• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.235-243
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• 1997

The high-$T_c$ superconducting phase, $YBa_2Cu_3O_x$, was deposited on the single crystal MgO substrate, using a liquid aerosol feed method in a plasma enhanced chemical vapor deposition(PECVD) reactor. The effect of the plasma distribution depending on the design of a reactor was studied by the analysis of the microstructures of thin films. The particles landed were frequently observed on the films and the two causes that were responsible for the particle deposition were explained. The particles were deposited by the unstable and non-uniform plasma and the low evaporation rate of the precursors. Also, the thin film deposition rate decreased significantly as the distance between the evaporating location and the substrate increased.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.225-230
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• 2006

Nanoimprint lithography (NIL) is a novel method of fabricating nanometer scale patterns. It is a simple process with low cost, high throughput and resolution. NIL creates patterns by mechanical deformation of an imprint resist and physical contact process. The imprint resist is typically a monomer or polymer formulation that is cured by heat or UV light during the imprinting process. Stiction between the resist and the stamp is resulted from this physical contact process. Stiction issue is more important in the stamps including narrow pattern size and wide area. Therefore, the antistiction layer coating is very effective to prevent this problem and ensure successful NIL. In this paper, an antistiction layer was deposited and characterized by PECVD (plasma enhanced chemical vapor deposition) method for metal stamps. Deposition rates of an antistiction layer on Si and Ni substrates were in proportion to deposited time and 3.4 nm/min and 2.5 nm/min, respectively. A 50 nm thick antistiction layer showed 90% relative transmittance at 365 nm wavelength. Contact angle result showed good hydrophobicity over 105 degree. $CF_2$ and $CF_3$ peaks were founded in ATR-FTIR analysis. The thicknesses and the contact angle of a 50 nm thick antistiction film were slightly changed during chemical resistance test using acetone and sulfuric acid. To evaluate the deposited antistiction layer, a 50 nm thick film was coated on a stainless steel stamp made by wet etching process. A PMMA substrate was successfully imprinting without pattern degradations by the stainless steel stamp with an antistiction layer. The test result shows that antistiction layer coating is very effective for NIL.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.250-251
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• 2005

Tin dioxide (SnO$_2$) thin films have been prepared on Si wafer (100) by Plasma Enhanced Chemical Vapor Deposition (PECVD). SnO$_2$ thin films were prepared from mixtures of dibutyltin diacetate as a precursor, oxygen as an oxidant at 275, 325, 375, 425$^{\circ}C$, respectively. The microstructure of deposited films was characterized by X-ray diffraction and field emission scanning electron microscopy. Structural characteristics of prepared SnO$_2$ thin films were investigated with different substrate temperature. The deposition rate was linearly increased with substrate temperature. Surface morphology and uniformity of prepared thin film was excellent at 375$^{\circ}C$ and grain size was averagely 25nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.59-61
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• 2002

In this study we attempted to diagnose the distribution of nitrogen plasma density generated using PECVD(plasma enhanced chemical vapor deposition). The distribution of plasma density formed in a PECVD chamber were measured by DLP2000. The experiment results showed that the plasma density is related to RF power and gas flow rate. As RF power gets higher, the plasma density linearly increased. And the experimental results revealed that a pressure in chamber affects plasma density.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.350-356
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• 1996

This paper presents VHF-Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD) of Ti/TiN with silne reduction process, using $TiCl_4$ source. VHF plasma, which is denser than a conventional RF plasma, produces a large number of radicals. Silane reduction process, which supplies silane radicals, more promotes dissociation of Ti-Cl bond than a conventional hydrogen reduction process. therefore, the VHF-PECVD with silane reduction process forms high quality Ti/TiN films, which have low level of Cl content(<0.2 at.%). In result, the resistivity for Ti or TiN is less than 200$\mu$$\Omega$cm. The surface morphology of Ti film is very smooth. The structure of TiN film is amorphous. Furthermore, excellent step coverage for the films is obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.276-279
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• 2004

Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.303-308
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• 2003

Amorphous carbon nitride films deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition (PECVD) technique using CH$_4$and $N_2$as reaction gases were thermally annealed at various temperatures under$ N_2$atmosphere, then their physical properties were investigated particularly as a function of annealing temperature. Above $600^{\circ}C$ a small amount of crystalline $\beta$-$C_3$$N_4$ phase evolves, while the film surface becomes very rough due to agglomeration of fine grains on the surface. As the annealing temperature increases, both the hardness and the $sp^3$ bonding nature are enhanced. In contrast to our expectation, higher annealing temperature results in a relatively higher friction mainly due to big increase in roughness at that temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.680-686
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• 2006

Tin oxide$(SnO_2)$ thin films were prepared on glass substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. $SnO_2$ thin films were prepared using gas mixture of dibutyltin diacetate as a precursor and oxygen as an oxidant at 275, 325, 375, $425^{\circ}C$, respectively as a function of deposition temperature. The XRD peaks corresponded to those of polycrystalline $SnO_2$, which is in the tetragonal system with a rutil-type structure. As the deposition temperature increased, the texture plane of $SnO_2$ changed from (200) plane to denser (211) and (110) planes. Lower deposition temperature and shorter deposition time led to decreasing surface roughness and electrical resistivity of the formed thin films at $325\sim425^{\circ}C$. The properties of $SnO_2$ films were critically affected by deposition temperature and time.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.565-569
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• 2006

Plasma enhanced chemical vapor deposition(PECVD) is a well established technique for the deposition of hydrogenated film of silicon nitride (SiNx:H), which is commonly used as an antireflection coating as well as passivating layer in crystalline silicon solar cell. PECVD-SiNx:H films were investigated by varying the deposition and annealing conditions to optimize for the application in silicon solar cells. By varying the gas ratio (ammonia to silane), the silicon nitride films of refractive indices 1.85 - 2.45 were obtained. The film deposited at $450^{\circ}C$ showed the best carrier lifetime through the film deposition rate was not encouraging. The film deposited with the gas ratio of 0.57 showed the best carrier lifetime after annealing at a temperature of $800^{\circ}C$. The single crystalline silicon solar cells fabricated in conventional industrial production line applying the optimized film deposition and annealing conditions on large area substrate of size $125mm{\times}125mm$ (pseudo square) was found to have the conversion efficiencies as high as 17.05 %. Low cost and high efficiency silicon solar cells fabrication sequence has also been explained in this paper.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.6
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• pp.113-120
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• 2007

Chemical vapor deposition (CVD) is one of the various synthesis methods that have been employed for carbon nanotube (CNT) growth. In particular, Ren et al reported that large areas of vertically aligned multi-wall carbon nanotubes could be grown using a direct current (dc) PECVD system. The synthesis of CNT requires a metal catalyst layer, etchant gas, and a carbon source. In this work, the substrates consists of Si wafers with Ni-deposited film. Ammonia $NH_3$) and acetylene ($C_2H_2$) were used as the etchant gases and carbon source, respectively. Pretreated conditions had an influence on vertical growth and density of CNTs. And patterned growth of CNTs could be achieved by lithographical defining the Ni catalyst prior to growth. The length of single CNT was increased as niclel dot size increased, but the growth rate was reduced when nickel dot size was more than 200 nm due to the synthesis of several CNTs on single Ni dot. The morphology of the carbon nanotubes by TEM showed that vertical CNTs were multi-wall and tip-type growth mode structure in which a Ni cap was at the end of the CNT.