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Electrical and thermal characteristics of PRAM with thickness of phase change thin film

상변화 박막의 두께에 따른 상변화 메모리의 전류 및 열 특성

  • 최홍규 (한국해양대학교 전기전자공학부) ;
  • 김홍승 (한국해양대학교 나노데이타 시스템학부) ;
  • 이성환 (위덕대학교 에너지전기공학부) ;
  • 장낙원 (한국해양대학교 전기전자공학부)
  • Published : 2008.01.31

Abstract

In this paper, we analyzed the heat transfer phenomenon and the reset current variation of PRAM device with thickness of phase change material using the 3-D finite element analysis tool. From the simulation, Joule's heat was generated at the contact surface of phase change material and bottom electrode of PRAM. As the thickness of phase change material was decreased, the reset current was highly increased. In case thickness of phase change material thin film was $200\;{\AA}$, heat increased through top electrode and reset current caused by phase transition highly increased. And as thermal conductivity of top electrode decreased, temperature of unit memory cell was increased.

Keywords

References

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