• Journal of Sensor Science and Technology
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• v.32 no.4
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• pp.238-245
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• 2023

0.75(Bi_1/2Na_1/2)TiO₃-0.25SrTiO₃ (BNT-25ST) ceramics with high densities were successfully prepared at a sintering temperature of 1,000℃ by adding a mixture of 1 mol% CuO and 0.5 mol% Na₂CO₃ or 0.5 mol% CuO and 0.25 mol% Na₂CO₃. Double polarization-electric field (P-E) hysteresis curves and sprout-shaped bipolar strain-electric field (S-E) hysteresis curves with small negative strains were observed in the pristine and CuO-added BNT-25ST ceramics whereas the Na₂CO₃-added sample showed similar P-E and S-E curves to a typical ferroelectric. The pristine BNT-25ST ceramics showed an extremely large strain and a large-signal piezoelectric strain constant (d₃₃^*): 0.287 % at 80 kV/cm and 850 pm/V at 20 kV/cm. Similar values, 0.248 % at 80 kV/cm and 655 pm/V at 20 kV/cm, were obtained in the CuO-added sample. However, the pristine and CuO-added samples showed large hysteresis in unipolar S-E curves at an electric field of less than 20 kV/cm. The Na₂CO₃-added sample showed smaller values of the strain and d₃₃^* but displayed a linear change and small hysteresis in the unipolar S-E curve. The co-added sample with CuO and Na₂CO₃ displayed intermediate P-E and S-E hysteresis curves.

• Journal of the Chungcheong Mathematical Society
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• v.28 no.2
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• pp.251-259
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• 2015

Let $\mathbb{F}^d_q$ be a d-dimensional vector space over a finite field $\mathbb{F}^d_q$ with q elements. We endow the space $\mathbb{F}^d_q$ with a normalized counting measure dx. Let ${\sigma}$ be a normalized surface measure on an algebraic variety V contained in the space ($\mathbb{F}^d_q$, dx). We define the restricted averaging operator AV by $A_Vf(X)=f*{\sigma}(x)$ for $x{\in}V$, where $f:(\mathbb{F}^d_q,dx){\rightarrow}\mathbb{C}$: In this paper, we initially investigate $L^p{\rightarrow}L^r$ estimates of the restricted averaging operator AV. As a main result, we obtain the optimal results on this problem in the case when the varieties V are any nondegenerate algebraic curves in two dimensional vector spaces over finite fields. The Fourier restriction estimates for curves on $\mathbb{F}^2_q$ play a crucial role in proving our results.

• Journal of Astronomy and Space Sciences
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• v.1 no.1
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• pp.55-65
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• 1984

A total of 618 photoelectric observations (302 in yellow and 316 in bule) is made in 1982 at the Yonsei University Observatory. Except that of the secondary eclipse the homogeneous coverage of observations successfully secured B, V, and B-V light curves. Enhanced distortions in the light curves are appeared at the phases aroung $0.^P1$, which supports the wave-like migration period of 9.7 years(Rodono 1981). One epoch time of the primary minimum was made by combining the observations in three nights. This minimum time shows that the O-C values are still decreasing and there seems to indication of increasing. B and V light curves of the primary minimum are in strong asymmetry which show less luminous in the third and fourth contacts compared to those of the first and second ones. This asymmetry may be as a result of the reflection of the wave minimum at $0.^P1$, and B-V curve also shows asymmetry, redder at the third contact than the second one by about $0.^m04$. This color difference apperature distribution on the surface of cooler, larger component(KO IV star).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.644-647
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• 2001

The investigations were discussed on the radiation effects of the electrical properties to the p-type MOS capacitors, which were irradiated by cobalt-60 gamma ray sources. The characteristics of capacitance-bias voltage(C-V) and of dielectric dissipation tarter-bias voltage(D-V) on the capacitors were measured at 1 [MHz] frequency. The microscopic behaviors of spate charges in oxide and silicon-silicon dioxide(Si- $SiO_2$) interface were investigated from the experimental data. The C-V characteristics are statical and convenient for the evaluation of the steady state behavior of carriers and interface states characteristics. While, the distribution and magnitude of space charges in oxide can be found out accurately on the $V_{dp}$ in D-V curves. The density of interface states can be deduced with ease from the magnitude of D-peak at depletion state. Thus, it is also concluded that the D-V curves are more useful and easier than conventional C-V curves for analysis of the microscopic and dynamic behavior of carriers in oxide and Si- $SiO_2$interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.51-54
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• 1996

This paper reports the studies of the inversion layer mobility in p-channel Si MOSFET's under hot-carrier degradated condition. The validity of relationship of hot carrier degradations between the surface effective mobility and field effect mobility and are examined. The effective mobility(${\mu}$$\_$eff/) is derived from the channel conductances, while the field-effect mobility(${\mu}$$\_$FE/) is obtained from the transconductance. The characteristics of mobility curves can be divided into the 3 parts of curves. It was reported that the mobility degradation is due to phonon scattering, coulombic scattering and surface roughness. We are measured the mobility slope in curves with DC-stress [V$\_$g/=-3.1v]. It was found that the mobility(${\mu}$$\_$eff/ and ${\mu}$$\_$FE/) of p-MOSFET's was increased by increasing stress time and decreasing channel length. Because of the increasing stress time and increasing V$\_$g/ is changed oxide reliability and increased vertical field.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.461-464
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• 1987

