Browse > Article

A Fabrication of the Tilted Waveguide Structure SLD and Its Output Light Power Characteristics  

Choi Young-Kyu (신라대 공대 전자공학과)
Kim Girae (신라대 공대 전자공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.55, no.2, 2006 , pp. 55-60 More about this Journal
Abstract
In order to suppress lasing oscillation and obtain high light power, We have proposed a novel SLD which is formed with a straight and tilted waveguide. The window region is used to suppress lasing oscillation and reduce the facet reflectivity. High power and low reflectivity is obtained by the straight and tilted waveguide. Based on the theoretical analysis, we have fabricated the SLD with the waveguide of 500 $\mu$m length and window region of 50 $\mu$m by LPE equipment. Through the measurements of optical characteristics, the output light power of 3 mW was obtained at the 150 mA CW injection current and 25$^{circ}C$. We have confirmed that the proposed SLD has a 0.8 dB spectrum ripple lower than 1 dB which is sufficiently low reflectivity for preventing lasing.
Keywords
SLD; Rasing Oscillation; PBH-LD; LPE;
Citations & Related Records
연도 인용수 순위
  • Reference
1 K. Utaka, Y. Suematue, K. Kobayashi and H. Kawanishi, 'GaInAsP/InP Integrated Twin-Guide Lasers with First-order Distributed Bragg Reflectors at $1.3{\mu}m$ Wavelength', Jpn. J. Appl. Phys., Vol. 19, pp. L137-L140, 1980   DOI
2 B. W. Hakki, 'Mode Gain and Junction Current in GaAs under Lasing Conditions', J. Appl. Phys., Vol. 45, No. 1, pp. 288-294, January, 1974   DOI   ScienceOn
3 K. Mizuishi, M. Hirao, S. Tsuji, et al., 'Accelerated Aging Characteristics of InGaAsP/InP Buried Heterostructure Lasers Emitting at $1.3{\mu}m$', Jpn. J. Appl. Phys., Vol. 19, pp. 429-437, 1980   DOI
4 S. Matsumoto, R. Iga, Y. Kadota, M. Yamaomoto, M. Fukuda, K. Kishi and Y. Itaya 'Low Resistance $1.55{\mu}m$ InGaAsP/InP Semi-Insulating Buried Heterostructure Laser Diodes using a Multilayer Contact Structure', Electron. Lett., Vol. 31, No. 11, pp. 882-883, 1995   DOI   ScienceOn
5 H. Hatakeyama, K. Naniwae, 'Wavelength-Selectable Microarray Light Sources for S-, C-, and L-Band WDM Systems,' IEEE PHOTONICS TECHNOLOGY LETTERS, Vol. 15, No. 7, JULY, 2003   DOI   ScienceOn
6 T. Yamatoya, 'Multi-Wavelength Light Sources Using Spectrum Slicing Techniue,' ISOC 200, D-7, 2000
7 R. F. Dazarinov, W. A. Nordland, W. R. Wanger and H. Temkin, 'Near equailibrium LPE growth of $In_{1-x}Ga_xAs_yP_{1-y}$ lattice matched to InP', J. Crystal Growth., Vol. 60. pp. 235-238, 1982   DOI   ScienceOn
8 D. Marcuse, 'Reflection Loss of Laser Mode from Tilted End Mirror', J. Lightwave Tech., Vol. 7, No. 2, pp. 336-339, 1989   DOI   ScienceOn
9 K. Utaka, S. Akiba, K, Sakai and Y. Matsushima, 'Effect of Mirror Facets on Lasing Characteristics of Distributed Feedback InGaAsP/InP Laser Diodes at $1.5{\mu}m$ Range', IEEE. J. Quantum Electron., QE-20, pp. 236-245, 1984   DOI
10 A. Accard, J. Benoit and R. Vergnaud, 'LPE Growth of InP thin layer from super-cooled solution by two-phase technique', J. Crystal Growth., Vol. 54, pp. 235-238, 1982
11 I. Ladany and F. Z. Hawrylo, 'Comparison of single and two-phase LPE growth methods for InGaAsP/InP lasers and LEDs', J. Crystal Growth., Vol. 54, pp. 69-75, 1981   DOI   ScienceOn