• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.503-508
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• 2004

This paper proposes an efficient computation method for fixed and mixed polarity Reed -Muller function vector over Galois field GF(p). Function vectors of fixed polarity Heed Muller function with single variable can be generated by proposed method. The n-variable function vectors can be calculated by means of the Kronecker product of a single variable function vector corresponding to each variable. Thus, all fixed and mixed polarity Reed-Muller function vectors are calculated directly without using a polarity function vector table or polarity coefficient matrix.

• Molecules and Cells
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• v.22 no.2
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• pp.146-153
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• 2006

Cell polarity is critical for the division, differentiation, migration, and signaling of eukaryotic cells. RAX2 of budding yeast encodes a membrane protein localized at the cell cortex that helps maintain the polarity of the bipolar pattern. Here, we designate SPAC6f6.06c as $rax2^+$ of Schizosaccharomyces pombe, based on its sequence homology with RAX2, and examine its function in cell polarity. S. pombe $rax2^+$ is not essential, but ${\Delta}rax2$ cells are slightly smaller and grow slower than wild type cells. During vegetative growth or arrest at G1 by mutation of cdc10, deletion of $rax2^+$ increases the number of cells failing old end growth just after division. In addition, this failure of old end growth is dramatically increased in ${\Delta}tea1{\Delta}rax2$, pointing to genetic interaction of $rax2^+$ with $tea1^+$. ${\Delta}rax2$ cells contain normal actin and microtubule cytoskeletons, but lack actin cables, and the polarity factor for3p is not properly localized at the growing tip. In ${\Delta}rax2$ cells, and endogenous rax2p is localized at the cell cortex of growing cell tips in an actin- and microtubule-dependent manner. However, ${\Delta}rax2$ cells show no defects in cell polarity during shmoo formation and conjugation. Taken together, these observations suggest that rax2p controls the cell polarity of fission yeast during vegetative growth by regulating for3p localization.

• Journal of Microbiology
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• v.44 no.3
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• pp.311-319
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• 2006

Bud6p is a component of a polarisome that controls cell polarity in Saccharomyces cerevisiae. In this study, we investigated the role of the Candide albicans Bud6 protein (CaBud6p) in cell polarity and hyphal development. CaBud6p, which consists of 703 amino acids, had 37% amino-acid sequence identity with the Bud6 protein of S. cerevisiae. The homozygous knock-out of CaBUD6 resulted in several abnormal phenotypes, such as a round and enlarged cells, widened bud necks, and a random budding pattern. In hypha-inducing media, the mutant cells had markedly swollen tips and a reduced ability to switch from yeast to hypha. In addition, a yeast two-Hybrid analysis showed a physical interaction between CaBud6p and CaAct1p, which suggests that CaBud6p may be involved in actin cable organization, like Bud6p in S. cerevisiae. Taken together, these results indicate that CaBud6 plays an important role in the polarized growth of C. albicans.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.5
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• pp.67-75
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• 1999

This paper presents a production method to GRM coefficients which are consist of $P^n$ polarities to n variables over GF(p). In general production method to GRM coefficients is derived from RM coefficients to polarity 0 using RM expansion and extended to GRM coefficients. The procedure of proposed production method to GRM coefficients is consists of 2 steps. First, obtain the optimal polarity which is contains a minimal operation to single variable and then apply the same process to all generation process of GRM coefficients using cyclic property of the polarity. Proposed method simplify the generation procedure and reduces a number of operators because of the cyclic property of polarity.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.2
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• pp.198-201
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• 2008

We investigated the operating characteristics of the flux-lock type superconducting fault current limiter(SFCL) with the parallel connection between the primary and secondary windings which are connected with two superconducting units in series. The parallel connection for current level increase of the flux-lock type SFCL is necessary to apply the SFCL into the power system. The resistance generated in superconducting units was dependent upon the winding direction of the primary and the secondary coils, which can reduce the power burden. The resistance of the superconducting elements in the subtractive polarity winding is higher than that of the additive polarity winding. The fault current limiting effect of the subtractive polarity winding is better than that of the additive polarity winding. From this results, we confirmed that the power capacity of the flux-lock type SFCL could be increased by the parallel connection of the superconducting units.

• Journal of Satellite, Information and Communications
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• v.9 no.2
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• pp.12-17
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• 2014

In this paper, modified EDNMOS device with DPS (double polarity source) structure are suggested to realize stable and robust ESD (electrostatic discharge) protection performance of high voltage operating microchip. This DPS structure inserts the P+ diffusion layer on N+ source side, which in intended to block lateral extension of the electron rich region from N+ source side. Based on our simulation results, the inserted P+ diffusion layer effectively prevents the formation of deep electron channeling induced by high electron injection. As a result, our proposed DPS_EDNMOS devices could overcome the double snapback effect of conventional Std_EDNMOS device.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.924-925
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• 2014

This paper present a method of GRM constant generation in case of prime number P=3 over finite fields. Also we discuss the method which is the optimal GRM generation compare with polarity. The proposed method is the efficiency and optimization compare with earlier method.

• Journal of applied mathematics & informatics
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• v.30 no.3_4
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• pp.353-364
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• 2012

The Wiener polarity index$W_p(G)$ of a graph G of order $n$ is the number of unordered pairs of vertices $u$ and $v$ of G such that the distance $d_G(u,v)$ between $u$ and $v$ is 3. In this paper the Wiener polarity index of some graph operations are computed. As an application of our results, the Wiener polarity index of a polybuckyball fullerene and $C_4$ nanotubes and nanotori are computed.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.601-605
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• 1995

This study was concerned, after the oxide films(50 [.angs.]) were grown in a furnace and the MOS capacitor fabricated, with experimental comparison and verification about the Interference Effect of Electronic Waves in the ultra thin oxide/silicon interface. The average error was about 0.8404[%] in n'gate/p-sub and about 0.2991[%] in p$^{+}$gate/p-sub. Therefore, it was predicted that the Interference Effect of Electronic Waves can overcome somewhat according to the gate polarity.

• Journal of IKEEE
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• v.3 no.2 s.5
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• pp.285-294
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• 1999

This paper presents a method for the generation of GRM coefncients over GF(3) by using a comparison of polarity. In general production method to GRM coefficients over GF(3) is searching for pn different polarity of an n-variable and from these optimal function according to the maximum number of zero coefficients is selected. This paper presents a method for the generation of GRM coefficients by means of compare to the number of zero coefficients without constructing the whole polarity GRM coefficients.