Industry Promotion Research (산업진흥연구)

Industrial Promotion Institute (산업진흥원)
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Comparison between the Electrical Properties and Structures after Atmosphere Annealing and Vacuum Annealing of IGZO Thin Films

IGZO 박막 증착 후 진공과 대기 중에서 열처리한 후 결합구조와 전기적인 특성의 비교

  • Received : 2015.12.28
  • Accepted : 2016.01.11
  • Published : 2016.01.31
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Abstract

It was the electrical properties of IGZO prepared by the annealing in a vaccum and an atmosphere conditions to research the current-voltage characteristics. The IGZO film annealed in a vaccum became an amorphous structure but films annealed in an atmosphere condition had a crystal structure. Because of the content of oxygen vacancies during the annealing processes was changed, and the annealing in an atmosphere condition increased the oxygen vacancy in IGZO. Oxygen vacancy in IGZO increased the current and then it was observed the Ohmic contact at IGZO annealed in an atmosphere conditions. However, the IGZO prepared in a vaccum showed the Schottky contact.

IGZO의 접합특성을 조사하기 위해서 진공 중에서와 대기 중에서 열처리를 하여, 전지적인 특성을 조사하였다. 진공 중에서 열처리를 한 IGZO는 비정질특성을 나타내었지만 대기 중에서 열처리를 하면 결정질 특성을 가졌다. 열처하는 방법에 따라서 산소공공의 함량이 달라지기 때문이다. 대기 중에서 열처리를 하면 IGZO의 산소공공이 증가하였다. 산소공공은 전류를 증가시키고 따라서 대기 중에서 열처리를 한 IGZO는 오믹 접합을 나타내었다. 그러나 진공 중에서 열처리를 한 IGZO는 쇼키접합을 나타냈다.

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References

  1. Hong Woo Lee, Bong Seob Yang, Seungha Oh, Yoon Jang Kim, Hyeong Joon Kim. "The Properties of RF Sputtered Zinc Tin Oxide Thin Film Transistors at Different Sputtering Pressure". Journal of the Semiconductor & Display Technology,March 2014, Vol. 13, pp44-48 No. 1.
  2. Sung Hoon Oh, Sae Won Kang, Gun Hwan Lee, Woo Seok Jung, Pung Keun Song,"Effect of Annealing on the Electrical Property and Water Permeability of ZTO/GZO Double-layered TCO Films deposited by DC, RF Magnetron Co-sputtering", The Korean Institute of Surface Engineering, Vol. 45, pp34-45, 2012.
  3. Jong-Wook Kim, Chang-Su Hwang and Hong-Bae Kim. "The Transparent Semiconductor Characteristics of ZnO Thin Films Fabricated by the RF Magnetron Sputtering Method", Journal of the Semiconductor & Display Technology, Vol. 9, pp. 43-50, 2010.
  4. B. K. Lee and K. M. Lee, "Structural and Electrical Characteristics of IZO Thin Films Deposited on Flexible Substrate", The Journal of the Korean Institute of Electrical and Electronic Material Engineers, 10, pp. 39-44, 2011.
  5. Meng Yu and Jungyol Jo" Sputtering Growth of ZnO Thin-Film Transistor Using Zn Target" The Journal of the Korean Institute of Electrical and Electronic Material Engineers, September Vol. 13, pp. 35-38, 2014.
  6. Kyoungjin Kim and Joong-Youn Park" Effects of Forced Self Driving Function in Silicon Wafer Polishing Head on the Planarization of Polished Wafer Surfaces " The Journal of the Korean Institute of Electrical and Electronic Material Engineers, March 2014. Vol. 13,pp13-17 No. 1.
  7. Dukyean Yoo, Hyoungju Kim, Junyeong Kim and Jungyol Jo" Current Variation in ZnO Thin-Film Transistor under Different Annealing Conditions " Journal of the Semiconductor & Display Technology, Vol. 13, pp.63-66, 2014.
  8. Chu, M.C., Meena, J.S., Liu, P.T., Shieh, H.D., You, H.C., Tu, Y.W., Chang, F.C., and Ko, F.H., "Oxygen Plasma Functioning of Charge Carrier Density in Zinc Oxide Thin-Film Transistors," Applied Physics Express, Vol. 6, 076501, 2013. https://doi.org/10.7567/APEX.6.076501
  9. Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., and Hosono, H., "Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors," Journal of the Semiconductor & Display Technology Nature, Vol. 432, 488, 2004.
  10. Su-Kyeong Kwon and Kyu-Mann Lee" Electrical and Optical Characteristics of IZO Thin Films Deposited in Different Oxygen Flow Rate " Journal of the Semiconductor & Display Technology December Vol. 12, pp49-54, 2013.
  11. D. H. Hwang, H. H. Ahn, K. N. Hui, K. S. Hui, and Y. G. Son, "Effect of Oxygen Partial Pressure Contents on the Properties of Al-doped ZnO Thin Films Prepared by Radio Frequency Sputtering," J. Ceram. Proc. Res., Vol. 12, pp. 150-154, 2011.
  12. H. M. Kim and J. J. kim, "Heat Treatment Effects on the Electrical Properties of $In_2O_3$-ZnO Flms Prepared by RF-Magnetron Sputtering Method," J. Korean Vacuum Society, Vol. 14, pp. 238-244, 2005.