• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.27-28
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• 2000

We examined ($He_x-Ne_{l-x}$)-Xe gas discharge in an AC PDP cell by computer simulation to understand the gas mixing effects. The breakdown and sustain voltage were significantly lowered with the addition of Ne into He-Xe. The luminance and efficiency in ($He_x-Ne_{l-x}$)-Xe also improved when compared with the He-Xe or Ne-Xe gas mixture. The luminance is maximum around $30{\sim}40%$ He addition, while the efficiency shows peak values at 70% He. Two-dimensional numerical simulation was done to explain these results.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.605-608
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• 2007

The discharge characteristics of the face-to-face sustain electrode structure employing auxiliary address pulse are investigated under a sustain driving frequency of 20 kHz and various auxiliary address pulse widths (500 ns, $1{\mu}s$, $2\;{\mu}s$) in the 6-in. test panel (42-in. Full HD grade) with a pressure of 450 Torr and a 4 % Xe-content. The luminance and the luminous efficiency at the auxiliary address pulse width of 500 ns are improved more than these of $1\;{\mu}s$ and $2\;{\mu}s$. At the auxiliary address pulse width of 500 ns, the luminous efficiency shows about 0.96 lm/W at the auxiliary pulse of 90 V and the sustain voltage of 260 V.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.62-66
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• 2004

This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.95-98
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• 2003

Tin doped indium oxide(ITO) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ITO films with the optimum growth conditions showed resistivity of $2.36{\times}10^{-4}(\Omega}-cm$ and transmittance of 86.28% for a film 680nm thick in the wavelength range of the visible spectrum.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.6
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• pp.7-13
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• 2008

Through two-dimensional numerical simulations, we analyzed the effects of new cell structure for the luminous efficacy improvement in an ac plasma display panel. In the new structure with 5 electrodes, two auxiliary electrodes are arranged between X and Y electrodes with long gap. Through the application of adequate auxiliary pulse on the address electrode, the luminous efficacy in the new cell structure showed the improvement of 52[%] in comparison with that of conventional cell structure with short gap between X and Y electrodes. Consequently, as the short gap discharge between auxiliary electrodes decreases and the long gap discharge between X and Y electrodes increases, the result of VUV generation efficacy shows higher improvement. The reliability of simulation result could he confirmed by the experimental result in the test panel.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.15 no.6
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• pp.1-7
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• 2001

To analyze the driving principle of PDP, the influence on the discharge characteristics of space charge was researched. Space charge generated by the priming discharge shortens delay time of the discharge which happens as follows and shorts response time. Such influences are valid up to about 30㎲ after generating priming discharge. This space charge decreases dicharge ignition voltage of the cell near priming cell and the influences are most greatly alerted on the discharge of cell which is adjacent most. And the dependency to spare charge strengthens because discharge ignition voltage drop grows by narrowing of discharge pulse width. But the influence on space charge was observed very slightly in pulse width 1㎲ or more. Therefore, to cause a steady discharge, pulse width should become 1㎲ or more at least without being influenced for space charge of the adjoining discharge.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.10a
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• pp.177-179
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• 2009

In order to investigate the possible application of ZnO films as a transparent conducting oxide (TCO) electrode, ZnO:Al films were prepared by RF magnetron sputtering method. The effects of surface treatment and doping concentration on the structural and electrical properties of ZnO films were mainly studied experimentally. Five-inch PDP cells using either a ZnO:Al or indium tin oxide (ITO) electrode were also fabricated separately under the same manufacturing conditions. The luminous properties of both the transparent conducting oxide electrode were measured and compared with each other. By doping the ZnO target with 2 wt% of Al2O3, the film deposited at a chemical surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. And DBD surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. Although the luminance and luminous efficiency of the transparent conducting oxide electrode using ZnO:AI are lower than those of the cell with the ITO electrode by about 10%, these values are sufficient enough to be considered for the normal operation of TCO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.857-860
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• 2003

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The electrical and optical properties of both the ITO and ZnO:Al thin films were investigated as functions of substrate temperature, working gas pressure and deposition time. ITO and ZnO:Al films with the the present experimental conditions of temperature and pressure showed resistivity of $2.36{\times}10^{-4}{\Omega}-cm,\;9.42{\times}10^{-4}{\Omega}-cm$ and transmittance of 86.28%, 90.88% in the wavelength range of the visible spectrum, respectively.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1628-1630
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• 2002

In this paper, we measured 3-dimensional temporal behavior of the light emitted from discharge cell of plasma display panel(PDP) as a function of the pressure using the scanned point detecting system. The detected light signal through the PM tube is sent on the oscilloscope and oscilloscope which is connected to PC with GPIB. The whole system is controlled by a PC. From the temporal behavior results, we could analyze the discharge behavior of panel with Ne-Xe(4%) mixing gas and 300torr, 400torr, 500torr pressure. The top view of panel shows that the discharge moves from inner edge of cathode electrode to outer cathode electrode forming arc type. At the 300torr, initial emission time is very fast. The side view of panel shows that the light is detected up to $150{\mu}m$ height of barrier rib. In the panel of 300torr, emission distribution is wider than the others.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.143-146
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and discharge power on the electrical, optical and morphological properties were investigated experimentally. The consideration on the effect of doping amounts of Al on the electrical and optical properties of ZnO thin film were also carried out. ZnO:Al films with the optimum growth conditions showed resistivity of $9.42{\times}10^{-4}\;{\Omeg}-cm$ and transmittance of 90.88% for 840nm in film thickness in the wavelength range of the visible spectrum.