• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1547-1549
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• 1996

The electrical and optical switching characteristics of gold-doped silicon p-i-n diodes have been investigated. The device shows a dark switching voltage of about 500 V. The switching voltage decreases rapidly when the illumination level is increased. The differential sensitivity of optical gating over linear region is $d(V_{Th}/V_{Tho})/dP_{Ph}$=0.25/uW. The turn-on delay time and the turn-on rise time decrease with increasing optical pulse power. The turn-off delay and the fall time are negligible.

• Journal of Fashion Business
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• v.17 no.6
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• pp.111-124
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• 2013

The purpose of this research was to conduct a comparison analysis of color in the characteristics and image of Korea/China/Japan airline uniforms. Research subjects for this research included 19 Korean, Chinese and Japanese airlines servicing the Incheon International Airport in South Korea. The analysis methods are based on the Munsell Color Order System and PCCS (Practical Color Coordinate System) tone classification in order to examine the color characteristics. For the color image analysis, the present research performed a positioning on Shigenobu Kobayashi's color images scale with adjectives in order to compare the resulting differences. As a result of the analysis, this research discovered the following; First, achromatic colors were found to be used most frequently in flight attendant uniforms of Korea/China/Japan. In Korean flight attendant uniforms, YR/Y, GY and B/PB/P; in Chinese, R/PB, RP, YR/Y/GY and BG/P; in Japanese, RP, R/P/PB and Y/BG were found in order. As for the main uniform colors, Korean flight attendant uniforms were found to be in the colors YR, and R/GY/B/P; Chinese flight attendant uniforms, R, PB, and P/B; and Japanese flight attendant uniforms, R, BG, B, RP and N. Second, Korean flight attendant uniforms used W and It most frequently; China flight attendant uniforms, W; and Japanese flight attendant uniforms, W and v. Regarding the main colors, Korean flight atteddant uniforms used lt/g and v/p; Chinese flight attendant uniforms, v, dp and s/d/dkg; and Japanese flight attendant uniforms, v/dkg and Bk. Third, after positioning each country's uniform color combination bars on the Kobayashi image scale, Korean flight attendant uniforms showed classic images along with casual/pretty/elegant/chic images; Chinese flight attendant uniforms displayed, casual images as well as, dynamic/gorgeous/chic/cool casual/dandy images; and finally, Japanese flight attendant uniforms converyed dandy images along with casual/gorgeous images. This research findings indicate that Korea/China/Japan airlines' flight attendant uniforms seek for differentiated image establishment by reflecting their own CIs and unique national cultures in the uniform color marketing.

• Journal of Environmental Health Sciences
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• v.29 no.2
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• pp.94-102
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• 2003

This study was carried out to investigated the distribution and characteristics of Vibrio spp. isolated from fish and shellfish, seawater and brackish water samples collected from Pohang, Uljin, Yeongduk and Gyeongju in Gyeongbuk Province from April 2000 to October 2000. Total 155 strains of genus Vibrio were isolated from 439 collected samples, and numbers of isolated strains of V. parahaemolyticus and V. vulnificus were 140 and 15, respectively. The isolation rate from the samples collected in Pohang was the highest as 41.5% (76 strains), and wat the highest as 71.4% (30 strains) in brackish water, and was the highest as 55.7% (34 strains) in August. And the optimal pH, temperature, and NaCl concentration for growth of V. parahaemolyticus and V. cholerae were 8.0, 3$0^{\circ}C$ and 2.0％, respectively. In a resistance test for environmental factors, heat and cold resistants of V. parahaemolyticus were higher than those of V. vulnificus, withstanding for 15 minutes at 6$0^{\circ}C$ and 6 days at -18$^{\circ}C$. The pH range for existence of V. parahaemolyticus and V. vulnificus were 4.5~l1.0 and 4.5~10.0, showing the similar resistance to pH. V. parahaemolyticus and V. vulnificus could grow in media containing up to 10.0% and 7.0% NaCl, respectively, Salt-tolerance of V. parahaemolyticus was higher than that of V. vulnificus. In an antibiotics sensitivity test against 16 strains of V. parahaemolyticus, twelve strains were resistant to ampicillin, eight strains were resistant to cephalothin. one strain was resistant to streptomycin, and one strain was resistant to ticarcillin.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.148-152
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• 2001

One set of MMIC library has been developed using gate recess etching by spin processor. It is superior than that of dipping Method in the uniformity and the reproducibility of gate recess. A DC characteristics of p-HEMT have a uniform characteristics in the whole wafer than that of dipping method. The low noise p-HEMT with the $0.6{\mu}m$ and $200{\mu}m$ of gate length and gate width, respectivily, has a uniform characteristics of Idss 130~145 mA, conductances 190~220mS/nm, and threshold voltage -0.7~-1.1V in the drain voltage of 2V.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.3
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• pp.145-152
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• 2003

