• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.202-205
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• 2004

We investigated the electro-optical(EO) performances of the super twisted nematic liquid crystal display(STN-LCD) on the polyimide(PI) surface using polymer film. The NLC pretilt angles generated are about $18^{\circ}$ by the rubbing alignment method on thin plastic substrates. However, the pretilt angle are at about $13^{\circ}$ lower on the glass substrate than on thin plastic substrate. Monodomain alignment of the plastic STN-LCD can be observed. A stable voltage-transmittance(V-T) curve of the plastic STN-LCD was observed on the polyimide(PI) surfaces using polymer film. Also, a faster response time for the plastic STN-LCD on the polyimide(PI) surfaces using polymer film can be achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1095-1099
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• 2004

We investigated the electro-optica](EO) performances of the super twisted nematic liquid crystal display(STN-LCD) on the polyimide(PI) surface using polymer film. The NLC(Nematic Liquid Crystal) pretilt angles generated are about 18$^{\circ}$by the rubbing alignment method on thin plastic substrates. However, the pretilt angle are at about 13$^{\circ}$ lower on the glass substrate than on thin plastic substrate. Monodomain alignment of the plastic STN-LCD can be observed. A stable voltage-transmittance(V-T) curve of the plastic STN-LCD was observed on the polyimide(PI) surfaces using polymer film. Also, a faster response time for the plastic STN-LCD on the polyimide(PI) surfaces using polymer film can be achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.487-488
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• 2005

We have investigated the Electro-Optical Characteristics for a nematic liquid crystal (NLC) alignment with rubbing alignment method on polyimide surfaces using plastic substrates. It was found that monodomain alignment of NLC is obtained with rubbing alignment method on polyimide surfaces using thin plastic substrates. EO characteristics of the TN-LCD with a rubbed PI surface based on polymer are almost the same as that of the TN-LCD with a rubbed PI surface based on glass. However, the transmittances of the TN-LCD with a rubbed PI surface based on polymer is less than that with a rubbed PI surface based on glass.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.641-644
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• 2008

Traditional LTPS TFT needs additional LDD process to decrease leakage current. However the fabrication process is no suitable for PI substrate. Additional laser multi-irradiation will damage the poly-Si to cause the TFT electrical degrade. Therefore we propose the simplified process to activate the $N^+$ and $N^-$ at the same time.

• Journal of Powder Materials
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• v.20 no.2
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• pp.120-124
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• 2013

This study is carried out to develop the new process for the fabrication of ultra-fine electrodes on the flexible substrates using superhydrophobic effect. A facile method was developed to form the ultra-fine trenches on the flexible substrates treated by plasma etching and to print the fine metal electrodes using conductive nano-ink. Various plasma etching conditions were investigated for the hydrophobic surface treatment of flexible polyimide (PI) films. The micro-trench on the hydrophobic PI film fabricated under optimized conditions was obtained by mechanical scratching, which gave the hydrophilic property only to the trench area. Finally, the patterning by selective deposition of ink materials was performed using the conductive silver nano-ink. The interface between the conductive nanoparticles and the flexible substrates were characterized by scanning electron microscope. The increase of the sintering temperature and metal concentration of ink caused the reduction of electrical resistance. The sintering temperature lower than $200^{\circ}C$ resulted in good interfacial bonding between Ag electrode and PI film substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1009-1013
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• 2009

In this study, we have been synthesized the dielectric layer using pure organic and organic-inorganic hybrid precursor on flexible substrate for improving of the organic thin film transistors (OTFTs) and, design and fabrication of organic thin-film transistors (OTFTs) using small-molecule organic semiconductors with pentacene as the active layer with record device performance. In this work OTFT test structures fabricated on polymerized substrates were utilized to provide a convenient substrate, gate contact, and gate insulator for the processing and characterization of organic materials and their transistors. By an adhesion development between gate metal and PI substrate, a PI film was treated using $O_2$ and $N_2$ gas. The best peel strength of PI film is 109.07 gf/mm. Also, we have studied the electric characteristics of pentacene field-effect transistors with the polymer gate-dielectrics such as cyclohexane and hybrid (cyclohexane+TEOS). The transistors with cyclohexane gate-dielectric has higher field-effect mobility, $\mu_{FET}=0.84\;cm^2/v_s$, and smaller threshold voltage, $V_T=-6.8\;V$, compared with the transistor with hybrid gate-dielectric.

• Journal of the Korean Magnetics Society
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• v.7 no.6
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• pp.299-307
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• 1997

NdFeB films have been grown onto Si(100) substrate by a KrF pulsed laser ablation of the targets of $Nd_xFe_{90.98-x}B_{9.02}$ (x=17.51~27.51) at the substrate temperature of 620~700 $^{\circ}C$ and the laser beam energy density of 2.75~5.99 J/$\textrm{cm}^2$. The films exhibit no preferred orientation, however, good hard magnetic properties were produced from as-deposited condition : $4{\pi}M_s$=7 kG, $4{\pi}M_r$=4 kG, and $H_c$=300~1000 Oe. The depositon rate was not greatly influenced by changing the substrate temperature, but it increases linearly by increasing the beam energy density. The beam energy density of 3 J/$\textrm{cm}^2$ gave the optimal condition to have the highest $4{\pi}M_r$ and $H_c$ as well. The higher content of Nd induces a higher coercivity and $4{\pi}M_r$ at the same time without prominent change in $4{\pi}M_s$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.709-710
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• 2010

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.415-416
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• 2010

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.342-342
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• 2010

We have investigated an Au intercalated monolayer graphene on Ni(111) using angle-resolved photoemission spectroscopy (ARPES), high resolution photoemission spectroscopy (HRPES), and low energy electron diffraction (LEED) at the 3A2 ARUPS beamline in Pohang Accelerator Laboratory. We find the monolayer graphene is well grown on the Ni(111) surface by the adsorption of acetylene. However, the graphene does not show the characteristic $\pi$ band near the Fermi level due to its strong interaction with the underlying substrate. When Au is adsorbed on the surface and then annealed at high temperature, we observe that Au is intercalated underneath the monolayer graphene. The process of the Au intercalation was monitored by HRPES of corresponding Au 4f and C 1s core levels as well as the electronic structure of the $\sigma$, $\pi$ states at $\Gamma$, K points. The $\sigma$, $\pi$ bands of graphene shift towards the Fermi level and the $\pi$ band is clearly observed at K point after the intercalation of full monolayer Au. The full width at half maximum (FWHM) of the C 1s peak narrows to approximately 0.42 eV after intercalation. These results imply that the interaction between the graphene and substrate is considerably weakened after the Au intercalation. We will discuss the graphene is really closer to ideal free standing graphene suggested recently.