• Title/Summary/Keyword: Oxygen plasma etching

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Etchless Fabrication of Cu Circuits Using Wettability Modification and Electroless Plating (젖음성 차이와 무전해도금을 이용한 연성 구리 회로패턴 형성)

  • Park, Sang-Jin;Ko, Tae-Jun;Yoon, Juil;Moon, Myoung-Woon;Han, Jun Hyun
    • Korean Journal of Materials Research
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    • v.25 no.11
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    • pp.622-629
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    • 2015
  • Cu circuits were successfully fabricated on flexible PET(polyethylene terephthalate) substrates using wettability difference and electroless plating without an etching process. The wettability of Cu plating solution on PET was controlled by oxygen plasma treatment and $SiO_x$-DLC(silicon oxide containing diamond like carbon) coating by HMDSO(hexamethyldisiloxane) plasma. With an increase of the height of the nanostructures on the PET surface with the oxygen plasma treatment time, the wettability difference between the hydrophilicity and hydrophobicity increased, which allowed the etchless formation of a Cu pattern with high peel strength by selective Cu plating. When the height of the nanostructure was more than 1400 nm (60 min oxygen plasma treatment), the reduction of the critical impalement pressure with the decreasing density of the nanostructure caused the precipitation of copper in the hydrophobic region.

A Study on Plasma Etching Reaction of Cobalt for Metallic Surface Decontamination (금속 표면 제염을 위한 코발트의 플라즈마 식각 반응 연구)

  • Jeon, Sang-Hwan;Kim, Yong-Soo
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.6 no.1
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    • pp.17-23
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    • 2008
  • In this study, plasma processing of metal surface is experimentally investigated to enhance the surface decontamination efficiency and to find out the reaction mechanism. Cobalt, the major contaminant in the nuclear facilities, and three fluorine-containing gases, $CF_4/O_2$, $SF_6/O_2$, and $NF_3$ are chosen for the investigation. Thin metallic disk specimens are prepared and their surface etching reactions with the three plasma gases are examined. Results show that the maximum etching rate of $17.2\;{\mu}m/min.$ is obtained with NF3 gas at $420^{\circ}C$, while with $CF_4/O_2$, $SF_6/O_2$ gas plasmas those of $2.56\;{\mu}m/min.$ and $1.14\;{\mu}m/min.$ are obtained, respectively. Along with etching experiments, constituent elements of the reaction products are identified to be cobalt, oxygen, and fluorine by AES (Auger Electron Spectroscopy) analysis. It turns out that the oxygen atoms are physically adsorbed ones to the surface from the ambient not participation ones during the analysis after reaction, which supports that the surface reaction of cobalt is mainly to be a fluorination reaction.

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The stable e-beam deposition of metal layer and patterning on the PDMS substrate (PDMS 기판상에 금속층의 안정적 증착 및 패터닝)

  • Baek, Ju-Yeoul;Kwon, Gu-Han;Lee, Sang-Hoon
    • Journal of Sensor Science and Technology
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    • v.14 no.6
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    • pp.423-429
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    • 2005
  • In this paper, we proposed the fabrication process of the stable e-beam evaporation and the patterning of metals layer on the polydimethylsiloxane (PDMS) substrate. The metal layer was deposited under the various deposition rate, and its effect to the electrical and mechanical properties (e.g.: adhesion-strength of metal layer) was investigated. The influence of surface roughness to the adhesion-strength was also examined via the tape test. Here, we varied the roughness by changing the reactive ion etching (RIE) duration. The electrode patterning was performed through the conventional photolithography and chemical etching process after e-beam deposition of $200{\AA}$ Ti and $1000{\AA}$ Au. As a result, the adhesion strength of metal layer on the PDMS surface was greatly improved by the oxygen plasma treatment. The e-beam evaporation on the PDMS surface is known to create the wavy topography. Here, we found that such wavy patterns do not effect to the electrical and mechanical properties. In conclusion, the metal patterns with minimum $20{\mu}m$ line width was produced well via the our fabrication process, and its electrical conductance was almost similar to the that of metal patterns on the silicon or glass substrates.

