• Title/Summary/Keyword: PIN photodiode

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Numerical Study on the Link Range of the IM/DD Wireless Optical Communication at 830[nm] Optical Wavelength using Galilean Optics (갈릴리안 광학계를 사용한 IM/DD 광무선통신 시스템에서 830[nm] 광파장에 대한 전송거리 제한 해석)

  • Hong, Kwon-Eui;Ko, Sung-Won;Cho, Jung-Whan
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.11
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    • pp.123-129
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    • 2011
  • In terrestrial wireless optical communication links, atmospheric effects including turbulence, absorption and scattering have significant impact on the system performance. Based on the analysis of transmission in atmospheric channel concerning 830[nm] wavelength diode laser beam, performance of free space optical (FSO) link utilizing Galilean optics as a laser beam transmitting and receving optics, PIN photodiode as a detecting device. In this paper we designed optical link equation for received optical power and we analyze the atmospheric effects on the signal to noise ratio (SNR) and bit error rate (BER) of an terrestrial FSO system. We show that the possible communication distance for BER=$10^{-9}$ in proposed adverse atmospheric conditions.

A Multi-channel CMOS Feedforward Transimpedance Amplifier Array for LADAR Systems (라이다 시스템용 멀티채널 CMOS 피드포워드 트랜스임피던스 증폭기 어레이)

  • Kim, Seung-Hoon;Park, Sung Min
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.12
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    • pp.1737-1741
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    • 2015
  • A multi-channel CMOS transimpedance amplifier(TIA) array is realized in a $0.18-{\mu}m$ CMOS technology for the applications of panoramic scan LADAR systems. Each channel consists of a PIN photodiode and a feed-forward TIA that exploits an inverter input stage followed by a feed-forward common-source amplifier so as to achieve lower noise and higher gain than a conventional voltage-mode inverter TIA. Measured results demonstrate that each channel achieves $76-dB{\Omega}$ transimpedance gain, 720-MHz bandwidth, and -20.5-dBm sensitivity for $10^{-9}$ BER. Also, a single channel dissipates the power dissipation of 30 mW from a single 1.8-V supply, and shows less than -33-dB crosstalk between adjacent channels.

Study of Radiation Mapping System for Water Contamination in Water System (방사능 수치 오염 지도 작성을 위한 방사선 계측 시스템 연구)

  • Na, Teresa W.;Kim, Han Soo;Yeon, Jei Won;Lee, Rena;Ha, Jang Ho
    • Journal of Radiation Industry
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    • v.5 no.2
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    • pp.185-189
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    • 2011
  • As nuclear industry has been developed, a various types of radiological contamination has occurred. After 9.11 terror in U.S.A., it has been concerned that terrorists' active area has been enlarged to use nuclear or radioactive substance. Recently, the most powerful earth-quake stroke, which triggered a massive tsunami in Japan and then Fukushima nuclear power plant reactor has suffered from a serious accident in history. The Fukushima reactor accident has occurred an anxiety of radiation leaks and about 170,000 people have been evacuated from the accidental area near the nuclear power plant. For these reasons, a social chaos can be occurred if radiological contamination occurs to the supply system for the drinking water. As such, the establishment of the radiation monitoring system for the city main water system is compelling for the national security. In this study, a feasibility test of radiation monitoring system which consists of unified hybrid-type radiation detectors was experimented for multi detection system by using gamma-ray imaging. The hybrid-type radiation sensors were fabricated with CsI(Tl) scintillators and photodiodes. A preamplifier and amplifier was also fabricated and assembled with the sensor in the shielding case. For the preliminary test of detection of radiological contamination in the river, multi CsI(Tl)-PIN photodiode radiation detectors and $^{137}Cs$ gamma-ray source were used. The DAQ was done by Linux based ROOT program and NI DAQ system with Labview program. The simulated contamination was assumed to be occurred at Gapcheon river in Daejeon city. Multi CsI(Tl)-PIN photodiode radiation detectors were positioned at the Gapcheon river side. Assuming that the radiological contaminations flows in the river the $^{137}Cs$ gamma-ray source has been moved and then, the contamination region was reconstructed.

A Fabrication and Characteristics of GaInAs/InP PIN Phtodiode Grown by LPE (LPE에 의한 GaInAs/InP PIN Photodiode의 제작 및 특성)

  • 박찬용;남은수;박경현;김상배;박문수;이용탁;홍창희
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.5
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    • pp.737-746
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    • 1990
  • Ga0.47In0.53As PIN photodiodes(PD) having various areas have been fabricated by liquid phase epitaxial techniques. Ternary melt has been baked out at 675\ulcorner in H2 atmosphere for 20 hours before growth, which resulted in reduction of background carrier concentration of grown epi-layer. Also, lattice mismatch has been controlled within 0.01%. The room temperature performance of 10**-4cm\ulcornerarea PIN PD at a bias voltage of -5V were` quantum efficiency(with no antireflection coating)=60% for 1.3\ulcorner light source, dark current\ulcorner5nA, and capacitance\ulcornerpE. Frequency response measurement of packaged PIN PD has shown that cut-off frequency (f-3dB) was 961MHz. This PD has shown a good eye pattern when it was incorporated in a 565Mbps optical receiver.

