• Title/Summary/Keyword: P.I.V

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ON THE SUPERSTABILITY OF SOME FUNCTIONAL INEQUALITIES WITH THE UNBOUNDED CAUCHY DIFFERENCE (x+y)-f(x)f(y)

  • Jung, Soon-Mo
    • Communications of the Korean Mathematical Society
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    • v.12 no.2
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    • pp.287-291
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    • 1997
  • Assume $H_i : R_+ \times R_+ \to R_+ (i = 1, 2)$ are monotonically increasing (in both variables), homogeneous mapping for which $H_1(tu, tv) = t^p(H_1(u, v) (p > 0)$ and $H_2(u, v)^{t^q} (q \leq 1)$ hold for $t, u, v \geq 0$. Using an idea from the paper of Baker, Lawrence and Zorzitto [2], the superstability problems of the functional inequalities $\Vert f(x+y) - f(x)f(y) \Vert \leq H_i (\Vert x \Vert, \Vert y \Vert)$ shall be investigated.

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Optimization of p-i-n amorphous silicon thin film solar cells using simulation (시뮬레이션을 통한 p-i-n 비정질 실리콘 박막 태양전지의 최적화)

  • Park, Seung-Man;Lee, Young-Suk;Jung, Sung-Wook;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.436-436
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    • 2009
  • 현재 상용화되어 있는 결정질 태양전지의 경우 높은 실리콘 가격으로 인해 저가화에 어려움을 격고 있다. 따라서 태양전지 저가화의 한 방법으로 박막태양전지가 주목을 받고 있다. P-I-N 구조의 박막태양전지에서 각 층의 thickness, activation energy, energy bandgap은 고효율 달성을 위한 중요한 요소이다. 본 논문에서는 박막태양전지 P-I-N layer의 가변을 통하여 고효율을 달성하기 위한 simulation을 수행하였다. 가변 조건으로는 p-layer의 thickness, activation energy 그리고 energy bandgap을 단계별로 변화시켰고 i-layer는 thickness를 n-layer는 thickness와 activation energy를 가변하여 최적의 조건을 찾아 분석하였다. 최종 simulation 결과 p-layer의 thickness 5nm, activation energy 0.3eV 그리고 energy bandgap 1.8eV에서, i-layer thickness 400nm, n-layer thickness 30nm, activation energy 0.2eV에서 최고 효율 11.08%를 달성하였다.

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ON PATHOS BLOCK LINE CUT-VERTEX GRAPH OF A TREE

  • Nagesh, Hadonahalli Mudalagiraiah
    • Communications of the Korean Mathematical Society
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    • v.35 no.1
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    • pp.1-12
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    • 2020
  • A pathos block line cut-vertex graph of a tree T, written P BLc(T), is a graph whose vertices are the blocks, cut-vertices, and paths of a pathos of T, with two vertices of P BLc(T) adjacent whenever the corresponding blocks of T have a vertex in common or the edge lies on the corresponding path of the pathos or one corresponds to a block Bi of T and the other corresponds to a cut-vertex cj of T such that cj is in Bi; two distinct pathos vertices Pm and Pn of P BLc(T) are adjacent whenever the corresponding paths of the pathos Pm(vi, vj) and Pn(vk, vl) have a common vertex. We study the properties of P BLc(T) and present the characterization of graphs whose P BLc(T) are planar; outerplanar; maximal outerplanar; minimally nonouterplanar; eulerian; and hamiltonian. We further show that for any tree T, the crossing number of P BLc(T) can never be one.

Design of SCR-Based ESD Protection Circuit for 3.3 V I/O and 20 V Power Clamp

  • Jung, Jin Woo;Koo, Yong Seo
    • ETRI Journal
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    • v.37 no.1
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    • pp.97-106
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    • 2015
  • In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

Leakage Current and Threshold Voltage Characteristics of a-Si:H TFT Depending on Process Conditions (a-Si:H TFT의 누설전류 및 문턱전압 특성 연구)

  • Yang, Kee-Jeong;Yoon, Do-Young
    • Korean Chemical Engineering Research
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    • v.48 no.6
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    • pp.737-740
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    • 2010
  • High leakage current and threshold voltage shift(${\Delta}Vth$) are demerits of a-Si:H TFT. These characteristics are influenced by gate insulator and active layer film quality, surface roughness, and process conditions. The purpose of this investigation is to improve off current($I_{off}$) and ${\Delta}V_{th}$ characteristics. Nitrogen-rich deposition condition was applied to gate insulator, and hydrogen-rich deposition condition was applied to active layer to reduce electron trap site and improve film density. $I_{off}$ improved from 1.01 pA to 0.18 pA at $65^{\circ}C$, and ${\Delta}V_{th}$ improved from -1.89 V to 1.22 V.

