• Journal of the Semiconductor & Display Technology
• /
• v.21 no.1
• /
• pp.12-16
• /
• 2022

We have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various H₂ flow rate. Experiments were carried out while varying the hydrogen gas flow rate from 0sccm to 1.0sccm in order to see how the hydrogen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 0.379×10^-5 Ωcm when the IGZO film was deposited at 300℃ and set up at 1.0sccm. As the oxygen vacancy rate increased, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

• 한국연소학회:학술대회논문집
• /
• 2005.10a
• /
• pp.328-336
• /
• 2005

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine the chemical quenching phenomenon, we prepared thermally grown silicon oxide plates with well-defined defect density. Ion implantation was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove the oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}C$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). The analysis shows that as the ion energy increases, the number of structural defect also increases and non-stoichiometric condition of $SiO_x(x{\le}2)$ plates is enhanced. From the quenching distance measurements, we found out that when the surface temperature is under $300^{\circ}C$, the quenching distance decreases on account of reduced heat loss; as the surface temperature increases over $300^{\circ}C$, however, quenching distance increases despite reduced heat loss effect. Such aberrant behavior is caused by heterogeneous chemical reaction between active radicals and surface defect sites. The higher defect density, the larger quenching distance. This results means that chemical quenching is governed by radical adsorption and can be parameterized by the oxygen vacancy density on the surface.

• Journal of the Korean Chemical Society
• /
• v.39 no.3
• /
• pp.157-162
• /
• 1995

The x values and electrical conductivities of the nonstoichiometric compounds $WO_{3-x}$ have been measured in the temperature range from 350 to 700$^{\circ}C$ under oxygen partial pressure of $2{\times}10_{-1}\;to\;1{\times}10_{-5}$ atm. The enthalpy of the defect formation shows an endothermic process, and the oxygen pressure dependence of the defect formation or 1/n varies from -1/5.2 to -1/5.9. The activation energy and 1/n value for the electrical conductivity are 0.24~0.29 eV and -1/4.3~-1/7.6, respectively. The Tungsten Oxide as a n-type semiconductor has predominently defect model of singly charged oxygen vacancy at low temperature, and of doubly charged oxygen vacancy at high temperature.

• 한국신재생에너지학회:학술대회논문집
• /
• 2007.06a
• /
• pp.196-199
• /
• 2007

The chemical states of oxygen on the surfaces of $Pr_{1-x}Sr_{x}CoO_{3}$ (x=0.5 and 0.7) oxide systems were investigated by X-ray photoelectron spectroscopy. Merged oxygen peaks of $Pr_{1-x}Sr_{x}CoO_{3}$ (x=0.5 and 0.7) oxides could be divided as five sub-peaks. These five sub-peaks could be defined as lattice oxygen ($O_{L}$). chemisorbed oxygen peaks ($O_{C}$) and hydroxyl condition oxygen peak ($O_{H}$). In case of the $Pr_{0.5}Sr_{0.5}CoO_{3}$ and $Pr_{0.3}Sr_{0.7}CoO_{3}$, the binding energy (BE) of oxygen lattice were located at same BE. However, the BE of chemisorbed oxygen peaks including oxygen vacancy shows different BE. Especially, it was found that BE of chemisorbed oxygen peaks was increased when more Sr were substituted. Comparing atomic percentages of oxygens of $Pr_{0.5}Sr_{0.5}CoO_{3}$ and $Pr_{0.3}Sr_{0.7}CoO_{3}$, the ratio of $Pr_{0.3}Sr_{0.7}CoO_{3}$ was higher than that of $Pr_{0.5}Sr_{0.5}CoO_{3}$. It showed more chemically adsorbed site including oxygen vacancies were existed in $Pr_{0.3}Sr_{0.7}CoO_{3}$.

• Journal of the Korean Electrochemical Society
• /
• v.8 no.2
• /
• pp.106-114
• /
• 2005

This article covers the theoretical ac-impedance models for the analysis of oxygen reduction on the porous cathode electrode f3r solid oxide fuel cell (SOFC). Firstly, ac-impedance models were explained on the basis of the mechanism of oxygen reduction, which were classified into the rate-determining steps; (i) adsorption of oxygen atom on the electrode surface, (ii) diffusion of adsorbed oxygen atom along the electrode surface towards the three-phase (electrode/electrolyte/gas) boundaries, (iii) surface diffusion of adsorbed oxygen atom m ixed with the adsorption reaction of oxygen atom on the electrode surface and (iv) diffusion of oxygen vacancy through the electrode coupled with the charge transfer reaction at the electrode/gas interface. In each section for ac-impedance model, the representative impedance plots and the interpretation of important parameters attributed to the oxygen reduction reaction were explained. Finally, we discussed in detail the applications of the proposed theoretical ac-impedance models to the real electrode of SOFC system.

