• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.7
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• pp.1-6
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• 2002

For an optimum device design of nano-scale SOI devices, this paper describes the short channel effects of multi-gate structures SOI MOSFETs such as double gate, triple gate and quadruple gate, as well as a new proposed Pi gate using computer simulation. The simulation has been performed with different channel doping concentrations, channel widths, silicon film thickness, and vertical gate extension depths of Pi gate. From the simulation results, it is found that Pi gate devices have a large margin in determination of doping concentrations, channel widths and film thickness comparing to double and triple gate devices because Pi gate devices offer a better short channel effects.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.816-818
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• 1998

In this paper Polyimide(PI) thin film are fabricated by vapor deposition polymerization(VDP) of dry process which are easy to control the film's thickness and hard to pollute due to volatile solvent. The FT-IR spectrum show that PAA thin films fabricated by VDP are changed to PI thin film by thermal curing. From AFM(Atomic Force Microscopy) experimental as the higher curing temperature. the thin film thickness decreases and roughness decresse.

• The Journal of the Korea Contents Association
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• v.14 no.3
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• pp.59-68
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• 2014

Dir. Kim, Muk was known to the representative director of Korean action and thriller film from the last of 1950's to the first of 1970's. His first film is melodrama (1958). But he mainly makes action genre film after (1960). This reserch discussed on Kim, Muk's activity in Koream film world and introduceed his all films from the first of 1950's to of 1970's. In conclusionly I arranged his film style and KIm, Muk's film making metod of action film.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.870-872
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• 2008

It is known that AC electric field to drive IPS mode of liquid crystal display (LCD) causes reduction of the contrast after long period of display operation. Our results are presented in this paper on a base of a model of interaction between surface of PI alignment film and LC molecules. We conclude that the surface viscosity of PI alignment film is one of the most important factors for the contrast reduction phenomenon.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.10-11
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• 1991

In this paper, Arachidic Acid of long-chain fatty acid was soluted by chloroform and observed $\pi$-A curve in trough. In our experimental result, optimum pressure for fabricating the LB film was 30mN/m. In $\pi$-A curve measurment, temperature dependence was investigated between 20-50($^{\circ}C$). However, in this temperature range, the variation of solid phase pressure was not observed.

• Polymer(Korea)
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• v.31 no.2
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• pp.117-122
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• 2007

In this work, the mechanical and electrical properties, and thermal stability of vapor-grown carbon nanofibers/polyimide (VGCNFs/PI) composite film synthesized by in-situ polymerization were investigated in terms of tensile properties, volume resistivity and thermogravimetric analysis (TGA), respectively. From the results, the addition of VGCNFs with a certain amount into polyimide led to obvious improvement in tensile strength. The volume resistivity of the films was decreased with increasing the VGCNFs content and the electrical percolation threshold appeared between 1 and 3 wt% of VGCNFs content, which was probably caused by the formation of interconnective structures among the VGCNFs in a composite system. The thermal stability of the film was higher than that of pure PI one. This result indicated that the crosslinking of VGCNFs/PI Composites was enhanced by well-distribution of YGCNFs in PI resin, resulting in the increase of the thermal stability of the resulting composites.

• Carbon letters
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• v.13 no.4
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• pp.230-235
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• 2012

In this study, reduced graphene oxide/polyimide (r-GO/PI) composite films, which showed significant enhancement in their electrical conductivity, were successfully fabricated. GO was prepared from graphite using a modified Hummers method. The GO was used as a nanofiller material for the preparation of r-GO/PI composites by in-situ polymerization. An addition of 20 wt% of GO led to a significant decrease in the volume resistivity of composite films by less than nine orders of magnitude compared to that of pure PI films due to the electrical percolation networks of reduced GO created during imidization within the films. A tensile test indicated that the Young's modulus of the r-GO/PI composite film containing 20 wt% GO increased drastically from 2.3 GPa to 4.4 GPa, which was an improvement of approximately 84% compared to that of pure PI film. In addition, the corresponding tensile strength was found to have decreased only by 12%, from 113 MPa to 99 MPa.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1585-1587
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• 1997

We investigated the generation of high pretilt angle for nematic liquid crystal (NLC) in the cell with slanted non-polarized ultraviolet (UV) light irradiation on two kinds of the polyimide (PI) film. It was shown that the monodomain alignment in NLC is obtained in the cell with slanted non-polarized UV light irradiation on PI surface. The pretilt angle of NLC is generated about 3 degrees in the cell with slanted non-polarized UV light irradiation with 70 degrees on PI surface without side chain. But, the pretilt angle of NLC is generated about 1 degree in the cell with slanted non-polarized UV light irradiation with 80 degrees on PI surface with side chain. We consider that the pretilt angle generation in NLC is attributted to anisotropic dispersion force between the LC molecular and the PI surface.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.15-16
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• 2008

In case manufacturing COF, through hole should be made to be used for a pathway connecting the conductive layers of its both faces. In case Cu-plating inside of through hole with electroless plating way, contact between Cu and PI film gets bad to be fell apart from PI by the impact of applying to the electric devices. Therefore, after sputtering is applying on inner through hole, then a method to perform electroplating process. In this study, after changing sputtering condition to manufacture FCCL, we looked the changeability of the upper PI and inner hole Cu layers. Making use of RF Magnetron sputtering equipment, we coated Cu thin film and Cu-plated on it through electroplating. After cold-mounting the completed FCCL, we examined hole section through an optical microscope. From the result of test, with parameters deposition pressure and deposition time, both the thickness of the hole plated layer and PI plated upper layer increased at regular rate, increasing the thickness of Cu sputter layer. However, from the result of test in increasing RF-power, we could know the increment rate of hole plated layer is considerably greater than that of PI plated upper layer. Therefore, we finally acquired good result; if you want only to increase the plated layer of inner hole, it's much better to increase RF-power.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.10
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• pp.112-118
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• 2021

In this study, an inspection method using a color image is proposed to conduct a real-time inspection of covalent organic framework (COF) films to detect defects, if any. The COF film consists of an upper pattern SR and a lower PI. The proposed system detects the defects of more than 20 ㎛ on the SR surface owing to the characteristics of the pattern, whereas on the PI surface, it detects defects of more than 4 ㎛ by utilizing a micro-optical system. In the existing system, it is difficult for the operator to conduct a full inspection through a high-performance microscope. The proposed inspection algorithm performs the inspection by separating each color component using the color contrast of the pattern on the SR side, and on the PI surface it inspects the bonding state of the mounted chip. As a result, it is possible to confirm the exact location of the defects through the SR and PI surface inspections in the implemented inspection.