• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.375-378
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• 2015

In this study, in order to develop the composition ceramics with the excellent electrocaloric properties, $(Pb_{0.88}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ ceramics were fabricated by the conventional solid-state method. Electrocaloric effects of $(Pb_{0.88}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ ferroelectric ceramics were investigated and discussed using the characteristics of P-E hysteresis loops at wide temperature range from room temperature to $220^{\circ}C$. The temperature change ${\Delta}T$ due to the electrocaloric effect was calculated by Maxwell's relations, and reached the maximum of ~0.19 at $190^{\circ}C$ under applied electric field of 30 kV/cm.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.30.1-30.1
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• 2011

Multiferroic thin films with composition $0.9BiFeO_3-0.1Ba(Cu_{1/3}Nb_{2/3})O_3$ were epitaxially grown by pulsed laser deposition on $SrRuO_3(001)/SrTiO_3$ (000) substrate $0.9BiFeO_3-0.1Ba(Cu_{1/3}Nb_{2/3})O_3$, which is assumed to be morphotropic phase boundary (MPB), that showed superior dielectric, ferroelectric and magnetic properties in our study on polycrystalline films. The structures of epitaxially grown films were characterized by means of XRD. From P-E measurements, samples exhibited typical ferroelectric hysteresis loops and large remnant polarization, whose value is much larger than those of pure BFO film. The enhancement of dielectric, ferroelectric, magnetic properties was attributed to the structural distortion induced by the BCN addition and the high physical stress effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.608-612
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• 2016

In this study, in order to develop relaxor ferroelectric ceramics for refrigeration device application with large electrocaloric effect and low sintering temperature, PLZT(8/65/35) ceramics was fabricated using conventional solid-state method with the variation of sintering temperature ($1,050^{\circ}C$, $1,100^{\circ}C$, $1,200^{\circ}C$). The XRD pattern of all specimens indicated general perovskite structure with secondary phase. From the results of temperature dependence of dielectric constant, the $T_C$ (ferroelectric-paraelectric phase transition temperature) was shifted toward high temperature with increasing sintering temperature. When the specimen was sintered at $1,100^{\circ}C$, the optimal value of ${\Delta}T{\sim}0.349^{\circ}C$ in ambient temperature of $215^{\circ}C$ was appeared. It is considered that PLZT(8/65/35) ceramics possess the possibility of refrigeration device application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.13-16
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• 2017

In this study, in order to develop composition ceramics for refrigeration device application, $Ba(Ti_{0.9}Zr_{0.1})O_3$ composition was fabricated using conventional solid-state method. Electrocaloric effect of this ceramic was investigated using the characteristics of P-E hysteresis loops at wide temperature range from room temperature to $150^{\circ}C$. Curie temperature of $Ba(Ti_{0.9}Zr_{0.1})O_3$ ceramics showed $80^{\circ}C$. The maximum value of ${\Delta}T=0.12^{\circ}C$ in ambient temperature of $115^{\circ}C$ under 30 kV/cm was appeared. It is concluded that $Ba(Ti_{0.9}Zr_{0.1})O_3$ ceramics can be applied as refrigeration device application.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.122-129
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• 2008

Ferroelectric properties of the PMT-PT were also studied from the temperature dependence of hysteresis loops using a method slightly modified from Sawyer-Tower's. Dielectric, pyroelectric and piezoelectric properties of the ceramics in the system PMT-PT were investigated. The resulted densities of the PMT-PT ceramics system were greater than 97 % of the theoretical value. As observed SEM micrograph of the fracture surfaces of the PMT-PT ceramics system, the average grain sizes were increased about 3-5 ${\mu}m$ to 6-8 ${\mu}m$ with increasing sintering temperature. The specimens with PT<0.30 for PMT-PT solid solution system exhibited the dielectric and pyroelectric properties of a typical relaxor ferroelectrics. The composition with the maximum dielectric constant exhibits relatively superior pyroelectric and piezoelectric properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.223-228
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• 2017

In this study, in order to develop composition ceramics for refrigeration device application at a temperature of less than $90^{\circ}C$, a $Ba(Ti_{1-x}Zr_x)O_3$ composition was fabricated using a conventional solid-state method. Electrocaloric properties of these ceramics were investigated using the characteristics of P-E hysteresis loops in a wide temperature range from room temperature to $150^{\circ}C$. The Curie temperature of $Ba(Ti_{1-x}Zr_x)O_3$ ceramics decreased with the increase of x. The maximum value of ${\Delta}T=0.07^{\circ}C$ in an ambient temperature of $85^{\circ}C$ under 30 kV/cm appeared when x = 0.125. It was concluded that the composition (x = 0.125) ceramics can be used for refrigeration device applications.

