A Study for Electrical Characteristics of MAS (Metal-$Al_2O_3$-Si) Structure

MAS (Metal-$Al_2O_3$-Si) 구조에 있어서 전기적 특성에 관한 연구

  • Park, Sung-Hee (Dept. of Electronics Engineering, DanKook University) ;
  • Lee, Dong-Yeob (Dept. of Electronics Engineering, DanKook University) ;
  • Chang, Ji-Keun (Dept. of Electronics Engineering, DanKook University) ;
  • Lee, Young-Hee (Dept. of Electronics Engineering, DanKook University)
  • 박성희 (단국대학교 전자공학과) ;
  • 이동엽 (단국대학교 전자공학과) ;
  • 장지근 (단국대학교 전자공학과) ;
  • 이영희 (단국대학교 전자공학과)
  • Published : 1987.07.03

Abstract

With the fabrication of Al-$Al_2O_3$-n(p) type Si devices, the analysis and measurement of various characteristics, this study presented the electric physical property theory for the charge distribution of MAS device $Al_2O_3$ films, and inquired out the devices available. In order to study them, Al-(450A)$Al_2O_3$-n(p) type Si was the main objects in the study. They were examined through carrier injection, C-V curves of devices on time, ${\Delta}V_{FB}$-t curves, I-V curves and $Al_2O_3$ film's breakdown characteristics.

Keywords