• Korean Journal of Materials Research
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• v.19 no.12
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• pp.637-643
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• 2009

In this study, we analyzed the effect of silicon oxynitride matrix on the optical properties of Au nanoparticles dispersed on composite film and explored the effectiveness of the silicon in fine tuning the refractive index of the composite film for applications in optical waveguide devices. The atomic fraction of nitrogen in $SiO_xN_y$ films was controlled by varying the relative flow ratio of nitrogen gas in reactive sputtering and was evaluated optically using an effective medium theory with Bruggeman geometry consisting of a random mixture between $SiO_2$ and $Si_3N_4$. The Au nanoparticles were embedded in the $SiO_xN_y$ matrix by employing the alternating deposition technique and clearly showed an absorption peak due to the excitation of surface plasmon. With increasing nitrogen atomic fraction in the matrix, the surface plasmon resonance wavelength shifted to a longer wavelength (a red-shift) with an enhanced resonance absorption. These characteristics were interpreted using the Maxwell-Garnett effective medium theory. The formation of a guided mode in a slab waveguide consisting of 3 $\mu$m thick Au:$SiO_xN_y$ nanocomposite film was confirmed at the telecommunication wavelength of 1550 nm by prism coupler method and compared with the case of using $SiO_2$ matrix. The use of $SiO_xN_y$ matrix provides an effective way of controlling the mode confinement while maintaining or even enhancing the surface plasmon resonance properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.122-122
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.229-229
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• 2008

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.76.1-76
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• 1998

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.7-11
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• 1993

Abstract Oxidation kinetics of silicon oxide films formed by rapid thermal oxidizing Si substrate in $N_2$O ambient studied. The data on $N_2$0 oxidation shows that the interfacial nitrogen-rich layers results in oxide growth in the parabolic regime by impeding oxidant diffusion to the Si$O_2$-Si interface even for ultrathin oxides. The activation energy of parablic rate constant, B, is about 1.5 eV, and the energy increses with oxide thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.304.1-304.1
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• 2016

We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.44.2-44.2
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• 2009

Polycrystalline materials suchas yttria and alumina have been applied as a plasma resisting material for the plasma processing chamber. However, polycrystal line material may easily generate particles and the particles are sources of contamination during the plasma enhanced process. Amorphous material can be suitable to prevent particle generation due to absence of grain-boundaries. We manufactured nitrogen-containing $SiO_2-Al_2O_3-Y_2O_3$ based glasses with various contents of silicon and fixed nitrogen content. The thermal properties, mechanical properties and plasma etching rate were evaluated and compared for the different composition samples. The plasma etching behavior was estimated using XPS with depth profiling. From the result, the plasma etching rate highly depends on the silicon content and it may results from very low volatile temperature of SiF4 generated during plasma etching. The silicon concentration at the plasma etched surface was very low besides the concentration of yttrium and aluminum was relatively high than that of silicon due to high volatile temperature of fluorine compounds which consisted with aluminum and yttrium. Therefore, we conclude that the samples having low silicon content should be considered to obtain low plasma etching rate for the plasma resisting material.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.381-387
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• 1993

The silicon oxynitride bonded $Si_3N_4-BN$ composite has been developed based on the selective oxidation behavier of $Si_3N_4$ over BN. The silicon oxynitride phase converted to the reaction between $Si_3N_4$ and $SiO_2$ formed on $Si_3N_4$ powder surface during oxidation treatment at the sintering temperature. The developed composite has excellent high-temperature strength, thermal shock resistance, precision machinability and corrosion resistance to the molten steel. The developed composite may therefore be used as, for example, break ring materials in continuous casting of steel.

• Journal of the Korean Ceramic Society
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• v.26 no.1
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• pp.13-20
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• 1989

After sintering Si3N4 containing 20wt% of variable composition ratio of Y2O3 and Al2O3 at 1$600^{\circ}C$, the specimens were annealed at 125$0^{\circ}C$ and 135$0^{\circ}C$ for 5, 10, 15 hours in order to crystallize the remanining oxynitride glass phases. The main grain-boundary crystalline phases in the Si3N4-Y2O3-Al2O3 system were melilite and YAG. By annealing 15hrs. at 125$0^{\circ}C$, almost all of the glasses were crystallized. During the growth of melilite, lattice volyume of $\beta$-Si3N4 was increased as Al3+ and O2- ions in the oxynitride glass diffuse into $\beta$-Si3N4 lattice, but during the growth of YAG, lattice volume of $\beta$-Si3N4 was decreased by reverse diffusion of Al3+ and O2- ions. In case of crystallization of glass phase to melilite, thermal expansion of sample was decreased, but in case of crystallization to YAG, inverse phenomen on was observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.176-176
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• 2010

OLED(Organic Light Emitting Device)는 LCD(Liquid Crystal Display)의 뒤를 잇는 차세대 디스플레이의 선두주자로서 자체발광형이기 때문에 백라이트 등의 보조광원이 불필요하며, 구동전압이 낮고 넓은 시야각과 빠른 응답속도 등의 특징을 가지고 있다. 또한 플렉서블 기판을 사용할 수 있어 차세대 디스플레이인 플렉서블 디스플레이에 적합하다. 플렉서블한 디스플레이를 만들기 위해서 플라스틱 기판에 OLED 물질을 사용하여 기존에 무겁고, 깨지기 쉬우며, 변형이 불가능한 유리로 만든 소자 보다 더 가볍고 깨지지 않고 변형이 가능한 플렉서블 디스플레이를 제작 할 수 있다. 그러나 플라스틱 기판은 매우 큰 투습율을 가지고 있어 OLED소자에 적용시키면 공기 중의 수분이나 산소와 접촉이 많아져 쉽게 산화되어 소자의 효율 및 수명이 짧아진다. 또한 OLED에 사용되는 유기물도 산소나 수분에 의해 특성이 급격히 저하되기 때문에 산소 및 수분의 차단은 필수적이다. 이러한 단점을 최소화하기 위해서 PECVD(Plasma Enhanced Chemical Vapor Deposition)로 만든 SiON(Silicon Oxynitride), $SiO_2$(Sillicon dioxide), $Si_3N_4$(Sillicon nitride) 박막을 차단막(Passivation layer)으로 사용하였다. PECVD(Plasma Enhanced Chemical Vapor Deposition)로 만든 SiON(Silicon Oxynitride), $SiO_2$(Sillicon dioxide), $Si_3N_4$(Sillicon nitride) 각각의 박막의 Crack의 특성을 85%-$85^{\circ}C$조건에서 24hr 측정하였다.