Fabrication and Evaluation of the Flexible and Implantable Micro Electrode (생체 삽입형 유연한 마이크로 전극의 제작 및 평가)

  • Baek Ju-Yeoul;Kwon Gu-Han;Lee Sang-Woon;Lee Ky-Am;Lee Sang-Hoon
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.2
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    • pp.93-99
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    • 2006
  • In this paper, we fabricated and evaluated polydimethylsiloxane(PDMS)-based flexible and implantable micro electrodes. The electrode patterning was carried out with the photolithography and chemical etching process after e-beam evaporation of 100 ATi and 1000 A Au. The PDMS substrate was treated by oxygen plasma using reactive ion etching(RIE) system to improve the adhesiveness of PDMS and metal layers. The minimum line width of fabricated micro electrode was 20 $\mu$m. After finished patterning, we did packaging with PDMS and then brought up the electrode's part about 40 $\mu$m with gold electroplating. The Hank's balanced salt solution(HBSS) test was carried out for 6 month for endurance of fabricated micro electrode. We carried out in-vivo test for the evaluation of biocompatibility by implanting electrodes under the ICR mouse skin for 42 days.

Employing of Metal Negative Ion in Halogen Plasmas (염소저온플라스마에서 금속음이온의 이용)

  • Choi, Young-Il;Lee, Bong-Ju;Lee, Kyung-Sub
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05a
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    • pp.35-37
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    • 2001
  • The Al etching was studied employing negative ions generated in the downstream $Cl_2$ plasma. In order to etch the Al film practically on an insulator covered electrode coupled with RF power, reduction of the negative self bias voltage (Vdc) was examined using a magnetic filter which trapped electrons. Addition of $SF_6$ and $H_2$ to a $Cl_2/BCl_3$ mixture reduced significantly Vdc.

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Controlled Formation of Surface Wrinkles and Folds on Poly (dimethylsiloxane) Substrates Using Plasma Modification Techniques

  • Nagashima, So;Hasebe, Terumitsu;Hotta, Atsushi;Suzuki, Tetsuya;Lee, Kwang-Ryeol;Moon, Myoung-Woon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.223-223
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    • 2012
  • Surface engineering plays a significant role in fabricating highly functionalized materials applicable to industrial and biomedical fields. Surface wrinkles and folds formed by ion beam or plasma treatment are buckling-induced patterns and controlled formation of those patterns has recently gained considerable attention as a way of creating well-defined surface topographies for a wide range of applications. Surface wrinkles and folds can be observed when a stiff thin layer attached to a compliant substrate undergoes compression and plasma treatment is one of the techniques that can form stiff thin layers on compliant polymeric substrates, such as poly (dimethylsiloxane) (PDMS). Here, we report two effective methods using plasma modification techniques for controlling the formation of surface wrinkles and folds on flat or patterned PDMS substrates. First, we show a method of creating wrinkled diamond-like carbon (DLC) film on grooved PDMS substrates. Grooved PDMS substrates fabricated by a molding method using a grooved master prepared by photolithography and a dry etching process were treated with argon plasma and subsequently coated with DLC film, which resulted in the formation of wrinkled DLC film aligning perpendicular to the steps of the pre-patterned ridges. The wavelength and the amplitude of the wrinkled DLC film exhibited variation in the submicron- to micron-scale range according to the duration of argon plasma pre-treatment. Second, we present a method for controlled formation of folds on flat PDMS substrates treated with oxygen plasma under large compressive strains. Flat PDMS substrates were strained uniaxially and then treated with oxygen plasma, resulting in the formation of surface wrinkles at smaller strain levels, which evolved into surface folds at larger strain levels. Our results demonstrate that we can control the formation and evolution of surface folds simply by controlling the pre-strain applied to the substrates and/or the duration of oxygen plasma treatment.

