• Korean Journal of Materials Research
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• v.32 no.9
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• pp.384-390
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• 2022

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

• Corrosion Science and Technology
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• v.15 no.3
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• pp.129-134
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• 2016

The effects of Ti on the high temperature oxidation of Ni-based superalloys were investigated by cyclic oxidation at $850^{\circ}C$ and $1000^{\circ}C$. The oxide scale formed at $850^{\circ}C$ consists of $Cr_2O_3$, $Al_2O_3$, and $NiCr_2O_4$ layers, while a continuous $Al_2O_3$ layer was formed at $1000^{\circ}C$. The oxidation rate of the alloy with higher Ti content was higher than the alloy with less Ti content at $850^{\circ}C$, possibly due to the increase in the metal vacancy concentration in the $Cr_2O_3$ layer involved by incorporation of $Ti^{4+}$. However, Ti improved the oxidation resistance of the superalloy at $1000^{\circ}C$ by reducing oxygen vacancy concentration in $Al_2O_3$ layer.

• Corrosion Science and Technology
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• v.23 no.1
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• pp.33-40
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• 2024

The concentration and diffusion coefficient of oxide ion vacancies in the oxide scale formed on Fe-22Cr-0.5Mn ferritic stainless steel with and without molybdenum (Mo) was measured at 800℃ by the electrochemical polarization method. After pre-oxidation for 100 h in ambient air at 800 ℃, the oxide scale on one side was completely removed with sandpaper. A YSZ plate was placed on the side where the oxide scale remained. Platinum (Pt) meshes were attached on the top of the YSZ plate and the side where the oxide scale was removed. Changes in electrical current were measured after applying an electrical potential through Pt wires welded to the Pt meshes. The results were interpreted by solving the diffusion equation. The diffusion coefficient and concentration of oxide ion vacancy decreased by 30% and 70% in the specimen with Mo, respectively, compared to the specimen without Mo. The oxide ion vacancy concentration of chromia decreased due to the addition of Mo.

• Journal of IKEEE
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• v.27 no.3
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• pp.288-295
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• 2023

In this work, we investigated the role of oxygen annealing on the performance of Metal-Semiconductor-Metal (MSM) UV photodetector (PD) fabricated by radio frequency (RF)-sputtered Ga₂O₃ films on SiC substrates. Oxygen-nnealed Ga₂O₃ films displayed a notable increase in photocurrent and a faster decay time, indicating a decrease in persistent photoconductivity. This improvement is attributed to the reduction of oxygen vacancies and variation of defects by oxygen post-annealing. Our findings provide valuable insights into enhancing PD performance through oxygen annealing.

• The Korean Journal of Ceramics
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• v.2 no.3
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• pp.131-136
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• 1996

The electrical conductivity of polycrystalline TiO2 samples was measured over the temperature range 1000°-1400℃ and from 0.21 to 10-16 atm of oxygen. Based on the excellent fit observed between the theoretically derived relatin σ3=(Aσ+B)Po2-1/2+D'σ2 and the experimental conductivity data, the nonstoichimetric defect structure of TiO2 was rationalized in terms of a defect model involving quasi-free electrons and both singly and doubly ionized oxygen vacancies. The standard enthalpy of formation for the following defect reactions in TiO2. (a) OO={{{{ { 1} over {2 } }}O2(g)+VO+e'; Δ{{{{ { H}`_{o } ^{a } }}=5.15(eV) (b) OO={{{{ { 1} over {2 } }}O2(g)+VO+2e'; Δ{{{{ { H}`_{0 } ^{ a} }}=6.30(eV) (c) VO=VO+e'; Δ{{{{ { H}`_{0 } ^{a } }}=1.15(eV) were determined from the temperature dependence of A and B obtained from the above relation and from the experimental expression between the electron mobility and temperature. The electrical conductivity of TiO2 in air below approximately 950℃ appears, on the basis of this investigation, to be impurity controlled due to the presence of aluminum rather than intrinsic conduction.

• Journal of Magnetics
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• v.11 no.1
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• pp.12-15
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• 2006

Magnetic and electronic properties of reduced rutile titanium dioxide $(TiO_{2-\delta})$ thin films doped by Mn have been investigated. The present sol-gel-grown semiconducting $TiO_{2-\delta}:Mn$ films exhibit a ferromagnetic behavior at room temperature for a limited range of Mn content. The Mn-doped films have p-type electrical conductivity with the carrier concentration near $10^{19}\;cm^{-3}$. The observed room-temperature ferromagnetism is believed to be intrinsic but not related to free carriers such as holes. Oxygen vacancies are likely to contribute to the room-temperature ferromagnetism-trapped carriers in oxygen vacancies can mediate a ferromagnetic coupling between neighboring $Mn^{+3}$ ions. The energy band-gap change due to the Mn doping measured by spectroscopic ellipsometry exhibits a red-shift compared to that of the undoped sample at low Mn content. It is explainable in terms of strong spin-exchange interactions between Mn ion and the carrier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.58-61
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• 2008

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ fims to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of $Ar:O_2=10:90{\sim}99.33:0.66$ ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.271-279
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• 2000

5 m/o Yb-doped SrCeO3 proton conductor was prepared by a solid state reaction method and its total electriccal conductivity measured as a function of both oxygen partial pressure and water vapor partial pressure in the temperature range of 500~100$0^{\circ}C$. From the total conductivity have been deconvoluted the partial conductivities of oxide ions, protons, and holes, respectively, on the basis of the defect model proposed. The equilibrium constant of hydrogen-dissolution reaction, proton concentration, and mobilities of oxygen vacancies and protons have subsequently been evaluated. It is verified that SrCe1-xYbxO3 is a mixed conductor of holes, protons and oxide ions and the proton conduction prevails as temperature decreases and water vapor pressure increases. The heat of water dissolution takes a representative value of $\Delta$HoH=-(140$\pm$20) kJ/mol-H2O, but tends to be less negative with increasing temperature. Migration enthalpies of proton and oxygen vacancy are extracted as 0.83$\pm$0.10 eV and 0.81$\pm$0.01 eV, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.393-394
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• 2008

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ films to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of Ar:$O_2$=10:90~99.33:0.66 ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.398-399
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• 2006

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light. in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ films to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of Ar:$O_2$=10:90~99.33:0.66 ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.