• Journal of Advanced Navigation Technology
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• v.10 no.2
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• pp.138-144
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• 2006

In this paper, dual mode FET mixer for WiBro and wireless LAN(WLAN) applications has been designed in the form of dual gate FET mixer by using the cascode structure of two single gate pHEMTs. The designed dual gate mixer has been optimized to have variable conversion gain for WiBro and WLAN applications in order to save dc power consumption. The LO to RF isolation of the designed mixer is more than 20dB from 2.3GHz to 2.5GHz band. With the LO power of 0dBm and RF power of -50dBm, the mixer shows 15dB conversion gain. When RF power increases from -50dBm to -20dBm, the conversion gain decreases to -2dB from 15dB with bias change. The variable conversion gain has several advantages. It can reduce the high dynamic range requirement of AGC burden at IF stage. Also, it can save the dc power dissipation of mixer up to 90%.

• Journal of electromagnetic engineering and science
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• v.9 no.4
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• pp.218-222
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• 2009

In this paper, we present a CPW-based 77 GHz 3-stage power amplifier MMIC for automotive radar systems. The power amplifier MMIC has been realized using a 130 nm $In_{0.88}$GaP/$In_{0.4}$AlAs/$In_{0.4}$GaAs metamorphic high-electron mobility transistors(mHEMTs) technology and an output stage with a cascode configuration. This produced a good output power and gain performance at 77 GHz. The fabricated power amplifier MMIC exhibited a small-signal gain of 18 dB, an output power of 17 dBm and 9 % power added efficiency(PAE) at 77 GHz with a total gate width of 800 ${\mu}m$ in the output stage. These performances could be useful to low-cost and small-sized components for 77 GHz automotive radar systems.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.11
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• pp.49-54
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• 2001

In this work, we developed a Ka-band hybrid 4-stage power amplifier module using GaAs pHEMTs and waveguide to microstrip transitions. It has high gain and high output power characteristics. We used a 10 mil- thickness duroid substrate to fabricate this power amplifier and waveguide to microstrip transitions. The fabricated waveguide to microstrip transition showed about 1 dB insertion loss(back to back) at 32 40 GHz. The measured results of power amplifier module showed over 1W output power at 36.1 - 37.1 GHz. And it showed 31 dBm output power, 24 dB power gain and 15 % power-added efficiency(PAE) at 36.5 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.8
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• pp.1591-1597
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• 2003

In this paper, Active Resonator Oscillator using active inductor and active capacitor with HEMTs(agilent ATF­34143) is designed and fabricated. Active inductor with ­25$\Omega$ and 2.4nH in 5.5GHz frequency band and Active capacitor with ­14$\Omega$ and 0.35pF is designed. Active Resonator Oscillator for LO in ISM band(5.8GHz) is designed with active inductor and active capacitor. Active Resonator Oscillator has been simulated by Agilent ADS 2002C. Active Resonator oscillator implemented on the substrate which has the relative dielectric constant of 3.38, the height of 0.508mm, and metal thickness of 0.018mm. This Active Resonator Oscillator shows the oscillation frequency of 5.68GHz with the output power of ­3.6㏈m and phase noise of ­81㏈c/Hz at the offset frequency of 100KHz.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.637-641
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• 2006

We present the DC and RF characteristics of 100 nm gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). We fabricated the T-gate with 100 nm foot print by using a positive resist ZEP520/P (MMA-MAA)/PMMA trilayer by double exposure method. The fabricated 100 nm MHEMT with a $70\;{\mu}m$ unit gate width and two fingers were characterized through do and rf measurements. The maximum drain current density of 465 mA/mm and extrinsic transconductance $(g_m)$ of 844 mS/mm were obtained with our devices. From rf measurements, we obtained the current gain cut-off frequency $(f_T)$ of 192 GHz, and maximum oscillation frequency $(f_{max})$ 310 GHz.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.324-327
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• 2020

The impact of output conductance (g_o) on the short-circuit current-gain cut-off frequency (f_T) in In_0.8Ga_0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of f_T in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for f_T in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with L_g from 260 to 25 nm. In long-channel devices, the effect of the intrinsic output conductance (g_oi) on f_T was negligible. This was because, from the simplified SSM perspective, three model parameters, such as g_{m_ext}, C_{gs_ext} and C_{gd_ext}, were weakly dependent on g_oi. However, in short-channel devices, g_oi was found to play a significant role in degrading f_T as L_g was scaled down. The increase in g_oi in short-channel devices caused a considerable reduction in g_{m_ext} and an overall increase in the total extrinsic gate capacitance, yielding a decrease in f_T with g_oi. Finally, the results were used to infer how f_T is influenced by g_oi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down L_g.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.2
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• pp.397-401
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• 2005