• Applied Chemistry for Engineering
• /
• v.31 no.4
• /
• pp.368-376
• /
• 2020

In this study, an analysis on the reaction characteristics of a catalyst using platinum (Pt) as an active oxidation metal catalyst for controlling SO₂ was performed. Pt/TiO₂ catalyst was prepared by using Pt as various precursor forms on a titania (TiO₂) support, and used for the experiment. There was no difference in performance of SO₂ oxidation according to Pt valence states such as Pt²⁺ or Pt⁴⁺ on Pt/TiO₂, and Pt chloride species such as PtCl_x reduces SO₂ oxidation performance. In addition, as a result of analyzing the valence state of the catalyst before and after the SO₂ oxidation reaction by XPS analysis, a decrease in lattice oxygen and an increase in surface chemisorbed oxygen after the SO₂ oxidation reaction were confirmed. Therefore it can be suggested that the oxidation reaction of SO₂ when using the Pt/TiO₂ catalyst is the major one following the Mar-Van Krevelen mechanism where the reaction of lattice oxygen corresponding to PtOx and the oxidation-reduction reaction by oxygen vacancy occur. Overall, it can be confirmed that the oxygen species of PtOx (Pt²⁺ or Pt⁴⁺) present on the catalyst acts as a major active site.

• Journal of the Korean Magnetics Society
• /
• v.16 no.3
• /
• pp.168-172
• /
• 2006

We studied the magnetic and the related electronic properties of Ni-doped rutile $TiO_{2-{\delta}}$ films (including oxygen deficiency $\delta$) prepared using a sol-gel method. A room-temperature ferromagnetism was observed in the $TiO_{2-{\delta}}$ : Ni films with the saturation magnetization ($M_S$) decreasing with increasing Ni doping and remaining constant above 6 at% Ni doping. The observed ferromagnetism below 6 at% Ni doping is interpreted as due to magnetic polaron formed by a trapped electron in oxygen vacancy and magnetic impurity ions around it. For small Ni doping, $M_S$ up to $3.7{\mu}B/Ni$ was obtained. The ferromagnetism for Ni doping above 6 at% is interpreted as due to the existence of Ni clusters that can explain the p-n conductivity transition observed by Hall effect measurements.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.30 no.5 s.248
• /
• pp.405-412
• /
• 2006

In order to realize a stably propagating flame in a narrow channel, flame instabilities resulting from flame-wall interaction should be avoided. In particular flame quenching is a significant issue in micro combustion devices; quenching is caused either by excessive heat loss or by active radical adsorptions at the wall. In this paper, the relative significance of thermal and chemical effects on flame quenching is examined by means of quenching distance measurement. Emphasis is placed on the effects of surface defect density on flame quenching. To investigate chemical quenching phenomenon, thermally grown silicon oxide plates with well-defined defect distribution were prepared. ion implantation technique was used to control defect density, i.e. the number of oxygen vacancies. It has been found that when the surface temperature is under $300^{\circ}C$, the quenching distance is decreased on account of reduced heat loss; as the surface temperature is increased over $300^{\circ}C$, however, quenching distance is increased despite reduced heat loss effect. Such abberant behavior is caused by heterogeneous surface reactions between active radicals and surface defects. The higher defect density, the larger quenching distance. This result means that chemical quenching is governed by radical adsorption that can be parameterized by oxygen vacancy density on the surface.

• Korean Journal of Materials Research
• /
• v.31 no.6
• /
• pp.320-324
• /
• 2021

Effects of growth variables and post-growth annealing on the optical, structural and electrical properties of magnetron-sputtered Ga_0.04Mg_0.10Zn_0.86O films are characterized in detail. It is observed that films grown from pure oxygen plasma showed high resistivity, ~10² Ω·cm, whereas films grown in Ar plasma showed much lower resistivity, 2.0 × 10^-2 ~ 1.0 × 10^-1 Ω·cm. Post-growth annealing significantly improved the electrical resistivity, to 4.3 ~ 9.0 × 10^-3 Ω·cm for the vacuum annealed samples and to 1.3 ~ 3.0 × 10^-3 Ω·cm for the films annealed in Zn vapor. It is proposed that these phenomena may be attributed to the improved crystalline quality and to changes in the defect chemistry. It is suggested that growth within oxygen environments leads to suppression of oxygen vacancy (Vo) donors and formation of Zn vacancy (V_Zn) acceptors, resulting in highly resistive films. After annealing treatment, the activation of Ga donors is enhanced, Vo donors are annihilated, and crystalline quality is improved, increasing the electron mobility and the concentration. After annealing in Zn vapor, Zn interstitial donors are introduced, further increasing the electron concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.5
• /
• pp.351-354
• /
• 2013

Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.