• Korean Journal of Materials Research
• /
• v.19 no.5
• /
• pp.281-287
• /
• 2009

ZnO thin film was grown on a sapphire single crystal substrate by plasma assisted molecular beam epitaxy. In addition to near band edge (NBE) emissions, both blue and green luminescences are also observed together. The PL intensity of the blue luminescence (BL) range from 2.7 to 2.9 eV increased as the amount of activated oxygen increased, but green luminescence (GL) was weakly observed at about 2.4 eV without much change in intensity. This result is quite unlike previous studies in which BL and GL were regarded as the transition between shallow donor levels such as oxygen vacancy and interstitial zinc. Based on the transition level and formation energy of the ZnO intrinsic defects predicted through the first principle calculation, which employs density functional approximation (DFA) revised by local density approximation (LDA) and the LDA+U approach, the green and blue luminescence are nearly coincident with the transition from the conduction band to zinc vacancies of $V^{2-}_{Zn}$ and $V^-_{Zn}$, respectively.

• Industry Promotion Research
• /
• v.1 no.2
• /
• pp.7-11
• /
• 2016

$SnO_2$ films were annealed in a vacuum atmosphere conditions to research the temperature dependency of current-voltage characteristics, crystal structure and chemical properties. The $SnO_2$ film annealed in a vacuum became an amorphous structure, but the degree of amorphous structure changed in accordance with the content of oxygen vacancy, which increased at film annealed at $100^{\circ}C$ and then decreased over the sample at annealed at $150^{\circ}C$. Because the crystallinity was affected the content of oxygen vacancy. The oxygen vacancy as carriers disappeared with increasing the annealing temperatures, and the depletion layer increased. Therefore the content of exiton as optical properties increased with becoming the amorphous structure. So the intensity of PL spectra increased with increasing the annealing temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.5
• /
• pp.273-277
• /
• 2018

This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed $Al_2O_3$ diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed $Al_2O_3$ diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed $Al_2O_3$-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.

• Industry Promotion Research
• /
• v.1 no.1
• /
• pp.7-11
• /
• 2016

It was the electrical properties of IGZO prepared by the annealing in a vaccum and an atmosphere conditions to research the current-voltage characteristics. The IGZO film annealed in a vaccum became an amorphous structure but films annealed in an atmosphere condition had a crystal structure. Because of the content of oxygen vacancies during the annealing processes was changed, and the annealing in an atmosphere condition increased the oxygen vacancy in IGZO. Oxygen vacancy in IGZO increased the current and then it was observed the Ohmic contact at IGZO annealed in an atmosphere conditions. However, the IGZO prepared in a vaccum showed the Schottky contact.

• Journal of the Korean Chemical Society
• /
• v.10 no.4
• /
• pp.153-157
• /
• 1966

The measurement of Oxidation of nickel has been investigated using vacuum quartz microbalance in the temperature range of $500^{\circ}{\sim}800^{\circ}C$ at various oxygen pressure. The rate constants of nickel-oxidation were evaluated according to the parabolic rate law. From the Arrhenius equation, the activation energy in the range of experimental temperatures were found that $E_{act}$= 35.4 Kcal/mole. It was also found that the parabolic rate constants varied approximately as the one fifth power of the oxygen pressure for nickel-oxidation. The mechanism for the oxidation of this metal were seemed to be via cation vacancy produced by excess of oxygen dissolved in the oxide film.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.35-35
• /
• 2010

Understanding the mechanistic details of heterogeneous catalytic reactions will provide a way to tune the selectivity between various competing reaction channels. In this regard, catalytic decomposition of alcohols over the rutile $TiO_2$(110) surface as a model oxide catalyst has been studied to understand the reaction mechanism employing the temperature-programmed desorption (TPD) technique. The $TiO_2$(110) model catalyst is found to be active toward alcohol dehydration. We find that the active sites are bridge-bonded oxygen vacancies where RO-H heterolytically dissociates and binds to the vacancy to produce alkoxy (RO-) and hydroxyl (HO-). Two protons adsorbed onto the bridge-bonded oxygen atoms (-OH) readily react with each other to form a water molecule at ~500 K and desorb from the surface. The alkoxy (RO-) undergoes decomposition at higher temperatures into the corresponding alkene. Here, the overall desorption kinetics is limited by a first-order decomposition of intermediate alkoxy (RO-) species bound to the vacancy. We show that detailed analysis on the yield and the desorption temperatures as a function of the alkyl substituents provides valuable insights into the reaction mechanism. After the catalytic role of the oxygen vacancies has been established, we employed x-ray photoelectron spectroscopy to further study the surface electronic structure related to the catalytically active defective sites. The defect-related state in valence band has been related to the chemically reduced $Ti^{3+}$ defects near the surface region and are found to be closely related to the catalytic activity of the $TiO_2$(110) surface.

