• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.637-643
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• 2003

In order to improve the photoluminescent properties and crystallinity, Zn$_2$SiO$_4$:Mn, M(M=Cr, Ti) phosphors were synthesized by the sol-gel method. The willemite single phase was obtained at 110$0^{\circ}C$, which is lower temperature than that of the conventional solid-state reaction (130$0^{\circ}C$). The characteristics of fired samples were obtained by a 147 nm excitation source under VUV (Vacuum Ultraviolet). To investigation the effect of co-dopant, the content of Mn and the ratio of $H_2O$ to TEOS was fixed as 2 ㏖% and 36. 1, respectively. The highest emission intensity was obtained when the concentration of Cr and Ti was 0.1 ㏖% relative to Zn$_2$SiO$_4$:Mn. While the emission intensity decrease continuously the decay time improved as increased the Cr concentration. In the case of Ti added samples, however, the emission intensity increase up to 2 ㏖％ concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.44-47
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• 2012

The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.422-426
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• 2008

The effects of an addition of $ZrO_2$ on the microstructure and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. MgO + a 200 ppm $ZrO_2$ protective layer prepared by e-beam evaporation exhibited a secondary electron emission coefficient ($\gamma$) that was improved by 21% compared to that of a pure MgO protective layer. The relative density and Vickers hardness increased with a further addition of $ZrO_2$. These results suggest that the discharge properties and optical properties of MgO protective layers are closely related to the relative density and Vickers hardness. The good optical and electrical properties of $\gamma$, at 0.080, a grain size of $19\;{\mu}m$ and an optical transmittance of 91.93 % were obtained for the MgO + 200 ppm $ZrO_2$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• Korean Journal of Materials Research
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• v.14 no.9
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• pp.670-675
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• 2004

Glasses in the $Bi_{2}O_3-SiO_2-ZnO$ glasses system were examined as a potential replacement for lead-oxide glass frits with low firing temperature ($500\sim600^{\circ}C$) for the dielectric layer of a plasma display panel (PDP). The glasses were evaluated for glass transition temperature($T_{g}$) and thermal expansion coefficient(${\alpha}$). After forming transparent thick films by a screen-printing method, it was evaluated for the optical properties. The transmittance of thick films fired at $500-600^{\circ}C$ showed above $80\%$, which was not dependent on the firing temperature. As a result, many pores were observed at samples fired at low temperature, while the number of pores from samples prepared at high temperature decreased and the pores size increased.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.197-197
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• 2003

현재 PDP(Plasma Display Panel) 투명유전체층은 PbO 계열을 사용하고 있으나 제조공정 시 다량의 중금속 페기물이 방출됨에 따라 환경오염을 야기시킴으로 무연조성이며 저온소성이 가능한 저융점유리인 인산염계 유리에 대한 열적, 화학적, 광학적 특성에 대해 체계적인 연구가 진행되었다. 광학적 특성을 위 한 승온속도, 소성온도, 유지시간의 변화 그리고, 프릿 입도에 따른 광 투광성, 기포의 형성, 그리고 기포의 분포특성을 연구하였다. 열적특성은 DTA와 TMA를 이용하여 유리전이점(Tg) 및 선팽창계수(CTE)와 Littleton softning point (Ts)가 측정되었다. 광학적특성은 스크린프린팅법으로 후막 제조 후 소성하여 UV-visible spectrometer을 이용하여 300~800nm영역에서 투광성을 측정하였으며, FEG-SEM, AFM을 이용해 표면을 관찰하였다. 결과로써, Tg는 440-46$0^{\circ}C$ 와 CTE는 7~8.5$\times$$10^{-6}$K값을 보였고 높은 화학적 내구성과 60-80%의 광투과율을 나타내었다. 프릿의 미세화, 숭온속도의 감소는 기포의 생성을 줄이는데 효과를 보였으며, 그 결과 양호한 광투과율을 얻을 수 있었다. 이러한 결과에 따르면, P$_2$O$_{5}$-ZnO-RO 조성은 PDP용 투명유전체 조성으로써 기존의 PbO계열을 대체할만한 새로운 조성으로 고려된다.

