• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Journal of Advanced Marine Engineering and Technology
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• 제33권7호
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• pp.1026-1033
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• 2009

Fine ceramics have high strength, excellent wear resistance, chemical stability and high strength at high temperature and are receiving attention in various fields such as construction, engineering, aerospace and marine science. Finish machining process is required to obtain precise ceramics components because sintering process necessary for obtaining high strength and high quality ceramics reduces the dimensions of components and precision of shape. But high strength and brittleness of ceramics materials cause difficulty in processing. So a process for obtaining wanted dimensions is studying using high temperature which makes ceramics softened and thermal affected recently. Laser beam is a very useful optical device for these kinds of processes. Laser process such as laser cutting, laser machining, laser heat treatment and laser-assisted machining(LAM) is researching to manufacture practical ceramics components using intense laser source which can cause local softening and damage of workpiece. In this paper, microstructural and mechanical properties of silicon nitride heated are studied as a basic study for researching of ceramics process by laser beam. The surface variation of HIP and SSN-silicon nitride was analyzed with SEM and EDS. A processing at $1,300^{\circ}C$ or above causes N element to combine into $N_2$ gas and the gas busts from surface. These phenomena make bloat, craters and heat defects on the surface of silicon nitride. Also, oxygen content is largely increased to oxidize the surface and it causes changing of phases and reducing of hardness of surface.

• 공업화학
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• 제28권3호
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• pp.299-305
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• 2017

활성탄소섬유가 전사선 조사에 의해 표면 개질되었고, NO가스 감지 능력에 미치는 영향을 살펴보기 위하여 이를 가스센서 전극으로 이용하였다. XPS 분석결과는 전자선에 의하여 표면처리된 활성탄소섬유의 산소 성분이 감소하였으며 표면의 $sp^2$ 결합탄소가 증가한 것을 보여주었다. 이러한 결과는 전자빔 조사에 따른 활성탄소섬유 표면의 구조적 변형때문으로 사료된다. 100 kGy의 전자빔이 조사된 활성탄소섬유 전극의 NO가스 민감도는 약 4%에서 약 8%로 크게 증가하였고, 그 감지 시간 또한 약 360 s에서 120 s로 의미 있게 향상되었다. 이러한 결과는 활성탄소섬유의 전자빔 조사에 의하여 $sp^2$ 탄소 결합의 증가때문에 기인한 것으로, 이는 NO가스 센싱에 대한 전극저항 변화에 상당히 영향을 주었다.

• 전기전자학회논문지
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• 제24권2호
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• pp.604-609
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• 2020

본 연구에서는 RF 스퍼터를 이용하여 SiC 기판위에 AlN막을 증착하고 급속 열처리 (RTA) 공정의 온도에 따른 AlN/4H-SiC 구조의 전기적, 재료적 특성에 대한 영향을 분석하였다. 400도에서 RTA 공정을 진행한 Ni/AlN/4H-SiC SBD 소자의 온/오프 비율은 RTA 공정 전 그리고 600도에서 RTA 공정을 한 소자에 비해 약 10배정도 높은 값을 가졌다. 또한 오제이 전자현미경을 통한 원자성분 분석을 통해 증착한 AlN 층내의 존재하는 산소의 양이 후열 처리 조건에 따라 변화함을 확인하였고 소자의 온/오프 비율 그리고 온-저항 등 소자의 성능에 영향을 주는 것을 분석하였다. 추가적으로, 제작한 소자의 노출된 음향 주파수에 따른 전기적 특성변화를 분석하였다.

• 한국작물학회:학술대회논문집
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• 한국작물학회 2017년도 9th Asian Crop Science Association conference
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• pp.205-205
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• 2017

An excess soil water condition is one of the major problems for the field crops growing in paddy fields because of their poor drainage and less availability for oxygen uptake which leads to adversely affect the photosynthesis. Therefore, the current study was undertaken with aim to investigate the effects groundwater level on the photosynthetic response of soy bean (Urum), red bean (Arari), sesame (Geonbaek), perilla (Dayu) after the transplanting to the lysimeter to investigate the plant-water relation and their effect on photosynthesis. The chlorophyll content of the crops according to the humid conditions of the soy bean, sesame and the perilla was found to be 5%, 6.89 % and 13.7% higher than that of the groundwater treated at 40cm, respectively. On the other hand, the chlorophyll content of adzuki bean decreased 6.6% from the groundwater level of 40cm, and the sorghum decreased by 5.7%. As a result of investigating the Fv / Fm value of groundwater, the adzuki bean at 20cm above groundwater was lower than that of groundwater by 40cm immediately before flowering. The Fv / Fm value of soy bean and sesame at 40cm above groundwater were lowered by flowering under groundwater 20 cm and Fv / Fm value of sorghum is increased at 40 cm treatment immediately before flowering while the Fv / Fm values of the perilla had no significant difference in comparison to those at 20 cm and 40 cm of groundwater. In the case of chlorophyll fluorescence reaction, it is known that the when the absolute value is closer to 0.82, the stress is considered less. As a result of comparing the numerical values of the crops, it was found that the sorghum was the most stressed followed by adzuki bean and sesame, while the soy beans and perilla was found on the average, as they received less stress.