In this paper, we have developed a frequency mixer which can be used as a microwave phase conjugator in the retrodirective array antenna. The retrodirective array, which can reflect the incident wave retrodirertively back to the source direction without any priori information, requires phase conjugators to achieve the phase change of 180 degrees for the incoming signal. frequency mixers can efficiently serve as phase conjugators. The circuit topology is of the 2-port structure to avoid the complexity of LO and Rf signal combination and matching circuits, using a pseudomorphic HEU device. The operating frequencies are 4.0 CHz, 2.01 CHz, and 1.99 CHz for LO, RF, and If signals, respectively. Conversion loss is measured to be -ldB and 1-dB compression point -l5 dBm at the LO power of -10 dBm.

• Journal of the Korea Institute of Military Science and Technology
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• v.17 no.4
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• pp.485-491
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• 2014

An Antenna & RF system for a fly-away satcom terminal application on ka-band is presented in this paper. The Fly-away satellite terminal can be moved and operated by two person and adapt automatic satellite tracking system in order to decrease the tracking time. Additionally, for low-power consumption, compact size and light-weight, a dual reflector antenna is constructed using dual-offset gregorian antenna structure. For minimize weight, the reflector of the antenna is made of Magnesium. For low-power consumption and light-weight, the pHEMT MMIC compound devices is utilized. The Electronic Band-Gap(EBG) Low-Pass Filter(LPF) is designed for harmonic rejection. In the receiving part, Low-Noise Block converter(LNB) structure is designed for compact and lightweight. In this paper, fly-away satcom terminal with low-power consumption, compact size and light-weight is described with antenna system and RF system performances. Through the experimentation, fly-away terminal's EIRP is more than 50dBW, G/T is more than $17dB/^{\circ}K$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.11-11
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• 2007

1차원 구조체인 반도체 나노선은 앙자제한효과 (quantum confinement effect) 등을 이용하여 고밀도/고효율의 소자 개발이 기대되고 있다. GaN는 상온에서 3.4 eV의 밴드갭 에너지를 갖는 III-V 족 반도체 재료로써 박막의 경우 광전자 소자로 폭넓게 응용되고 있다. 최근 GaN 나노선의 합성에 성공하면서 발광소자, 고효율의 태양전지, HEMT 등으로의 응용을 위한 많은 연구가 활발히 이루어지고 있다. 하지만, 아직까지 GaN 나노선의 전기적 특성을 제어하는 기술은 확립되지 않고 있다. 본 연구에서는 Vapor solid (VS)법을 이용하여 GaN 나노선을 합성하였으며, GaN 분말과 함께 $Mg_2N_3$ 분말을 첨가하여 (Ga,Mg)N 나노선을 성공적으로 합성하였다. 합성시에 GaN와 Mg 소스간의 거리 변화를 통해 Mg 도핑농도를 제어하고자 하였다. 이 같은 방법으로 합 된 (Ga,Mg)N 나노선의 Mg 도핑농도에 따른 결정학적 특성을 알아보고, (Ga,Mg)N 나노선을 이용하여 소자를 제작한 후 그 전기적 특성을 살펴보고자 한다. X-ray diffraction (XRD)과 high-resolution transmission electron microscopy (HRTEM), EDX를 이용하여 합성된 나노선의 결정학적 특성과 Mg의 도핑 농도를 확인하였다. Photo lithography와 e-beam lithography법을 이용하여 (Ga,Mg)N 나노선 field-effect transistor (FET)를 제작하고, channel current-drain voltage ($I_{ds}-V_{ds}$) 와 channel current-gate voltage ($I_{ds}-V_g$) 측정을 통해 (Ga,Mg)N 나노선이 도핑 농도에 따라 n형에서 p형으로 전기적 특성이 변화함을 확인하였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.9
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• pp.1098-1106
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• 2007

This paper presents active antenna diplexers implemented into an ultra-wideband CPW(Coplanar Waveguide) fed monopole antennas. The proposed active antenna diplexer is designed to direct interconnect the output port of a wideband antenna to the input port of two active(HEMT) devices, where the impedance matching conditions of the proposed active integrated antenna are optimized by adjusting CPW(Coplanar Waveguide) feed line to be the length of 1/20 $\lambda_0$(@5.8 GHz) in planar type wideband antenna. The measured bandwidth of the active integrated antenna shows the range from 2.0 GHz to 3.1 GHz and from 5.25 GHz to 5.9 GHz. The measured peak gains are 17.0 dB at 2.4 GHz and 15.0 dB at 5.5 GHz.