• 센서학회지
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• 제32권4호
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• pp.238-245
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• 2023

0.75(Bi_1/2Na_1/2)TiO₃-0.25SrTiO₃ (BNT-25ST) ceramics with high densities were successfully prepared at a sintering temperature of 1,000℃ by adding a mixture of 1 mol% CuO and 0.5 mol% Na₂CO₃ or 0.5 mol% CuO and 0.25 mol% Na₂CO₃. Double polarization-electric field (P-E) hysteresis curves and sprout-shaped bipolar strain-electric field (S-E) hysteresis curves with small negative strains were observed in the pristine and CuO-added BNT-25ST ceramics whereas the Na₂CO₃-added sample showed similar P-E and S-E curves to a typical ferroelectric. The pristine BNT-25ST ceramics showed an extremely large strain and a large-signal piezoelectric strain constant (d₃₃^*): 0.287 % at 80 kV/cm and 850 pm/V at 20 kV/cm. Similar values, 0.248 % at 80 kV/cm and 655 pm/V at 20 kV/cm, were obtained in the CuO-added sample. However, the pristine and CuO-added samples showed large hysteresis in unipolar S-E curves at an electric field of less than 20 kV/cm. The Na₂CO₃-added sample showed smaller values of the strain and d₃₃^* but displayed a linear change and small hysteresis in the unipolar S-E curve. The co-added sample with CuO and Na₂CO₃ displayed intermediate P-E and S-E hysteresis curves.

• 충청수학회지
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• 제28권2호
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• pp.251-259
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• 2015

Let $\mathbb{F}^d_q$ be a d-dimensional vector space over a finite field $\mathbb{F}^d_q$ with q elements. We endow the space $\mathbb{F}^d_q$ with a normalized counting measure dx. Let ${\sigma}$ be a normalized surface measure on an algebraic variety V contained in the space ($\mathbb{F}^d_q$, dx). We define the restricted averaging operator AV by $A_Vf(X)=f*{\sigma}(x)$ for $x{\in}V$, where $f:(\mathbb{F}^d_q,dx){\rightarrow}\mathbb{C}$: In this paper, we initially investigate $L^p{\rightarrow}L^r$ estimates of the restricted averaging operator AV. As a main result, we obtain the optimal results on this problem in the case when the varieties V are any nondegenerate algebraic curves in two dimensional vector spaces over finite fields. The Fourier restriction estimates for curves on $\mathbb{F}^2_q$ play a crucial role in proving our results.

• Journal of Astronomy and Space Sciences
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• 제1권1호
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• pp.55-65
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• 1984

A total of 618 photoelectric observations (302 in yellow and 316 in bule) is made in 1982 at the Yonsei University Observatory. Except that of the secondary eclipse the homogeneous coverage of observations successfully secured B, V, and B-V light curves. Enhanced distortions in the light curves are appeared at the phases aroung $0.^P1$, which supports the wave-like migration period of 9.7 years(Rodono 1981). One epoch time of the primary minimum was made by combining the observations in three nights. This minimum time shows that the O-C values are still decreasing and there seems to indication of increasing. B and V light curves of the primary minimum are in strong asymmetry which show less luminous in the third and fourth contacts compared to those of the first and second ones. This asymmetry may be as a result of the reflection of the wave minimum at $0.^P1$, and B-V curve also shows asymmetry, redder at the third contact than the second one by about $0.^m04$. This color difference apperature distribution on the surface of cooler, larger component(KO IV star).

