Effects of Asymmetric Distribution of Charged Defects on the Hysteresis Curves of Ferroelectric Capacitors

  • Lee Kang-Woon (Department of Materials Science and Engineering, KAIST) ;
  • Kim Yong-Il (Department of Materials Science and Engineering, KAIST) ;
  • Lee Won-Jong (Department of Materials Science and Engineering, KAIST)
  • Published : 2005.09.01

Abstract

When a ferroelectric film has an inhomogeneous distribution of charged defects, a voltage shift in the polarization curve is induced by the internal field generated in the film. The direction and the magnitude of voltage shift in the P-V hysteresis curves obtained by the Sawyer-Tower method are different from those obtained by the virtual ground method. In this study, the asymmetric behavior in the P-V hysteresis curves of inhomogeneous ferroelectric films was investigated with a physical model and the polarization curves obtained by the Sawyer-Tower and the virtual ground methods are compared.

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