• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.157-161
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• 2017

$(1-x)Bi_{0.5}(Na_{0.78}K_{0.22})_{0.5}TiO_3-xLaFeO_3$ ceramics were fabricated using a solid state reaction method. The microstructural, ferroelectric and piezoelectric properties were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM), and polarization hysteresis loops (P-E). XRD results indicated that BNKT ceramic crystal structure modified by $LaFeO_3$ was transformed from a ferroelectric tetragonal to a non-polar pesudo-cubic phase with increased $LaFeO_3$ content. The improved piezoelectric properties resulted from the addition of $LaFeO_3$ up to 3 mol%. The $LaFeO_3$ 3mol% sample showed markedly improved piezoelectric and strain behaviors in comparison with pure BNKT ceramic.

• Journal of the Korean Ceramic Society
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• v.56 no.4
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• pp.412-420
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• 2019

In this study, the dielectric and polarization properties of manganese (Mn% = 0.0, 0.1, 0.2, 0.5) doped (Pb_0.93La_0.07)(Zr_0.82Ti_0.18)O₃ (PLZT 7/82/18) anti-ferroelectric ceramics were studied for energy storage capacitor and pyroelectric applications. A systematic investigation demonstrated that the electric properties of PLZT 7/82/18 ceramics are affected significantly by the Mn-doping content. A maximum dielectric constant of ~ 2,128 at 1 kHz was found for 0.1% Mn-doped PLZT ceramics with a low dielectric loss of 0.018. The bipolar polarization versus electric field (P-E) hysteresis loops were traced for all compositions showing a typical anti-ferroelectric nature. The breakdown field was found to decrease with Mn-doping. The energy storage density and efficiency were found to be 460 J/㎤ and ~ 63%, respectively, for 0.2% Mn-doped PLZT ceramics. The pyroelectric coefficient of PLZT ceramics shows an increase based on the amount of Mn-doping.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1408-1416
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• 1995

Microstructure and ferroelectric properties of sol-gel derived PZT(52/48) and PT interlayered PZT(52/48) thin films on Pt/Ti/SiO2/Si substrates were investigated. Films were fabricated using Acetylacetone chelated PT and PZT(52/48) sols. PZT(52/48) thin films annealed at $700^{\circ}C$ for 20 min showed the rosette structure with the size of 1.2~1.6${\mu}{\textrm}{m}$ and the pyrochlore phse was contained. PT interlayered PZT thin films, which is inserted by PbTiO3 thin layer with the thickness of 130 $\AA$ between PZT thin film and electrode, consisted of a single perovskite phase after annealing above 55$0^{\circ}C$. They exhibited the uniform and columnar grains of 0.1~0.16${\mu}{\textrm}{m}$, which are applicable for microelectronic device including non-volatile memory. Typical P-E hysteresis loops could be obtained from PT interlayered PZT thin film at as low as the annealing temperature of 50$0^{\circ}C$. Ferroelectric properties of PT interlayered PZT thin films were improved as increasing annealing temperature up to $700^{\circ}C$, and then deteriorated at 75$0^{\circ}C$. PZT(52/48) and PT interlayered PZT(52/48) thin film annealed at $700^{\circ}C$ for 20 min displayed Ps=38.8$\mu$C/$\textrm{cm}^2$, Pr=10.0$\mu$C/$\textrm{cm}^2$, Ec=65.3 kV/cm and Ps=28.5$\mu$C/$\textrm{cm}^2$, Pr=9.8$\mu$C/$\textrm{cm}^2$, Ec=76.1 kV/cm, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.3
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• pp.1-8
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• 2002

In order to study electric properties of (Pb$\_$0.9/La$\_$0.1/)Ti$\_$0.975/O$_3$(PLT (10)) films with varying excess lead concentration (7.5, 10, 12.5, 15 ㏖% excess lead), the PLT films were deposited by sol-gel process. DTA analyses reveal that the crystallization temperature of the precursor powers decreased with increasing amount of excess lead. XRD patterns of PLT reveal pure perovskite structure and the preferred orientation increased with increasing Pb content in the films. With increasing amount of excess P$\_$b/, the relative permittivity ($\xi$$\_$r/) increased and leakage current density at 100 ㎸/cm transformed 4.01$\times$10$\^$-5/, 2.42$\times$10$\^$-6/, 1.27$\times$10$\^$-6/, 1.56$\times$10$\^$-6/A/㎠ respectively. In the results of hysteresis loops measured at 166 kV/cm, the remanent polarization (P$\_$r/) and the coercive field (E$\_$c) are 6.36$\mu$C/cm and 58.7 ㎸/cm, respectively (at 12.5 ㏖% excess P$\_$b/) With increasing amount of excess Pb, the remanent polarization for PLT thin film degraded to about 44%, 27%, 15%, 16% of the initial value after 10$\^$9/ cycles./TEX>) With increasing amount of excess Pb, the remanent polarization for PLT thin film degraded to about 44%, 27%, 15%, 16% of the initial value after $10^{9}$ cycles.