• Proceedings of the KIPE Conference
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• 2004.07b
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• pp.551-555
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• 2004

The two-transformer full bridge (TTFB) PWM converter has two transformers which act as the output inductor as well as the main transformer, i.e. as the forward and the flyback transformer. Although the doubled leakage inductor of the TTFB makes it easier to achieve the zero-voltage switching (ZVS) of the lagging leg switch along the wide load range, it instigates a serious voltage ringing in the secondary rectifier diodes, which would require the dissipative snubber circuit, cause the serious power dissipation, and increase the voltage stress across those diodes. To overcome these problems, a, new lossless diode-clamp rectifier (LDCR) is employed as the output rectifier, which helps the voltage across rectifier diodes to be clamped on a half the output voltage $(V_o/2)$ or the output voltage $(V_o)$. Therefore, no dissipative snubber for rectifier diodes is needed and a high efficiency as well as low noise output voltage can be realized. The operations, analysis and design consideration of proposed converter are presented in this paper. To verify the validity of the proposed converter, experimental results from a 425W, 385-170Vdc prototype for the plasma display panel (PDP) sustaining power module (PSPM) are presented.

• Journal of the Korean Society for Heat Treatment
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• v.19 no.4
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• pp.219-224
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• 2006

Silver paste with low sintered temperature has been developed in order to apply electronic parts, such as bus electrode, address electrode in PDP (Plasma Display Panel) with large screen area. In this study, nano-sized silver particles with 10-30 nm were synthesized from silver nitrate ($AgNO_3$) solution by chemical reduction method and silver paste with low sintered temperature was prepared by mixing silver nanoparticles, conventional silver powder with the particle size 1.6 um and Pb-free frit. Conductive thick film from silver paste was fabricated by screen printing on alumina substrate. After firing at $540^{\circ}C$, the cross section and surface morphology of the thick films were analyzed by FE-SEM. Also, the sheet resistivity of the fired thick films was measured using the four-point technique.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.565-570
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• 2011

The $Eu^{3+}$ doped $Y(P_x,V_{1-x})O_4$ (0 ${\leq}$ x ${\leq}$ 1) phosphors were synthesized by solid-state and impregnation method and investigated as potential red-emitting phosphors for a plasma display panel(PDP). The optimal substitution proportion of P for V was determined to be 60 mol%, for $Y(P_x,V_{1-x})O_4$ doped with 8 mol% $Eu^{3+}$. The VUV PL spectra and SEM for the synthesized phosphors were measured and compared against those of a commercial red-emission phosphor. The $Y(P_x,V_{1-x})O_4$:$Eu^{3+}$ phosphors exhibited strong red at around 592, 618 and 698 nm. The emission intensity and particle size of the phosphors were controlled by preparation conditions.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.390-392
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• 2006

단일 서스테인 구동회로서 패널을 수평으로 이등 분할하고 직렬 연결하여 구동회로의 전류 스트레스를 저감하는 새로운 단일 에너지 회수 서스테인 구동회로를 제안한다. 기존의 단일 서스테인 구동회로는 +Vs 및 -Vs의 양극성 전원을 사용함에 따라 기존 구동회로에 비해 전류 스트레스는 그대로이면서 스위치 전압 스트레스가 두 배가 되어 회로 손실 및 발열이 높은 단점을 가지고 있다. 이를 개선하기 위해 제안하는 패널 분할 직렬 연결 단일 에너지 회수 서스테인 구동회로는 패널을 수평으로 이등 분할하고 하프 브리지 인버터를 각각 연결하여 구동 회로의 가스 방전 전류 및 패널 캐패시터의 변위 전류를 기존의 절반으로 줄여 스위치들의 전류 스트레스를 저감하게 된다. 또한 에너지 회수 회로는 능동소자로서 단 하나의 스위치와 단하나의 다이오드만을 사용하므로 그 구조가 단순하여 원가를 절감할 수 한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.738-746
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• 2004

Recently zinc oxide(ZnO) has emerged as one of the most promising transparent conducting films with a strong demand of low cost and high performance optoelectronic devices, ZnO film has many advantages such as high chemical and mechanical stabilities, and abundance in nature. In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for Plasma Display Pannel(PDP), aluminium doped zinc oxide films were deposited on Corning glass substrate by dc magnetron sputtering method. The effects of the discharge power and doping amounts of $Al_2$$O_3$ on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, positive and negative bias voltages were applied on the substrate, and the effect of bias voltage on the electrical properties of ZnO:Al thin film were also studied and discussed. Films with lowest resistivity of $4.3 \times 10 ^{-4} \Omega-cm$ and good transmittance of 91.46 % have been achieved for the films deposited at 1 mtorr, $400^{\circ}C$, 40 W, Al content of 2 wt% with a substrate bias of +30 V for about 800 nm in film thickness.