With the fabrication of Al-$Al_2O_3$-n(p) type Si devices, the analysis and measurement of various characteristics, this study presented the electric physical property theory for the charge distribution of MAS device $Al_2O_3$ films, and inquired out the devices available. In order to study them, Al-(450A)$Al_2O_3$-n(p) type Si was the main objects in the study. They were examined through carrier injection, C-V curves of devices on time, ${\Delta}V_{FB}$-t curves, I-V curves and $Al_2O_3$ film's breakdown characteristics.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.219-226
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• 2005

When a ferroelectric film has an inhomogeneous distribution of charged defects, a voltage shift in the polarization curve is induced by the internal field generated in the film. The direction and the magnitude of voltage shift in the P-V hysteresis curves obtained by the Sawyer-Tower method are different from those obtained by the virtual ground method. In this study, the asymmetric behavior in the P-V hysteresis curves of inhomogeneous ferroelectric films was investigated with a physical model and the polarization curves obtained by the Sawyer-Tower and the virtual ground methods are compared.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.136-143
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• 2000

$SrBi_2Ta_2O_9;(SBT)$ films were deposited on p-type Si(100) at room temperature by rf magnetron sputtering method to confirm the possibility of application of $Pt/SBT/Pt/Ti/SiO_2/Si$ structure (MFM) for destructive read out ferroelectric RAM (random access memory). Their structural characteristics with the various annealing times and Ar/$O_2$ gas flow ratios in sputtering were observed by XRD (X-ray diffractometer) and the surface morphologies were observed by FE-SEM (field emission scanning electron microscopy), and their electrical properties were observed by P-V (polarization-voltage measurement) and I-V (current-voltage measurement). The Ar/$O_2$ gas flow ratios of sputtering gas were changed from 1 : 4 to 4 : 1 and SBT thin films were deposited at room temperature. The films show (105), (110) peaks of SBT by XRD measurement. SBT thin films deposited at room temperature were crystallized by furnace annealing at 80$0^{\circ}C$ in oxygen atmosphere during either one hour or two hours. Among their electrical properties, P-V curves showed shaped hysteresis curves, but the SBT thin films showed the asymmetric ferroelectric properties in P-V curves. When Ar/$O_2$ gas flow ratios are 1 : 1, 2: 1, the leakage current density values of SBT thin films are good, those values of 3 V, 5 V, and 7 V are respectively $3.11\times10^{-8} \textrm{A/cm}^2$, $5\times10^{-8}\textrm{A/cm}^2$, $7\times10^{-8}\textrm{A/cm}^2$.After two hours of annealing time, their electrical properties and crystallization are improved.

• Journal of Korean Society of Forest Science
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• v.80 no.2
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• pp.210-219
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• 1991

This study is to diagnose the drought tolerance of twenty broad-leaved tree species by the pressure-volume(P-V) curves. As for the diagnosis of drought tolerance, the valuable water relations parameters obtained from P-V curves are the osmotic potential at full turgor, ${\Psi}_0{^{sat}}$, osmotic potential at incipient plasmolysis, ${\Psi}_0{^{tlp}}$, maximum bulk modulus of elasticity, $E_{max}$, and relative water content at incipient plasmolysis, $RWC^{tlp}$. Also, the figures related to the diagnosis of drought tolerance are the free water content (FWC) versus leaf water potential(${\Psi}_L$), volume-averaged turgor pressure ($P_{vat}$) versus leaf water potential (${\Psi}_L$), and H$\ddot{o}$fler diagram. In this study, the relatively high drought tolerant species are Fraxinus rhynchophylla, Quercus acutissima, Quercus serrata, Quercus aliena, and Populus alba${\times}$glandulosa ; the relatively low drought tolerant species are Fraxinus mandshurica, Betula platyphylla var. japonica, Populus euramericana, Kalopanax pictum, Carpinus loxiflora, Carpinus cordata, Prunus sargentii, Prunus leveilleana, and Cornus controversa ; medium species are Quercus mongolica, Acer mono, Acer triflorum, Acer pseudo-sieboldianum, Ulmus davidiana, and Zelkova serrata.

• Journal of Power Electronics
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• v.19 no.5
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• pp.1259-1269
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• 2019

PV system performance is dependent on different irradiations and temperature values in addition to the capability of the employed PV inverter / maximum power point tracker (MPPT) circuit or algorithm. Therefore, it would be appropriate to use a PV simulator capable of producing identical repeatable conditions regardless of the weather to evaluate the performance of inverter / MPPT circuits and algorithms. In accordance with this purpose, a photovoltaic (PV) array simulator is presented in this paper. The simulator is designed to generate current-voltage (I-V) and power-voltage (P-V) curves of a PV panel. Series connected cascaded modules constitute the basic part of the simulator. This feature also allows for the modeling of PV arrays since the number of modules can be increased and high voltage values can be reached with the simulator. In addition, the curves obtained at the simulator output become similar to the actual curves of sample PV panels with an increase in the number of modules. In order to show the validity of the proposed simulator, it was simulated for various situations such as panels under full irradiance and partial shading conditions. After completing simulations, experiments were realized to support the simulation study. Both simulation and experimental results show that the proposed simulator will be very useful for researchers to carry out PV studies under laboratory conditions.