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2001년도 추계종합학술대회
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• pp.644-647
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• 2001

이 연구에서는 P-MOS 커패시터에 Co $u^{60}$-${\gamma}$선을 조사한 후 조사선량 및 산화막 두께에 따른 전하의 거동을 고찰하고자 1[MHz]의 고주파 신호에서 정전용량-전압(C-V) 특성 및 유전손실계수-전압(D-V)특성을 측정하였다. C-V 특성에서 플랫밴드 전압과 문턱전압을 구하여 이들 파라메타와 D-V 특성의 피크와의 관련성을 검토하였다. C-V 특성이 P-MOS 커패시터의 정상상태의 전하의 거동 및 계면 상태특성을 해석하기가 편리하고 D-V 특성은 C-V 특성보다 산화막 내부의 공간전하분포와 계면상태의 밑도 등을 더 명확하게 파악할 수 있으며 산화막내 캐리어의 전도철상에 관한 미시적 전하 거동의 고찰에도 편리함이 확인되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.51-54
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• 1996

This paper reports the studies of the inversion layer mobility in p-channel Si MOSFET's under hot-carrier degradated condition. The validity of relationship of hot carrier degradations between the surface effective mobility and field effect mobility and are examined. The effective mobility(${\mu}$$\_$eff/) is derived from the channel conductances, while the field-effect mobility(${\mu}$$\_$FE/) is obtained from the transconductance. The characteristics of mobility curves can be divided into the 3 parts of curves. It was reported that the mobility degradation is due to phonon scattering, coulombic scattering and surface roughness. We are measured the mobility slope in curves with DC-stress [V$\_$g/=-3.1v]. It was found that the mobility(${\mu}$$\_$eff/ and ${\mu}$$\_$FE/) of p-MOSFET's was increased by increasing stress time and decreasing channel length. Because of the increasing stress time and increasing V$\_$g/ is changed oxide reliability and increased vertical field.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.461-464
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• 1987

With the fabrication of Al-$Al_2O_3$-n(p) type Si devices, the analysis and measurement of various characteristics, this study presented the electric physical property theory for the charge distribution of MAS device $Al_2O_3$ films, and inquired out the devices available. In order to study them, Al-(450A)$Al_2O_3$-n(p) type Si was the main objects in the study. They were examined through carrier injection, C-V curves of devices on time, ${\Delta}V_{FB}$-t curves, I-V curves and $Al_2O_3$ film's breakdown characteristics.

• 마이크로전자및패키징학회지
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• 제12권3호
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• pp.219-226
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• 2005

When a ferroelectric film has an inhomogeneous distribution of charged defects, a voltage shift in the polarization curve is induced by the internal field generated in the film. The direction and the magnitude of voltage shift in the P-V hysteresis curves obtained by the Sawyer-Tower method are different from those obtained by the virtual ground method. In this study, the asymmetric behavior in the P-V hysteresis curves of inhomogeneous ferroelectric films was investigated with a physical model and the polarization curves obtained by the Sawyer-Tower and the virtual ground methods are compared.

• 한국진공학회지
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• 제9권2호
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• pp.136-143
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• 2000

RF magnetron sputtering법으로 $SrBi_2Ta_2O_9$ (SBT)박막을 상온에서 p-type Si(100) 기판위에 증착하여 DRO 강유전체 메모리(destructive read out ferroelectric random access memory)에 사용되는 강유전체막으로 Pt/SBT/Pt/Ti/$SiO_2$/Si (MFM)구조의 응용가능성을 확인하였다. 구조적인 특징들이 열처리 시간의 변화와 Ar/$O_2$의 가스 유량비의 변화에 따라서 XRD(x-ray diffractometer)에 의해 관찰되었으며 표면 특성은 FE-SEM(field emission scanning electron microscopy)에 의해서 관찰하고 박막의 전기적 특성들은 P-V(polarization-voltage measurement)와 I-V(current-voltage measurement)를 사용하여 관찰하였다. 스퍼터링 증착시 Ar/$O_2$의 가스 유량비는 1:4에서 4:1까지 변화 시켰고 SBT박막은 상온에서 증착시켰다. XRD 측정시 박막들은 SBT의 (105), (110) peak들을 나타내었다. 상온에서 증착시킨 박막은 1시간, 2시간 동안 산소 분위기에서 $800^{\circ}C$ 열처리를 하여 결정화 시켰다. SBT 박막의 P-V곡선은 이력 곡선의 모양을 갖추었으며 비대칭적인 강유전체 특성을 나타내었다. Ar/$O_2$ 가스유량비가 1 : 1, 2 : 1인 경우에 박막의 누설 전류밀도 값이 제일 좋았으며, 그 값은 3V 5V 7V에서 각각 $3.11\times10^{-8} \textrm{A/cm}^2$, $5\times10^{-8}\textrm{A/cm}^2$, $7\times10^{-8}\textrm{A/cm}^2$ 이었다. 열처리 시간을 2시간으로 증가시킨 후, 그들의 전기적 특성과 결정화특성이 개선됨을 확인하였다. AES 분석 및 EPMA분석으로 SBT박막의 깊이 분포 및 조성을 확인하였다.

