루미네센스(PL)특성과 동일하게 나타났다. 10K의 온도에서 측정된 PL 스펙트럼은 자유여기자와 속박여기자의 재결합천이에 의한 피크들과 Mg과 관련된 도너-억셉터 쌍 사이의 재결합 및 이의 1LO, 2LO, 3LO 및 4 LO 포논복제에 의한 피크들이 나타났다. 성장된 GaN는 n형의 전도성을나타내었으며, 캐리어 이동도와 농도는 각각 21.3$\textrm{cm}^2$/V ㆍsec와 4.2 x $10^{18}$$cm^{-3}$이었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.315-319
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• 1999

Properties of both photoluminescence and long-phosphorescent for Eu, Dy-codoped $SrAl_2O_4$ powder phosphor synthesized by solid reaction method were investigated by PL instrument. Two intense peaks in the emission spectrum measured at 10 K are observed near 450 nm (2.755 eV) and 520 nm (2.384 eV) wavelength, but at 300 K the main peak of 520 nm wavelength is presented. After the removal of light excitation (360 nm), the excellent after-glow characteristic of the phosphorescence were obtained as a result of low decay tiem, although the after-glow intensities of phosphor vary exponentially with the times.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.240-244
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• 2002

The GdOBr:Ce phosphor were prepared by solid state reaction using starting chemicals of $Gd_2O_3,\;CeO_2\;and\;NH_4Br$. Under 370nm UV excitation, GdOBr:Ce phosphors showed blue emission band with a spectral range of 410∼430nm. The maximum photoluminescence(PL) emission intensity was observed at 2mol% Ce content. In order to look for feasibility of application for low voltage filed emission display, cathodoluminescence(CL) of GdOBr:Ce phosphors were measured. CL emission spectra was found to be in the range of 410∼430nm, which is the same as PL spectra. The phosphors with 1mol% Ce concentration showed the maximum CL emission intensity. For the comparison of degradation property of the prepared phosphors with commercial ones, the electron beam was applied for 10min. From the result, GdOBr:Ce could be used as a blue phosphor for FED.