• Journal of Advanced Marine Engineering and Technology
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• 제28권6호
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• pp.962-971
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• 2004

This paper has dealt with thermo-physical properties of microencapsulated phase change material slurry as a latent heat storage material having a low melting point. The measured results of the thermo-physical properties of the test microencapsulated phase change material slurry, those are, density, specific heat, thermal conductivity and viscosity, were discussed for the temperature region of solid and liquid phases of the dispersion material (paraffin). The measurements of these properties of microencapsulated phase change material slurry have been carried out by using a specific-gravity meter, a water calorimeter, a differential scanning calorimeter(DSC), a transient hot wire method and rotating type viscometer, respectively. It was clarified that the additional properties law could be applied to the estimation of the density and specific heat of microencapsulated phase change material slurry and also the Euckens equation could be applied to the estimation of the thermal conductivity of this slurry.

• 한국가시화정보학회지
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• 제21권2호
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• pp.63-71
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• 2023

Energy storage and distribution technologies are emerging as important factors as research on renewable energy continues. Analyzing the thermal flow of phase change material inside a latent heat storage device and to predict the phase change time is an important part for improvement of thermal performance. However, most of the current research is based on the trial-and-error experimental investigation to measure the phase change time. Therefore, in this study, a can-type phase change material container was designed, and the numerical method for analyzing the thermal flow of phase change material was established and validated. The error rate of the phase change time between the numerical and experimental results was within 5%, which proves its reliability. As a result, the phase change finishing times were found to be 78 minutes with inlet fluid temperature of 80℃ during charging process, and 126 minutes with inlet fluid temperature of 9℃ during discharging process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.57-57
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• 2010

In this study, nano-sized phase change materials were evaluated using nanoimprint lithography and c-AFM technique. The 200nm in diameter phase change nano-pillar device of GeSbTe, AgInSbTe, InSe, GeTe, GeSb were successfully fabricated using nanoimprint lithography. And the electrical properties of the phase change nano-pillar device were evaluated using c-AFM with pulse generator and voltage source.

• Journal of Advanced Marine Engineering and Technology
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• 제32권1호
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• pp.162-168
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• 2008

In this paper, we analyzed the heat transfer phenomenon and the reset current variation of PRAM device with thickness of phase change material using the 3-D finite element analysis tool. From the simulation, Joule's heat was generated at the contact surface of phase change material and bottom electrode of PRAM. As the thickness of phase change material was decreased, the reset current was highly increased. In case thickness of phase change material thin film was $200\;{\AA}$, heat increased through top electrode and reset current caused by phase transition highly increased. And as thermal conductivity of top electrode decreased, temperature of unit memory cell was increased.

• 한국전기전자재료학회논문지
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• 제28권5호
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• pp.285-290
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• 2015

The phase change memory material is an active element in phase change memory and exhibits reversible phase transition behavior by thermal energy input. The doping of the phase change memory material with Ga leads to the increase of its crystallization temperature and the improvement of its amorphous stability. In this study, we investigated the effect of GaGe sputtering power on the formation of the phase change memory material including Ga. The deposition rate linearly increased to a maximum of 127 nm and the surface roughness remained uniform as the GaGe sputtering power increased in the range from 0 to 75 W. The Ga concentration in the thin film material abruptly increased at the critical sputtering power of 60 W. This influence of GaGe sputtering power was confirmed to result from a combined sputtering-evaporation process of Ga occurring due to the low melting point of Ga ($29.77^{\circ}C$).

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2014년도 춘계 학술논문 발표대회
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• pp.150-151
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• 2014

A mold of free-form concrete segment can be used only one time. Thus, the construction duration and cost are increased. The materials of the mold such as wood and metal have limitations due to the implementation and reuse. The review of the material of the mold for free-form concrete segment is needed to reduce duration and production cost. Phase change material can be used both to implement free-shape by heating and to produce mold after cooling. After using Phase change material can be re-used to mold by heating. The scope of this study is many kind of phase change materials for molding. The aim of this study is to analyze the phase change materials for production of changable mold for free-form concrete segment. In this study, the paraffin wax that is melted at 64℃ was selected by considering both the energy efficiency and the weather of Korea.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.48-52
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• 2014

In this paper, scaling down characteristics of vertical channel phase random access memory are investigated with device simulator and finite element analysis simulator. Electrical properties of select transistor are obtained by device simulator and those of phase change material are obtained by finite element analysis simulator. From the fusion of both data, scaling properties of vertical channel phase change random access memory (VPCRAM) are considered with ITRS roadmap. Simulation of set reset current are carried out to analyze the feasibility of scaling down and compared with values in ITRS roadmap. Simulation results show that width and length ratio of the phase change material (PCM) is key parameter of scaling down in VPCRAM. Thermal simulation results provide the design guideline of VPCRAM. Optimization of phase change material in VPCRAM can be achieved by oxide sidewall process optimization.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.144-145
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• 2007

Phase change random access memory is one of the most promising candidates for next generation non-volatile memories. However, the high reset current is one major obstacle to develop a high density PRAM. One way of the reset current reduction is to develop the new phase change material. In this paper, to reduce the reset current for phase transition, we have investigated the effect of phase change material parameters using finite element analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.97-98
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• 2007

In this paper, we analyzed the reset current variation of PRAM device with top electrode using the 3-D finite element analysis tool. As thickness of phase change material thin film decreased, reset current caused by phase transition highly increased. Joule's heat which was generated at the contact surface of phase change material and bottom electrode of PRAM was given off through top electrode to which was transferred phase change material. As thermal conductivity of top electrode decreased, heating temperate was increased.

• 한국염색가공학회지
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• 제19권1호
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• pp.37-44
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• 2007

In this study, for textile use, the octadecane of phase change materials(PCM) was encapsulated in several micro-diameter shell which prevents leakage of the material during its liquid phase. Microencapsulated PCM(PM) was prepared with the different weight ratio of core material to wall material and by interfacial polymerization methods using polyurea as shell material. Phase stability for O/W emulsion of PCM and PVA aq. (PE) was evaluated by Turbiscan Lab. The capsule formation win identified using FT-IR. Physical properties of microcapsules including diameter, particle distribution, morphology were investigated. Thermal transport properties of suede treated with PM(SPM) were determined by KES-F7 system.