• Journal of the Korean Chemical Society
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• v.63 no.6
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• pp.453-458
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• 2019

Synthesis of ZnCo₂O₃ oxide is performed by sol-gel method via nitrate-citrate route. Powder X-ray diffraction (XRD) study shows monoclinic unit cell having lattice parameters: a = 5.721(1) Å, b = 8.073(2) Å, c = 5.670(1) Å, β = 93.221(8)°, space group P_2/m and Z = 4. Average crystallite sizes determined by Scherrer equation are the range ~14-32 nm, whereas SEM micrographs show nano-micro meter size particles formed in ZnCo₂O₃. Endothermic peak at ~798 K in the Differential scanning calorimetric (DSC) trace without weight loss could be due to structural transformation and the endothermic peak ~1143 K with weight loss is due to reversible loss of O₂ in air atmosphere. Energy Dispersive X-ray (EDX) analysis profile shows the presence of elements Zn, Co and O which indicates the purity of the sample. Magnetic measurements in the range of +12 kOe to -12 kOe at 10 K, 77 K, 120 K and at 300 K by PPMS-II Physical Property Measurement System (PPMS) shows hysteresis loops having very low values of the coercivity and retentivity which indicates the weakly ferromagnetic nature of the oxide. Observed X-band EPR isotropic lineshapes at 300 K and 77 K show positive g-shift at g_iso ~2.230 and g_iso ~2.217, respectively which is in agreement with the presence of paramagnetic site Co²⁺(3d⁷) in the oxide. DC conductivity value of 2.875 ×10^-8 S/cm indicates very weakly semiconducting nature of ZnCo₂O₃ at 300 K. DRS absorption bands ~357 nm, ~572 nm, ~619 nm and ~654 nm are due to the d-d transitions ⁴T_1g(⁴F)→²E_g(²G), ⁴T_1g(⁴F)→⁴T_1g(⁴P), ⁴T_1g(⁴F)→⁴A_2g(⁴F), ⁴T_1g(⁴F)→⁴T_2g(⁴F), respectively in octahedral ligand field around Co²⁺ ions. Direct band gap energy, E_g~ 1.5 eV in the oxide is obtained by extrapolating the linear part of the Tauc plot to the energy axis indicates fairly strong semiconducting nature of ZnCo₂O₃.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.707-711
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• 2014

The $0.99Bi_{0.5}(Na_{0.78}K_{0.22})_{0.5}TiO_3-0.01LaAlO_3$, $0.01LaMnO_3$ or $0.01LaFeO_3$ (0.99BNKT-0.01LA, 0.01LM or 0.01LF) ceramics were prepared by a conventional mixed mothod. The structure and morphology of the lead free ceramics were characterized by XRD (X-ray diffraction) and FE-SEM (field emission scanning electron microscopy). XRD results indicated that the BNKT ceramics modified by LA, LM or LF induced a transition from a ferroelectric tetragonal to a non-polar pseudo-cubic phase, leading to decrease in the remnant polarization ($P_r$) and coercive field ($E_c$) in the P-E hysterisis loops. The effects of the BNKT ceramics modified by La-based $ABO_3$ pervskite structure on the electric-field induced strain were investigated, and the largest normalized unipolar strain ($S_{max}/E_{max}$) was found in BNKT-0.01LF ceramic.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.631-637
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• 2003

We have evaluated structural and electric, ferroelectric properties of PZT(30/70) thick film prepared by using 1,3-propanediol based sol-gel method on Pt/Ti/SiO$_2$/Si substrates. Rapid thermal annealing (RTA) is used to reduce the thermal stress and final furnace annealing is processed at $650^{\circ}C$. As the results of SEM analysis, we find that we get 350 nm in thickness for one coating and 1 $\mu$m for three times of coating. In the results of C-D analysis at 1 kHz, dielectric constant ($\varepsilon$$_{r}$) and dissipation factor were 886 and 0.03, respectively. C-V curve is shaped as a symmetrical butterfly. Leakage current density at 200 kV/cm is 1.23${\times}$10$^{-5}$ A/cm$^2$ and in the results of hysteresis loops measured at 150 kV/cm, the remnant polarization (P$_{r}$) and the coercive field (E$_{c}$) are 33.8 $\mu$C/cm$^2$ and 56.9 kV/cm, respectively. PZT(30/70) thick film exhibits relatively good ferroelectric, electric properties.s..

• Korean Journal of Materials Research
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• v.19 no.11
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• pp.601-606
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• 2009

$BiFeO_3$ (BFO) thin films were prepared on $Pt/TiO_2/Si$ substrate by r.f. magnetron sputtering. The effects of deposition pressure on electrical properties were investigated using measurement of dielectric properties, leakage current and polarization. When BFO targets were prepared, Fe atoms were substituted with Mn 0.05% to increase electrical resistivity of films. (Fe+Mn)/Bi ratio of BFO thin films increases with increasing partial pressure of $O_2$ gas. The deposited films showed the only BFO phase at 10 mTorr, the coexistence of BFO and $Bi_2O_3$ phase at 30-50 mTorr, and the only $Bi_2O_3$ phase at 70 mTorr. The crystallinity of BFO films was reduced due to the higher Bi contents and the decrease of surface mobility of atoms at high temperature. The porosity and surface roughness of films increased with the increase of the deposition pressure. The films deposited at high pressure showed low dielectric constant and high leakage current. The dielectric constant of films deposited at various deposition pressures was 84${\sim}$153 at 1 kHz. The leakage current density of the films deposited at 10${\sim}$70 mTorr was about $7{\times}10.6{\sim}1.5{\times}10.2A/cm^2$ at 100 kV/cm. The leakage current was found to be closely related to the morphology and composition of the BFO films. BFO films showed poor P-E hysteresis loops due to high leakage current.