Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)
- Volume 12 Issue 3 Serial No. 36
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- Pages.219-226
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- 2005
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- 1226-9360(pISSN)
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- 2287-7525(eISSN)
Effects of Asymmetric Distribution of Charged Defects on the Hysteresis Curves of Ferroelectric Capacitors
- Lee Kang-Woon (Department of Materials Science and Engineering, KAIST) ;
- Kim Yong-Il (Department of Materials Science and Engineering, KAIST) ;
- Lee Won-Jong (Department of Materials Science and Engineering, KAIST)
- Published : 2005.09.01
Abstract
When a ferroelectric film has an inhomogeneous distribution of charged defects, a voltage shift in the polarization curve is induced by the internal field generated in the film. The direction and the magnitude of voltage shift in the P-V hysteresis curves obtained by the Sawyer-Tower method are different from those obtained by the virtual ground method. In this study, the asymmetric behavior in the P-V hysteresis curves of inhomogeneous ferroelectric films was investigated with a physical model and the polarization curves obtained by the Sawyer-Tower and the virtual ground methods are compared.