Facility Location Problem for Blood Logistics Center (혈액 물류센터 위치 선정 문제)

  • Lee, Sang-Un
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.12 no.2
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    • pp.135-143
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    • 2012
  • This paper suggests the optimal blood distribution center algorithm that satisfies the minimum total transportation cost and within the allowable distribution time $T^*$. Zhang and Yang proposes shifting the location of each point that has less than the average distance of two maximum distance points from each point. But they cannot decide the correct facility location because they miscompute the shortest distance. This algorithm computes the shortest distance $l_{ij}$ from one area to another areas. Then we select the $v_i$ area to thecandidate distribution center location such that $_{max}l_{ij}{\leq}L^*$ and the $v_i$ such that $l_{ij}-L^*$ area that locates in ($v_i,v_k$) and ($v_j,v_l$) from $P_{ij}=v_i,v_k,{\cdots},v_l,v_j$ path and satisfies the $_{max}l_{ij}{\leq}L^*$ condition. Finally, we decide the candidate distribution area that has minimum transportation cost to optimal distribution area.

Inhibition of K+ outward currents by linopirdine in the cochlear outer hair cells of circling mice within the first postnatal week

  • Kang, Shin Wook;Ahn, Ji Woong;Ahn, Seung Cheol
    • The Korean Journal of Physiology and Pharmacology
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    • v.21 no.2
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    • pp.251-257
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    • 2017
  • Inhibition of $K^+$ outward currents by linopirdine in the outer hair cells (OHCs) of circling mice (homozygous (cir/cir) mice), an animal model for human deafness (DFNB6 type), was investigated using a whole cell patch clamp technique. Littermate heterozygous (+/cir) and ICR mice of the same age (postnatal day (P) 0 -P6) were used as controls. Voltage steps from -100 mV to 40 mV elicited small inward currents (-100 mV~-70 mV) and slow rising $K^+$ outward currents (-60 mV~40 mV) which activated near -50 mV in all OHCs tested. Linopirdine, a known blocker of $K^+$ currents activated at negative potentials ($I_{K,n}$), did cause inhibition at varying degree (severe, moderate, mild) in $K^+$ outward currents of heterozygous (+/cir) or homozygous (cir/cir) mice OHCs in the concentration range between 1 and $100{\mu}m$, while it was apparent only in one ICR mice OHC out of nine OHCs at $100{\mu}m$. Although the half inhibition concentrations in heterozygous (+/cir) or homozygous (cir/cir) mice OHCs were close to those reported in $I_{K,n}$, biophysical and pharmacological properties of $K^+$ outward currents, such as the activation close to -50 mV, small inward currents evoked by hyperpolarizing steps and TEA sensitivity, were not in line with $I_{K,n}$ reported in other tissues. Our results show that the delayed rectifier type $K^+$ outward currents, which are not similar to $I_{K,n}$ with respect to biophysical and pharmacological properties, are inhibited by linopirdine in the developing (P0~P6) homozygous (cir/cir) or heterozygous (+/cir) mice OHCs.

STABLE SPLITTINGS OF BG FOR GROUPS WITH PERIODIC COHOMOLOGY AND UNIVERSAL STABLE ELEMENTS

  • Lim, Pyung-Ki
    • Bulletin of the Korean Mathematical Society
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    • v.26 no.2
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    • pp.109-114
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    • 1989
  • This paper deals with the classifying spaces of finite groups. To any finite group G we associate a space BG with the property that .pi.$_{1}$(BG)=G, .pi.$_{i}$ (BG)=0 for i>1. BG is called the classifying space of G. Consider the problem of finding a stable splitting BG= $X_{1}$$^{V}$ $X_{1}$$^{V}$..$^{V}$ $X_{n}$ localized at pp. Ideally the $X_{i}$ 's are indecomposable, thus displaying the homotopy type of BG in the simplest terms. Such a decomposition naturally splits $H^{*}$(BG). The main purpose of this paper is to give the classification theorem in stable homotopy theory for groups with periodic cohomology i.e. cyclic Sylow p-subgroups for p an odd prime and to calculate some universal stable element. In this paper, all cohomology groups are with Z/p-coefficients and p is an odd prime.prime.

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Irradiation Dependance of I-V Characteristics of Photovoltaic System (태양광 시스템에서 전압-전류 특성의 일사량 의존성)

  • Park, Se-Joon;Hwang, Jun-Won;Choi, Yong-Sung;Lee, Kyung-Sup
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.58 no.4
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    • pp.521-525
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    • 2009
  • Solar, as an ideal renewable energy, has inexhaustible, clean and safe characteristics. However, solar energy is an extreme intermittent and inconstant energy source. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current vary with the irradiation, it is necessary to study the characteristics of photovoltaic I-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V according to the irradiation. The results show that the DC current of the photovoltaic system are increased along with the increasing values of irradiation.