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http://dx.doi.org/10.5916/jkosme.2008.32.1.162

Electrical and thermal characteristics of PRAM with thickness of phase change thin film  

Choi, Hong-Kyw (한국해양대학교 전기전자공학부)
Kim, Hong-Seung (한국해양대학교 나노데이타 시스템학부)
Lee, Seong-Hwan (위덕대학교 에너지전기공학부)
Jang, Nak-Won (한국해양대학교 전기전자공학부)
Publication Information
Journal of Advanced Marine Engineering and Technology / v.32, no.1, 2008 , pp. 162-168 More about this Journal
Abstract
In this paper, we analyzed the heat transfer phenomenon and the reset current variation of PRAM device with thickness of phase change material using the 3-D finite element analysis tool. From the simulation, Joule's heat was generated at the contact surface of phase change material and bottom electrode of PRAM. As the thickness of phase change material was decreased, the reset current was highly increased. In case thickness of phase change material thin film was $200\;{\AA}$, heat increased through top electrode and reset current caused by phase transition highly increased. And as thermal conductivity of top electrode decreased, temperature of unit memory cell was increased.
Keywords
Phase change random access memory; Finite element analysis; Top electrode; Reset current; Thermal conductivity;
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1 S.Y. Lee, K.j. Choi, S.O. Ryu, S.M. Yoon, N.Y. Lee, Y.S. Park, S.H. Lee and B.G. Yu, 'Polycrystalline silicon- germanium heating layer for phase- change memory application', Applied physic letter, Vol.89, pp.053517-1-3, 2006   DOI   ScienceOn
2 I. Friedrich, V. Weidenhof, W. Njoroge, P. Franz, M.Wuttig, "Structural transfor- mation of $Ge_2Sb_2Te_5$ films studied by electrical resistance measurements', J. Appl. Phys., Vol.87, No.9, p.4130, 2000   DOI   ScienceOn
3 S.H.Lee, Y.N.Hwang, S.Y.Lee, K.C. Ryoo, S.J.Ahn, H.C. Koo, W.C.Jeong, Y.T.Kim, G.H.Koh, G.T.Jeong, H.S. Jeong and Kinam Kim, 'Full Integra- tion and Cell Characteristics for 64Mb non-volatile PRAM', IEEE Symposium on VLSI Tech. Dig., pp.20-21, 2004
4 S.Lai, T.Lowrey, 'OUM - A 180nm nonvolatile memory cell element tech- nology for stand alone and embedded applications', IEEE IEDM Tech. Dig., pp803, 2001
5 N.W.JANG, Y.J.SONG, H.H.KIM, D.J.JUNG, S.Y.LEE, J.K.LEE, C.J.KIM and KINAM KIM, 'Effects of UV Process on High Density 1T1C FRAM Device' Integrated Ferroelectrics, Vol. 39, pp.51-59, 2001   DOI   ScienceOn
6 N.Yamada, E.Ohno, K.Nishiuchi, N. Akahira, M.Takao, 'Rapid-Phase Transi- tions of $GeTe-Sb_2Te_3$ Pseudobinary Amorphous Thin Films for an Optical Disk Memory', J. Appl. Phys., Vol.69(5), pp.2849, 1991   DOI
7 Y.N.Hwang, S.H.Lee, S.J.Ahn, S.Y. Lee, K.C.Ryoo, H.S. Hong, H.C. Koo, F. Yeung, J.H. Oh, H.J. Kim, W.C. Jeong, J.H Park, H. Horii, Y.H. Ha, J.H. Yi, G.H. Koh, G.T.Jeong, H.S. Jeong and Kinam Kim, 'Writing cur- rent reduction for high-density phase change RAM', IEDM 03, pp.893-896, 2003