• Proceedings of the Korean Magnestics Society Conference
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• 2011.06a
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• pp.7-8
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• 2011

Basically, the lattice mismatch between film and substrate can make those BiFeO3(BFO) films distorted with strain structure. BFO phase can be stabilized on LaAlO3(LAO) represents the example of a multiferroic with giant axial ratio. Its crystal structure is not strictly tetragonal, but tetragonal with a slight monoclinic distortion and related to the rotation of the oxygen octahedra. In this study, we show that phases with a tetragonal-like epitaxial BFO films can indeed be ferroelectric and also can be stabilized via epitaxial growth onto LAO. Recent reports on epitaxial BFO films show that the crystal structure changes from nearly rhombohedral ("R-like") to nearly tetragonal("T-like") at strains exceeding approximately -4.5%, with the "T-like" structure being characterized by a highly enhanced c/a ratio. While both the "R-like" and the "T-like" phases are monoclinic, our detailed x-ray diffraction results reveal asymmetry change from MA and MC type, respectively. By applying additional strain or by modifying the unit cell volume of the film by substituting Ba for Bi, the monoclinic distortion in the "T-like" MC phase is reduced, i.e. the system approaches a true tetragonal symmetry. There are two different M-H loops for $Bi_{1-x}Ba_xFeO_{3-{\delta}}$(BBFO) and BFO films on SrTiO3(STO) & LAO substrates. Along with the ferroelectric characterization, these magnetic data indicate that the BFO phase stabilized on LAO represents the first example of a multiferroic with giant axial ratio. However, there is a significant difference between this phase and other predicted ferroelectrics with a giant axial ratio: its crystal structure is not strictly tetragonal, but tetragonal with a slight monoclinic distortion. Therefore, in going from bulk to highly-strained films, a phase sequence of rhombohedral(R)-to-monoclinic ["R-like" MA-to-monoclinic, "T-like" MC-to-tetragonal (T)] is observed. This sequence is otherwise seen only near morphotropic phase boundaries in lead-based solid-solution perovskites (i.e. near a compositionally induced phase instability), where it can be controlled by electric field, temperature, or composition. Our results show that this evolution can occur in a lead-free, stoichiometric material and can be induced by stress alone. Those major results are summarized as follows ; 1) Ba-doping increases the unit cell volume, 2) BBFO on LAO can be fully strained up to x=0.08 as a strain limit (Fig. 1), 3) P(E) & M(H) properties can be tuned by the variation of composition, strain, and film thickness.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.52-57
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• 2010

$BiFeO_3/Pb(Zr_{0.52}Ti_{0.48})O_3$(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/$SiO_2$/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 kV/cm was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of $44.3{\mu}C/cm^2$ was obtained at room temperature at 1 kHz with the coercive field($2E_c$) of 681.4 kV/cm.

• The Journal of the Petrological Society of Korea
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• v.21 no.2
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• pp.151-171
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• 2012