• Journal of Electrochemical Science and Technology
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• 제9권3호
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• pp.195-201
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• 2018

To enhance the performance of cathodes at low temperatures, a Cu-coated cathode is prepared, and its electrochemical performance is examined by testing its use in a single cell. At $620^{\circ}C$ and a current density of $150mAcm^{-2}$, a single cell containing the Cu-coated cathode has a significantly higher voltage (0.87 V) during the initial operation than does that with an uncoated cathode (0.79 V). According to EIS analysis, the high voltage of the cell with the Cu-coated cathode is due to the dramatic decrease in the high-frequency resistance related to electrochemical reactions. From XPS analysis, it is confirmed that the Cu is initially in the form of $Cu_2O$ and is converted into CuO after 150 h of operation, without any change in the state of the Ni or Li. Therefore, the high initial cell voltage is confirmed to be due to $Cu_2O$. Because $Cu_2O$ is catalytically active toward $O_2$ adsorption and dissociation, $Cu_2O$ on a NiO cathode enhances cell performance and reduces cathode polarization. However, the cell with the Cu-coated cathode does not maintain its high voltage because $Cu_2O$ is oxidized to CuO, which demonstrates similar catalytic activity toward $O_2$ as NiO.

• 한국수소및신에너지학회논문집
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• 제23권2호
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• pp.117-124
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• 2012

Alkaline electrolysis needs the electrode having a low overvoltage and good corrosion resistance in alkaline solution such as KOH and NaOH, for the oxygen and hydrogen production. The commercial materials such as SUS(stainless steel)-316, Ni and NiFe were evaluated for the electrode in alkaline electrolysis. The test solution for the alkaline electrolysis used 1~9M NaOH and 1~9M KOH. The voltage increased with an increase of current density in each solution. As for the 15wt.% (about 5M) NaOH, the voltage of the tested electrode under the current density of 1.8A/$cm^2$ showed the almost same value. The voltage over the current density of 1.8A/$cm^2$ deceased in the order: Ni${\fallingdotseq}$NiFe$cm^2$ showed the almost same value. The voltage over the current density of 1.8A/$cm^2$ deceased in the order: NiFe${\fallingdotseq}$SUS-316. From the results, it was estimated that NiFe and Ni was suitable as the electrode for the alkaline water electrolysis using NaOH and KOH electrolyte.

• 한국수소및신에너지학회논문집
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• 제21권1호
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• pp.19-25
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• 2010

Composites of LSCF($La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$) and CGO (gadolinium doped ceria)-based ceramics are logical candidate cathode materials with CGO electrolytes. LSCF with perovskite structure was synthesized and investigated by Solid State Reaction (SSR) method used as cathode materials for SOFC (solid oxide fuel cell). The optimized temperature was $1100^{\circ}C$ to synthesize $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$ with rhombohedral structure. The polarization resistance of the LSCF/CGO (50:50 wt.%) was smaller than that of other composite cathodes. The analysis of the EIS data of LSCF/CGO suggests that the diffusion and adsorption-desorption of oxygen can be the key process in the cathodic reaction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.91-91
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• 2009

In the past decade, Pd based thin films have been studied far hydrogen gas sensors due to their high possibility for energy industry and environmental applications. In this work, we report a navel method to fabricate highly sensitive hydrogen gas sensors based on PdO thin films. The films were deposited on Si substrates in Ar and $O_2$ ambient using reactive sputtering system. A semiconductor process has been utilized to fabricate PdO films with t=40nm. We observed the resistance changes of the PdO films with various $H_2$ concentrations. It was found that the electrical properties of the thin films depend on the composition of oxygen. The sensitivity is defined as $S\;=\;(R_0-R)/R{\times}100%$, where R and $R_0$ are the resistances in the presence of exposing the hydrogen gas and air, respectively. The sensitivity of the thin films was found to be as high as about 95%. After exposing to hydrogen gas, we discovered that the nano-sized cracks formed on the surface of the PdO thin films. The nano-cracks formed in deoxidized PdO thin films were known by playing a key role to reduce more than 4 times the response time of absorption. Our results illustrate that the deoxidized PdO thin films can be used as hydrogen sensors.

• Asian Pacific Journal of Cancer Prevention
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• 제16권13호
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• pp.5191-5197
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• 2015

A partial response or resistance to chemotherapeutic agents is considered as a main obstacle in treatment of patients with cancer, including breast cancer. Refining taxane-based treatment procedures using adjuvant or combination treatment is a novel strategy to increase the efficiency of chemotherapy. PPM1D is a molecule activated by reactive oxygen species. whose expression is reported to modulate the recruitment of DNA repair molecules. In this study we examined the impact of arsenic trioxide on efficacy of paclitaxel-induced apoptosis in paclitaxel-resistant MCF-7 cells. We also investigated the expression of PPM1D and TP53 genes in response to this combination treatment. Resistant cells were developed from the parent MCF-7 cell line by applying increasing concentrations of paclitaxel. MTT assays were applied to determine the rate of cell survival. DAPI staining using fluorescent microscopy was employed to study apoptotic bodies. Real-time RT-PCR analysis was also applied to determine PPM1D mRNA levels. Our results revealed that combination of arsenic trioxide and paclitaxel elevates the efficacy of the latter in induction of apoptosis in MCF-7/PAC resistant cells. Applying arsenic trioxide also caused significant decreases in PPM1D mRNA levels (p<0.05). Our findings suggest that arsenic trioxide increases paclitaxel-induced apoptosis by down regulation of PPM1D expression. PPM1D dependent signaling can be considered as a novel target to improve the efficacy of chemotherapeutic agents in resistant breast cancer cells.