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Effects of Oxygen Functional Groups introduced onto Activated Carbon Fibers on Gas Sensing Property of Chemical Warfare Agent (활성탄소섬유에 도입된 산소작용기가 유독성 화학작용제 감응특성에 미치는 영향)

  • Kim, Su Hyun;Kim, Min-Ji;Song, Eun Ji;Lee, Young-Seak
    • Applied Chemistry for Engineering
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    • v.30 no.6
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    • pp.719-725
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    • 2019
  • In this study, activated carbon fibers were treated with oxygen plasma to investigate gas sensing properties of the dimethyl methylphosphonate (DMMP), which is a simulant gas of the chemical warfare agent, according to oxygen functional group contents. As the flow rate of oxygen plasma treatment increased, oxygen groups were introduced to the surface of activated carbon fibers from 6.90 up to 36.6%, increasing the -OH group which influences the DMMP gas sensing properties. However, as the flow rate of oxygen plasma increases, the specific surface area tends to decrease because etching on the surface of activated carbon fibers occurs due to active species generated during the oxygen plasma treatment. The resistance change rate of the DMMP gas sensor increased from 4.2 up to 25.1% as the oxygen plasma treatment flow rate increased. This is attributed to the hydrogen bonding between DMMP gas and introduced hydroxyl functional group on activated carbon fibers by the oxygen plasma treatment. Therefore, the oxygen plasma is considered to be one of the important surface treatment methods for detecting chemical warfare agents at room temperature.

Temperature Dependence on Dry Etching of $ZrO_2$ Thin Films in $Cl_2/BCl_3$/Ar Inductively Coupled Plasma ($Cl_2/BCl_3$/Ar 유도 결합 플라즈마에서 온도에 따른 $ZrO_2$ 박막의 식각)

  • Yang, Xue;Kim, Dong-Pyo;Lee, Cheol-In;Um, Doo-Seung;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.145-145
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    • 2008
  • High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

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A Study on the Etcting Technology for Metal Interconnection on Low-k Polyimide (Low-k Polyimide상의 금속배선 형성을 위한 식각 기술 연구)

  • Mun, Ho-Seong;Kim, Sang-Hun;An, Jin-Ho
    • Korean Journal of Materials Research
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    • v.10 no.6
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    • pp.450-455
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    • 2000
  • For further scaling down of the silicon devices, the application of low dielectric constant materials instead of silicon oxide has been considered to reduce power consumption, crosstalk, and interconnection delay. In this paper, the effect of $O_2/SF_6$ plasma chemistry on the etching characteristics of polyimide-one of the promising low-k interlayer dielectrics-has been studied. The etch rate of polyimide decreases with the addition of $SF_6$ gas due to formation of nonvolatile fluorine compounds inhibiting reaction between oxygen and hydrocarbon polymer, while applying substrate bias enhances etching process through physical attack. However, addition of small amount of $SF_6$ is desirable for etching topography. $SiO_2$ hard mask for polyimide etching is effective under $O_2$plasma etching(selectivity~30), while $O_2/SF_6$ chemistry degrades etching selectivity down to 4. Based on the above results, $1-2\mu\textrm{m}$ L&S PI2610 patterns were successfully etched.

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A Study on the Thermal Properties and Plasma Resistance of Bi2O3-Al2O3-SiO2 Glass (Bi2O3-Al2O3-SiO2 유리의 열물성과 내플라즈마 특성 연구)

  • Young Min Byun;Jae Ho Choi;Won Bin Im;Hyeong Jun Kim
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.1
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    • pp.64-71
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    • 2023
  • In this study, we investigated the effects of BiAlSiO glass composition on its glass forming range, thermal properties, and plasma resistance. The results showed that increasing the Al2O3 content suppressed the tendency for crystallization and hindered glass formation beyond a certain threshold. Bi2O3 was found to increase the content of non-bridging oxygen, resulting in a decrease in glass transition temperature and an increase in thermal expansion coefficient. Furthermore, the etching rate was found to improve with increasing Al2O3 content but decrease with increasing SiO2 content. It was concluded that the boiling point of fluorinated compounds should be considered to 900℃. Therefore, this study is expected to contribute to the understanding of the properties of BiAlSiO glass and its application to low temperature melting PRG compositions.

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