• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.70-70
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• 2013

As the costs of carbon-footprinetd fuels grow continuously and simultaneously atmospheric carbon dioxide concentration increases, solar fuels are receiving growing attention as alternative clean energy carriers. These fuels include molecular hydrogen and hydrogen peroxide produced from water, and hydrocarbons converted from carbon dioxide. For high efficiency solar fuel production, not only light absorbers (oxide semiconductors, Si, inorganic complexes, etc) should absorb most sunlight, but also charge separation and interfacial charge transfers need to occur efficiently. With this in mind, this talk will introduce the fundamentals of solar fuel production and artificial photosynthesis, and then discuss in detail on photoelectrochemical (PEC) water splitting and CO2 conversion. This talk largely divides into two section: PEC water oxidation and PEC CO2 reduction. The former is very important for proton-coupled electron transfer to CO2. For this oxidation, a variety of oxide semiconductors have been tested including TiO2, ZnO, WO3, BiVO4, and Fe2O3. Although they are essentially capable of oxidizing water into molecular oxygen, the efficiency is very low primarily because of high overpotentials and slow kinetics. This challenge has been overcome by coupling with oxygen evolving catalysts (OECs) and/or doping donor elements. In the latter, surface-modified p-Si electrodes are fabricated to absorb visible light and catalyze the CO2 reduction. For modification, metal nanoparticles are electrodeposited on the p-Si and their PEC performance is compared.

• Bulletin of the Korean Chemical Society
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• 제8권5호
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• pp.389-393
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• 1987

The oxidation of carbon monoxide by gaseous oxygen on 0.53, 1.02, and 1.51 mol $\%$CoO-doped $-Fe_2O_3$ catalysts has been investigated in the temperature range from 340 to 480$^{\circ}C$ under various CO and $O_2$ partial pressures. The oxidation rates have been correlated with 1.5-order kinetics; the 0.5-order with respect to $O_2$ and the first-order with respect to CO. In the above temperature range, the activation energy is 0.34 $\pm$ 0.01 eV${\cdot}$$mol^{-1}$. The electrical conductivity of 0.53, 1.02, and 1.51 mol %CoO-doped $\alpha$-$Fe_2O_3$ has been measured at 350$^{\circ}C$ under various $P_{CO}and $P_{O_2}$. From the conductivity data it was found that $O_2$ was adsorbed on Vo formed by doping with CoO, while CO appeared essentially to be chemisorbed on the lattice oxygen of the catalyst surface. The proposed oxidation mechanism and the dominant defect were supported by the agreement between the kinetic data and conductivities.

• Bulletin of the Korean Chemical Society
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• 제10권5호
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• pp.418-422
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• 1989

Cadmium-doped indium sesquioxide systems with a variety of CdO mol % were prepared to investigate the effect of doping on the electrical properties of indium sesquioxide. The electrical conductivities of pure $In_2O_3$ and Cd-doped $In_2O_3$ systems were measured in the temperature range from 25 to $1200^{\circ}C$ and $P_O_2$ range from $10^{-7}$ to $10^{-1}$ atm, and the thermoelectric power was measured in the same temperature range. The electrical conductivity and thermopower decreased with increasing CdO mol % indicating that all the samples are n-type semiconductors. The electrical conductivities of pure $In_2O_3$ and lightly doped $In_2O_3$ were considerably affected by the chemisorption $O_2$ at temperatures of 400 to $560^{\circ}C$ and then gaseous oxygen was reversibly chemisorbed at the temperature. The predominant defects in $In_2O_3$ are believed to be triply-charged interstitial indiums at temperatures above $560^{\circ}C$ and oxygen vacancies below $560^{\circ}C$. In Cd-doped $In_2O_3$ systems, cadmium acts as an electron acceptor and inhibits the transfer of lattice indium to interstitial sites, which give rise to the decrease of the electrical conductivity.

• 마이크로전자및패키징학회지
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• 제29권2호
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• pp.53-58
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• 2022

One of the most promising emerging technologies for the next generation of nonvolatile memory devices based on resistive switching (RS) is the resistive random-access memory mechanism. To date, RS effects have been found in many transition metal oxides. However, no clear evidence has been reported that ZnO-based resistive transition mechanisms could be associated with strong correlation effects. Here, we investigated N, F-co-doped ZnO (NFZO), which shows bipolar RS. Conducting micro spectroscopic studies on exposed surfaces helps tracking the behavioral change in systematic electronic structural changes during low and high resistance condition of the material. The significant difference in electronic conductivity was observed to attribute to the field-induced oxygen vacancy that causes the metal-insulator Mott transition on the surface. In this study, we showed the strong correlation effects that can be explored and incorporated in the field of multifunctional oxide electrons devices.

• 한국수소및신에너지학회논문집
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• 제32권4호
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• pp.256-262
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• 2021

A carbon felt electrode was prepared using ozone and ammonia sequential treatment and applied as an electrode for a vanadium redox flow battery (VRFB). The physical and electrochemical analyses demonstrate that the oxygen groups facilitate nitrogen doping in the carbon felt. Carbon felt (J5O3+NH3), which was subjected to ammonia heat treatment after ozone treatment, showed higher oxygen and nitrogen contents than carbon felt (J5NH3+O3), which was subjected to ammonia heat treatment first and then ozone treatment. From the charging/discharging of VRFB, the J5O3+NH3 carbon felt electrode showed 14.4 Ah/L discharge capacity at a current density of 150 mA /cm², which was 15% and 33% higher than that of J5NH3+O3 and non-activated carbon felt (J5), respectively. These results show that ozone and ammonia sequential treatment is an effective carbon felt activation method to increase the performance of the vanadium redox flow battery.

