• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.119-125
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• 1995

Strained multiple quantum well(SMQW) PBH-DFB-LDs emitting at 1.55$\mu$m wavelength has been fabricated using OMVPE and LPE crystal growth tecnique. Using the SMQW active layer, a linewidty enhancement factor of 2.65 was obtained at lasing wavelength and consequnently, packaged 42 modules showed a very low average chirp of 0.44nm at 2.5Gbps NRZ direct modulation. The 77 devices showed average threshold current of 8.72mA and average slope efficiency of 0.181 mW/mA, and single longitudinal mode operation with SMSR larger than 30dB up to 5mW. Among the 77 devices, standard deviation of lasing wavelength of 3.57nm was obtained owing to a good crystal growth uniformity.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.4
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• pp.718-723
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• 2006

Optical module plays an important role in the construction of high speed communication network. Laser diode is a component of optical module, and its characteristics are dependent of temperature, so many researches are reported. In this paper, we proposed the electrical equivalent circuit of PBH-LD based on the rate equations. And, the two leakage paths exit outside the active region. One path is converted pn-diode and the other path is converted two transistors using npn-Tr and pnp-Tr. In order to reduce the leakage currents, we observed the dependence of carrier concentrations of current blocking layers using PSPICE simulator.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.6
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• pp.75-81
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• 1995

InGaAsP/InP uncooled LDs emitting at 1.3$\mu$m wavelength are of interest for several application of fiber-to-the-home, optical interconnection, long-haul high-bit-rate optical transmission systems, etc. The strain compensated PBH-MQW-LD employing 1.4% compressive strained well (${\lambda}=1.3{\mu}m$) and 0.7% tensile strained barrier (${\lambda}=1.12{\mu}m$) layers grown by low pressure metallicorganic vapor phase epitaxy was found to be low threshold current and stable temperature characteristics. The average threshold current of 5.6mA and average slope efficiency of 0.27mW/mA at room temperature were obtained for uncoated uncooled-LD.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.469-474
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• 2004

We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.2
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• pp.55-60
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• 2006

In order to suppress lasing oscillation and obtain high light power, We have proposed a novel SLD which is formed with a straight and tilted waveguide. The window region is used to suppress lasing oscillation and reduce the facet reflectivity. High power and low reflectivity is obtained by the straight and tilted waveguide. Based on the theoretical analysis, we have fabricated the SLD with the waveguide of 500 $\mu$m length and window region of 50 $\mu$m by LPE equipment. Through the measurements of optical characteristics, the output light power of 3 mW was obtained at the 150 mA CW injection current and 25$^{circ}C$. We have confirmed that the proposed SLD has a 0.8 dB spectrum ripple lower than 1 dB which is sufficiently low reflectivity for preventing lasing.

• ETRI Journal
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• v.13 no.4
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• pp.2-9
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• 1991

Buried-heterostructure lasers are more difficult to fabricate than weakly index guided or gain guided lasers. However, these strongly index guided structures are most suitable for a source of lightwave transmission systems. But, for conventional etched mesa buried heterostructure lasers, the regrowth of InP blocking layer is difficult and irreproducible. So, there are inevitable leakage currents flowing outside the active region resulting poor performance. To eliminate these problems, we used a planar buried heterostructure. As a results, the average threshold current was 28mA and the differential quantum efficiency was about 20% per facet for $1.3\mum$ GaInAsP/InP PBH-LD. The initial forward leakage current was not exceeding $1\muA$ and the reverse voltage for $-10\muA$ was -3V~-5V, these are improved figure of 1mA~10mA and -1V~-3V for EMBH laser diode. The chip modulation bandwidth was more than 2.4GHz for $1.5I_th$.