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Design and Fabrication of InP/InGaAs PIN Photodiode for Horizontally Integrated OEIC's (수평집적형 광전자집적회로를 위한 InP/InGaAs PIN 광다이오드의 설계 및 제작)

  • 여주천;김성준
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.4
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    • pp.38-48
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    • 1992
  • OEIC(Optoelectronic Integrated Circuit)'s can be integrated horizontally or vertically. Horizontal integration approach is, however, more immune to parasitic and more universally applicable. In this paper, a structural modeling, fabrication and characterization of PIN photodiodes which can be used in the horizontal integration are performed. For device modeling, we build a transmission line model from 2-D device simulation, from which lumped model parameters are extracted. The speed limits of the PIN photodiodes can also be calculated under various structural conditions from the model. Thus optimum design of horizontally integrated PIN photodiodes for high speed operation are possible. Such InGaAs/InP PIN photodiodes for long-wavelength communications are fabricated using pit etch, epi growth, planarization, diffusion and metallization processes. Planarization process using both RIE and wet etching and diffusion process using evaporated Zn$_{3}P_{2}$ film are developed. Characterization of the fabricated devices is performed through C-V and I-V measurements. At a reserve bias of 10V, the dark current is less than 5nA and capacitance is about 0.4pF. The calculated bandwidth using the measured series resistance and capacitance is about 4.23GHz.

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X-ray Radiation from Pulsed Discharge Plasma (펄스형 방전플라스마에서 발생하는 X선 측정)

  • Choi, Woon-Sang;Moon, Byeong-Yeon;Kwak, Ho-Won
    • Journal of Korean Ophthalmic Optics Society
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    • v.11 no.4
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    • pp.311-315
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    • 2006
  • We investigated X-ray radiated from the pulsed Plasma Focus device that translated from electric energy into electromagnetic wave by electric discharge. X-ray radiation is analysed by using pin photodiode and 0.5mm pinhole camera shielded by $25{\mu}m$ Be. The condition of X-ray radiation was that the discharging voltage was 15 kV and the working gas were 0.12 torr Argon. Reproducibility of X-ray radiation is investigated and X-ray temperature is calculated above 3keV.

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fabrication of the Microfluidic LOC System with Photodiode (광 다이오드를 가진 Microfluidic LOC 시스템 제작)

  • 김현기;신경식;김용국;이상렬;김태송;양은경;주병권
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12
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    • pp.1097-1102
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    • 2003
  • In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode, Considering these results, we fabricated p-i-n diodes on the high resistive(4㏀$.$cm) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of pin diode can be decreased by the application of finger pattern has parallel resistance structure from 571Ω to 393Ω.

Wideband Receiver Module for LADAR Using Large Area InGaAs Avalanche Photodiode (대면적 APD를 이용한 LADAR용 광대역 광수신기)

  • Park, Chan-Yong;Kim, Dug-Bong;Kim, Chung-Hwan;Kwon, Yongjoon;Kang, EungCheol;Lee, Changjae;Choi, Soon-Gyu;La, Jongpil;Ko, Jin Sin
    • Korean Journal of Optics and Photonics
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    • v.24 no.1
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    • pp.1-8
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    • 2013
  • In this paper, we report design, fabrication and characterization of the WBRM (Wide Band Receiver Module) for LADAR (LAser Detection And Ranging) application. The WBRM has been designed and fabricated using self-made APD (Avalanche Photodiode) and TIA (Trans-impedance Amplifier). The APD and TIA chips have been integrated on 12-pin TO8 header using self-made ceramic submount and circuit. The WBRM module showed 450 ps of rise time, and corresponding 780 MHz bandwidth. Furthermore, it showed very low output noise less than 0.8 mV, and higher SNR than 15 for 150 nW of MDS(Minimum Detectable Signal). To the author's knowledge, this is the best performance of an optical receiver module for LIDAR fabricated by 200 um InGaAs APD.

Velocity Measurement of Moving Object Using the Semiconductor Laser LDV (반도체 레이저 LDV를 이용한 회전체의 속도측정)

  • 이병욱;황대석;최종운;김용평
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.226-227
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    • 2000
  • Laser Doppler velocimeters: (LDV)$^{1)}$ 의 대부분의 기본원리는 호모다인(honodyne)방법을 사용한다. 호모다인 방법 중에서 많이 사용되는 방법으로는 마이켈슨 간섭계식과 되먹임식(self-mixing type)$^{2)}$ 이 있다. 마이켈슨 간섭계식은 구성하는데는 많은 광학부품과 정밀한 정렬 장치들을 필요로 한다. 반면에 되먹임식은 레이저 공진기의 고유 주파수와 도플러 이동된 산란광을 공진기 속에서 자체 혼합하여 발생한 차주파수를 레이저 공진기 내부에 있는 pin-photodiode로 측정하므로 마이켈슨 간섭계에 비하여 간단한 장치로 속도계를 구성할 수 있다. (중략)

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