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http://dx.doi.org/10.5757/JKVS.2009.18.2.141

The Effect of Ar/O2 Partial Pressure Ratio on the Ferroelectric Properties of (Pb0.92La0.08)(Zr0.65Ti0.35)O3 Thin Films Deposited by RF Magnetron Sputtering Method  

Kim, Sang-Jih (School of Materials Science & Engineering, Pusan National University)
Yoon, Ji-Eon (School of Materials Science & Engineering, Pusan National University)
Hwang, Dong-Hyun (School of Materials Science & Engineering, Pusan National University)
Lee, In-Seok (School of Materials Science & Engineering, Pusan National University)
Ahn, Jung-Hoon (School of Materials Science & Engineering, Pusan National University)
Son, Young-Guk (School of Materials Science & Engineering, Pusan National University)
Publication Information
Journal of the Korean Vacuum Society / v.18, no.2, 2009 , pp. 141-146 More about this Journal
Abstract
PLZT ferroelectric thin films were deposited on Pt/Ti/$SiO_2$/Si substrate with $TiO_2$ buffer layer in between by rf magnetron sputtering method. In order to investigate the effect of Ar/$O_2$ partial pressure ratio on the ferroelectric properties of PLZT thin films, PLZT thin films were deposited at various Ar/$O_2$ partial pressure ratio ; 27/1.5 seem, 23/5.5 seem, 21/7.5 seem and 19/9.5 seem. The crystallinities of PLZT thin films were analyzed by XRD. The surface morphology was observed using FE-SEM. The P-E hysteresis loops, the remanent polarization characteristics and the leakage current characteristics were obtained using a Precision LC. The crystallinity and elaborateness of PLZT thin films were decreased as increasing the oxygen partial pressure ratio. And preferred orientation of PLZT thin films changed from (110) plane to (111) plane. The oxygen partial pressure ratio affects the thin film surface morphology and the ferroelectric properties.
Keywords
RF magnetron sputtering; Ferroelectrics thin film; PLZT;
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