• 한국산림과학회지
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• 제80권2호
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• pp.210-219
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• 1991

P-V 곡선법(曲線法)을 적용(適用)하여 20종(種)의 낙엽활엽수(落葉闊葉樹)에 대한 내건성진단(耐乾性診斷)을 하였다. 엽(葉)의 수분특성인자(水分特性因子) 중 내건성판별(耐乾性判別)에 적합(適合)한 인자(因子)는 최대포수시(最大飽水時)의 삼투(滲透)포텐셜 (${\Psi}_0{^{sat}}$), 초기원형질분리점(初期原形質分離點)의 삼투(滲透)포텐셜(${\Psi}_0{^{tlp}}$), 세포막(細胞膜)의 최대탄성계수(最大彈性係數)($E_{max}$), 초기원형질분리점(初期原形質分離點)의 상대함수율(相對含水率)($RWC^{tlp}$)였으며, 그 밖에 상대함수율(相對含水率)(FWC)와 워터포텐셜(${\Psi}_L$)과의 관계, 팽압(膨壓)($P_{vat}$)과 ${\Psi}_L$과의 관계, H$\ddot{o}$fler diagram등의 그림을 내건성진단(耐乾性診斷)에 사용하였다. 이와같은 수분특성인자(水分特性因子)로 고찰(考察)할 때 물푸레나무, 상수리나무, 졸참나무, 갈참나무, 현사시등은 비교적 내건성(耐乾性)이 높은 수종(樹種)으로, 들메나무, 자작나무, 이태리포플러, 음나무, 서어나무, 까치박달, 산벚나무, 개벚나무, 층층나무등은 비교적 내건성(耐乾性)이 약(弱)한 수종(樹種)으로, 그리고 신갈나무, 고로쇠, 복자기, 당단풍, 느릅나무, 느티나무등은 중간(中間) 수종(樹種)으로 판별(判別)되었다.

• Journal of Power Electronics
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• 제19권5호
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• pp.1259-1269
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• 2019

PV system performance is dependent on different irradiations and temperature values in addition to the capability of the employed PV inverter / maximum power point tracker (MPPT) circuit or algorithm. Therefore, it would be appropriate to use a PV simulator capable of producing identical repeatable conditions regardless of the weather to evaluate the performance of inverter / MPPT circuits and algorithms. In accordance with this purpose, a photovoltaic (PV) array simulator is presented in this paper. The simulator is designed to generate current-voltage (I-V) and power-voltage (P-V) curves of a PV panel. Series connected cascaded modules constitute the basic part of the simulator. This feature also allows for the modeling of PV arrays since the number of modules can be increased and high voltage values can be reached with the simulator. In addition, the curves obtained at the simulator output become similar to the actual curves of sample PV panels with an increase in the number of modules. In order to show the validity of the proposed simulator, it was simulated for various situations such as panels under full irradiance and partial shading conditions. After completing simulations, experiments were realized to support the simulation study. Both simulation and experimental results show that the proposed simulator will be very useful for researchers to carry out PV studies under laboratory conditions.