The Permo-Triassic Songrim orogeny in the Korean peninsula was a major tectonic event involving complicated continental collisions at the eastern margin of Eurasia. Based on the previous studies on the metamorphic and deformations features of the Songrim orogeny, this paper presents metamorphic and structural characteristics and timing of the Songrim orogeny in the Taebaeksan basin, and discuss about correlation of the tectono-metamorphic evolution of the Taebaeksan basin with the Okcheon basin and the Imjingang belt with a combined analysis of bulk crustal shortening direction, metamorphic P-T and T-t (time) paths. The metapelites in the Pyeongan Supergroup in the northeastern margin of the Taebaeksan basin have experienced lower-temperature/medium-pressure (LT/MP) regional metamorphism followed by high-temperature contact metamorphism due to the Jurassic granite intrusion. The earlier LT/MP regional metamorphism produced two loops of clockwise P-T-d (deformation) paths combined with four deformation events ($D_1-D_4$). The first loop concomitant with $D_1$ and $D_2$ occurred at $400-500^{\circ}C$, 1.5-3.0 kbar, and related with growth of syn-$D_1$ chloritoid and andalusite, post-$D_1$ margarite, Ca-rich syn-$D_2$ or post-$D_2$ plagioclase. The second loop accompanying $D_3$ and $D_4$ occurred at $520-580^{\circ}C$, 2.0-6.0 kbar, and associated with the growth of syn-$D_3$ garnet and staurolite, and syn-$D_4$ and/or post-$D_4$ andalusite porphyroblasts. Furthermore the syn-$D_1$ chloritoid and andalusite porphyroblasts grew during E-W bulk crustal shortening, whereas the syn-$D_3$ garnet and staurolite, and the syn-$D_4$ and/or post-$D_4$ andalusite porphyroblasts have grown under N-S bulk crustal shortening. The similarity in the characteristics and timing of the metamorphism and bulk crustal shortening directions between the Okcheon and Imjingang belts suggest that the peak metamorphic conditions tend to increase toward the western part (Imjingang belt and southwestern part of the Gyeonggi Massif) from the eastern part (Taebaeksan basin). The E-W bulk crustal shortening influenced the eastern part of the Okcheon belt, whereas the N-S bulk crustal shortening resulted in strong deformation in the Imjingang and Okcheon belts. Consequently, the Permo-Triassic Songrim orogeny in the Korean peninsula is probably not only related to collision of the North and South China blocks, but also to the amalgamation of terrane fragments at the eastern Eurasia margin (e.g., collision of the Sino-Korean continent and the Hida-Oki terrane).

• Journal of the Korean Chemical Society
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• v.37 no.2
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• pp.237-243
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• 1993

The primary and secondary structure of the 5S rRNA isolated from Xanthomonas celebensis were determined by enzymatic and chemical degradation methods. It consists of 119 nucleotides and contains no modified nucleosides. As with the 5S rRNAs of X. maltophilia and X. citri, it contains an additional uridine residue on the 5'-terminus. Its secondary structure was almost identical to the models previously proposed by us for the 5S rRNA of two Xanthomonas species. Its secondary structure consists of five helices, five loops and two bulges. The tertiary interactions in the 5S rRNA molecule were analyzed by Fe(II)-EDTA treatment and hybridization method using deoxyhexamer. From the fact that some adenine residues in loop M, region $I_1-C$, loop $H_1$, and loop $H_2$ become susceptible to diethylpyrocarbonate when the 5S rRNA was hybridized with deoxyhexamer complementary to the sequence $U_{35}CCCAU_{40}$ and that some nucleotide residues in loop M, loop $H_1$ and region $D-I_2$ become resistant Fe(II)-EDTA cleavage in the presence of $Mg^{2+}$, it is presumed that loops $H_1$ and $H_2$ interact with loop M in some way. In the tertiary interaction, the regions $I_1-C$ and $D-I_2$ seem to act as hinges in folding the stems $B-I_1-C$ and $D-I_2-E.$ It was found that loop $H_1$ changes into a smaller loop of three bases by forming noncanonical A : C base-pairs ih acidic environment.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.141-146
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• 2009

PLZT ferroelectric thin films were deposited on Pt/Ti/$SiO_2$/Si substrate with $TiO_2$ buffer layer in between by rf magnetron sputtering method. In order to investigate the effect of Ar/$O_2$ partial pressure ratio on the ferroelectric properties of PLZT thin films, PLZT thin films were deposited at various Ar/$O_2$ partial pressure ratio ; 27/1.5 seem, 23/5.5 seem, 21/7.5 seem and 19/9.5 seem. The crystallinities of PLZT thin films were analyzed by XRD. The surface morphology was observed using FE-SEM. The P-E hysteresis loops, the remanent polarization characteristics and the leakage current characteristics were obtained using a Precision LC. The crystallinity and elaborateness of PLZT thin films were decreased as increasing the oxygen partial pressure ratio. And preferred orientation of PLZT thin films changed from (110) plane to (111) plane. The oxygen partial pressure ratio affects the thin film surface morphology and the ferroelectric properties.