• Korean Chemical Engineering Research
• /
• v.61 no.3
• /
• pp.479-486
• /
• 2023

In this study, we investigated the effect of the Ce_xZr_1-xO₂ (CZ) addition onto Ni/Al₂O₃ catalysts on the catalytic performance in methane steam reforming. In the reaction results, the CZ-added Ni/Al₂O₃ catalyst showed higher CH₄ conversion and H₂ yield under the same reaction conditions than Ni/Al₂O₃. From the characterization data, the two catalysts had similar support porosity and Ni dispersion, confirming that the two properties could not determine the catalytic performance. However, the oxygen vacancy over the CZ-added Ni/Al₂O₃ catalyst induced an efficient steam activation at low reaction temperatures, resulting in an increase in the catalytic activity and H₂ yield.

• Journal of the Semiconductor & Display Technology
• /
• v.22 no.1
• /
• pp.18-22
• /
• 2023

We have investigated the effect of the concentration of oxygen vacancies on the characteristics of Mo-doped ZnO (MZO) thin films for the TCO (transparent conducting oxide). For this purpose, MZO thin films were deposited by RF magnetron sputtering at different substrate temperature from room temperature to 300℃. The electrical resistivity of the MZO films decreases with increasing substrate temperature up to 100℃ and then gradually increases at higher temperatures. To investigate the influences of the ambient gases, the flow rate of oxygen and hydrogen in argon was varied from 0.1 sccm to 0.5 sccm. The MZO thin films were preferentially oriented to the (002) direction, regardless of the ambient gases used. The electrical resistivity of the MZO thin films increased with increasing O₂ flow rates, whereas the electrical resistivity decreased sharply under an Ar+H₂ atmosphere and was nearly the same, regardless of the H₂ flow rate used. As the oxygen vacancy concentration increases, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the MZO thin film's electrical characteristics. All the films showed an average transmittance of over 80% in the visible range.

• Applied Microscopy
• /
• v.34 no.2
• /
• pp.113-120
• /
• 2004

Microstructural characteristics of the Complex Perovskite (1-x) $(Li_{1/2}Sm_{1/2})TiO_3-x (Na_{1/2}Sm_{1/2})TiO_3$ (LNST) system have been investigated using the transmission electron microscopy (TEM). When $0.0{\leq}x{\leq}0.6$, the vacancy ordering forming the 1/2 (001) superlattice reflections due to the A-site cation deficiencies has apperaed. It could be confirmed by presence of ABPs. But it was difficult to form the vacancy ordering since vacancy concentration gradually lowered as the amount of the substituted Li ions decrease. Antiphase boundaries (APBs) were presented in microstructures of LNST when $0.8{\leq}x{\leq}1.0$. It was considered that these boundaries were caused by the 1:1 chemical ordering of A-site cations, Na and Sm ions. LNST had not only the antiphase tilting of oxygen octahedron but also the inphase tilting of oxygen octahedron and the antiparallel shift of cations all of them. It could be confirmed by presence of ferroelastic domains

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.2
• /
• pp.198-203
• /
• 2016

We investigate the effects of magnesium (Mg) suppressor layer on the electrical performances and stabilities of amorphous indium-zinc-tin-oxide (a-ITZO) thin-film transistors (TFTs). Compared to the ITZO TFT without a Mg suppressor layer, the ITZO:Mg TFT exhibits slightly smaller field-effect mobility and much reduced subthreshold slope. The ITZO:Mg TFT shows improved electrical stabilities compared to the ITZO TFT under both positive-bias and negative-bias-illumination stresses. From the X-ray photoelectron spectroscopy O1s spectra with fitted curves for ITZO and ITZO:Mg films, we observe that Mg doping contributes to an enhancement of the oxygen bond without oxygen vacancy and a reduction of the oxygen bonds with oxygen vacancies. This result shows that the Mg can be an effective suppressor in a-ITZO TFTs.