• 한국재료학회지
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• 제32권5호
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• pp.237-242
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• 2022

Designing and producing a low-cost, high-current-density electrode with good electrocatalytic activity for the oxygen evolution reaction (OER) is still a major challenge for the industrial hydrogen energy economy. In this study, nanostructured Fe-doped CuCo(OH)₂ was discovered to be a precedent electrocatalyst for OER with low overpotential, low Tafel slope, good durability, and high electrochemically active surface sites at reduced mass loadings. Fe-doped CuCo(OH)₂ nanosheets are made using a hydrothermal synthesis process. These nanosheets are clumped together to form a highly open hierarchical structure. When used as an electrocatalyst, the Fe-doped CuCo(OH)₂ nanosheets required an overpotential of 260 mV to reach a current density of 50 mA cm^-2. Also, it showed a small Tafel slope of 72.9 mV dec^-1, and superior stability while catalyzing the generation of O₂ continuously for 20 hours. The Fe-doped CuCo(OH)₂ was found to have a large number of active sites which provide hierarchical and stable transfer routes for both electrolyte ions and electrons, resulting in exceptional OER performance.

• 멤브레인
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• 제25권5호
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• pp.415-421
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• 2015

고상반응법을 이용하여 $SrCo_{0.8}Fe_{0.1}Nb_{0.1}O_{3-{\delta}}$ 조성의 산화물을 합성하였으며, 합성된 분말은 압축 성형 후 $1250^{\circ}C$에서 소결하여 치밀한 세라믹 분리막을 제조하였다. XRD 분석을 통해 단일상의 페롭스카이트 구조를 확인하였다. 산소 분압이 0.21 atm, 측정 온도가 $800{\sim}950^{\circ}C$인 조건하에서 산소투과를 분석한 결과 온도가 증가할수록 산소투과량은 증가하였고, $950^{\circ}C$에서 $1.839mL/min{\cdot}cm^2$로 최대값을 나타내었다. 니오븀(Nb)을 포함한 세라믹 분리막의 상안정성 및 이산화탄소 내성을 확인하기 위하여 $900^{\circ}C$에서 이산화탄소가 500 ppm이 포함된 혼합공기를 이용하여 장기투과 실험을 수행하였다. 이산화탄소에 노출된 $SrCo_{0.8}Fe_{0.1}Nb_{0.1}O_{3-{\delta}}$의 상안정성은 XRD와 TG로 분석하였다. 분석 결과, 이산화탄소에 노출된 $SrCo_{0.8}Fe_{0.1}Nb_{0.1}O_{3-{\delta}}$ 조성의 경우 약 8%의 $SrCO_3$가 생성되었으나, 이 수준의 $SrCO_3$ 생성량은 분리막의 산소투과도에 큰 영향을 주지 않는 것을 확인하였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.39.2-39.2
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• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.

• 한국수소및신에너지학회논문집
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• 제26권6호
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• pp.516-523
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• 2015

Nickel based oxygen transfer materials supported on two different YSZs were tested to evaluate their performance in methane chemical-looping reforming. The oxygen transfer materials of YSZs were selected with different amount of the doped yittrium in the $ZrO_2$ structure. The yittrium of 8 mol% stabilized the zirconia oxide to a cubic structure compare to the 3 mol% doping, which is known to be a good for oxygen transfer. Various nickel amounts (16wt.%, 32wt.%, 48wt.%) were loaded on the selected supports. The nickel amount of 32% shows the optimized catalyst structure with good physical properties and reducibility from the XRD, BET and H2-TPR analysis, especially when the support of 8YSZ was used. From the methane chemical-looping reforming, hydrogen was produced by methane decomposition catalyzed by Ni on both YSZs. Comparing two YSZ supports of 3YSZ and 8YSZ during the cycling tests, the catalyst with 8YSZ (Ni 32%) exhibits not only the higher methane conversion and hydrogen production but also a faster reaction rate reaching to the stable point.

• 센서학회지
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• 제15권3호
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• pp.216-221
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• 2006

ZnO thin films prepared by PLD method exhibit an excellent optical property, but may have some problems such as incomplete surface roughness and crystallinity. In this study, undoped ZnO buffer layers were deposited on (0001) sapphire substrates by ultra high vacuum pulse laser deposition (UHV-PLD) and molecular beam epitaxy (MBE) methods, respectively. After post annealing of ZnO buffer layer, undoped ZnO thin films were deposited under different oxygen pressure ($35{\sim}350$ mtorr) conditions. The Arsenic-doped (1, 3 wt%) ZnO thin layers were deposited on the buffer layer of undoped ZnO by UHV-PLD method. The optical property of the ZnO thin films was analyzed by photoluminescence (PL) measurement. The ${\theta}-2{\theta}$ XRD analysis exhibited a strong (002)-peak, which indicates c-axis preferred orientation. Field emission-scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO thin films were varied by oxygen partial pressure, Arsenic doping concentration, and deposition method of the undoped ZnO buffer layer. The denser and smoother films were obtained when employing MBE-buffer layer under lower oxygen partial pressure. It was also found that higher Arsenic concentration gave the enhanced growing of columnar structure of the ZnO thin films.