Electrical gate and drain characteristics of double heterostructure InAlAs/InGaAs pseudomorphic HEMTs have been investigated under sub-bandgap photonic excitation ($hv). Drain $(V_{DS})-,{\;}gate($V_{DS})-$, and optical power($P_{opt}$)-dependent variation of the abnormal gate leakage current and associated physical mechanisms in the PHEMTs have been characterized. Peak gate voltage ($V_{GS,P}$) and the onset voltage for the impact ionization ($V_{GS.II}$) have been extracted and empirical model for their dependence on the $V_{DS}$ and $P_{opt} have been proposed. Anomalous gate and drain current, both under dark and under sub-bandgap photonic excitation, have been modeled as a parallel connection of high performance PHEMT with a poor satellite FET as a parasitic channel. Sub-bandgap photonic characterization, as a function of the optical power with $h\nu=0.799eV$, has been comparatively combined with those under dark condition for characterizing the bell-shaped negative humps in the gate current and subthreshold drain leakage under a large drain bias.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1226-1227
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• 2008

In this study, a single p-type Si nanowire - Au nanoparticles nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of p-type Si nanowire-based field effect transistor (FET) devices with Au nanoparticles embedded in the $Al_2O_3$ gate materials and without the Au nanoparticles. Drain current versus gate voltage ($I_{DS}-V_{GS}$) characteristics of a single p-type Si nanowire - Au nanoparticle NFGM device show counterclockwise hysteresis loops with the threshold voltage shift of ${\Delta}V_{th}$= 3.0 V. However, p-type Si nanowire based top-gate device without Au nanoparticles does not exhibit a threshold voltage shift. This behavior is ascribed to the presence of the Au nanoparticles, and is indicative of the trapping and emission of electrons in the Au nanoparticles.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.122-122
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• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

• Journal of IKEEE
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• v.25 no.2
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• pp.350-355
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• 2021

IGBT is a power semiconductor device that contains both MOSFET and BJT structures, and it has fast switching speed of MOSFET, high breakdown voltage and high current of BJT characteristics. IGBT is a device that targets the requirements of an ideal power semiconductor device with high breakdown voltage, low V_CE-SAT, fast switching speed and high reliability. In this paper, we analyzed Gate oxide thickness, Trench Gate Width, and P+Emitter width, which are the top process parameters of 1,200V Trench Gate Field Stop IGBT, and suggested the optimized top process parameters. Using the Synopsys T-CAD Simulator, we designed IGBT devices with electrical characteristics that has breakdown voltage of 1,470 V, V_CE-SAT 2.17 V, Eon 0.361 mJ and Eoff 1.152 mJ.

• The Korean Journal of Physiology and Pharmacology
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• v.10 no.1
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• pp.7-11
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• 2006

Interstitial cells of Cajal (ICCs) are pacemakers in gastrointestinal tracts, regulating rhythmicity by activating nonselective cation channels (NSCCs). In the present study, we investigated the general characteristics and pH-mediated regulation of pacemaker activity in cultured interstitial cells of Cajal. Under voltage clamp mode and at the holding potential of -60 mV, the I-V relationships and difference current showed that there was no reversal potential and voltage-independent inward current. Also, when the holding potentials were changed from +20 mV to -80 mV with intervals of 20 mV, there was little difference in inward current. In pacemaker activity, the resting membrane potential (RMP) was depolarized (In pH 5.5, $23{\pm}1.5$ mV depolarized) and the amplitude was decreased by a decrease of the extracellular pH. However, in case of increase of extracellular pH, the RMP was slightly hyperpolarized and the amplitude was decreased a little. The melastatin type transient receptor potential (TRPM) channel 7 has been suggested to be required for intestinal pacemaking activity. TRPM7 produced large outward currents and small inward currents by voltage ramps, ranging from +100 to -100 mV from a holding potential of -60 mV. The inward current of TRPM7 was dramatically increased by a decrease in the extracellular pH. At pH 4.0, the average inward current amplitude measured at -100 mV was increased by about 7 fold, compared with the current amplitude at pH 7.4. Changes in the outward current (measured at +100 mV) were much smaller than those of the inward current. These results indicate that the resting membrane potential of pacemaking activity might be depolarized by external acidic pH through TRPM7 that is required for intestinal pacemaking activity.

• Food Science and Preservation
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• v.14 no.2
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• pp.188-193
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• 2007

The purpose of this study was to isolate lactic acid bacteria, useful in the fermentation industry from Hahyangju Nuruk. Five strains were isolated, and identified as Lactobacillus based on growth inhibition by 10% (v/v) alcohol at pH 4.0. Isolated strains were identified to species, and named Lactobacillus plantarum L-3, L. sakei L-10, and L. curvatus strains L-8, L-11, and L-12. Morphological characteristics, physiological data, carbohydrate fermentation patterns, and 16S rRNA sequence data, were all used to characterize the bacterial isolates. L. plantarum L-3 showed the highest lactic acid productivity of all isolates, but grew only poony in the presence of 10% (v/v) alcohol at pH 4.0. The other strains exhibited lower lactic acid productivity than did L. plantarum L-3 and did not grow in the presence of 10% (v/v) alcohol at pH 4.0. The optimal temperature and pH for lactic acid production were $30^{\circ}C$ and pH 6.0 7.0, respectively. The lactic acid productivity of L. plantarum L-3, L. sakei L-10 and the three L. curvatus strains L-8, L-11, and L-12 were (% v/v of culture supematant) 1.55, 1.0, 1.06, 1.0, and 0.99, respectively, at $30^{\circ}C$ and pH 6.0. While L. plantarum L-3 suffered growth inhibition in the presence of 10% (v/v) alcohol, growth of the other strains was inhibited at 8% (v/v) alcohol.