• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.96-100
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• 2023

We have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various O₂ flow rate. Experiments were carried out while varying the oxygen gas flow rate from 0sccm to 1.0sccm to see how the oxygen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 2125x10^-3 Ωcm when the IGZO film was deposited at RT and set up at 0.1sccm. As the oxygen vacancy rate decreased, the resistivity intended to increase. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

• Journal of the Korean Ceramic Society
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• v.46 no.2
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• pp.155-160
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• 2009

The reliability could be one of the essential properties for multilayer ceramic capacitor (MLCC) using in various electronic devices and the concentration and mobility of oxygen vacancy would play important role in the reliability. To investigate the migration behavior of oxygen vacancies, thermally stimulated depolarization current (TSDC) is adopted. In dielectric material of X5R MLCC, the TSD-Current peak observed around 150$^{\circ}C$ and 200$^{\circ}C$ which represented the migration of oxygen vacancy. Substituting Yttrium for Dysprosium in X5R MLCC showed higher migration activation energy and lower TSD current density.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.9-14
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• 2017

$ISnO_2$ thin films were prepared on p-type and n-type Si substrates to research the interface characteristics between $SnO_2$ and substrate. After the annealing processes, the amorphous structure was formed at the interface to make a Schottky contact. The O 1s spectra showed the bond of 530.4 eV as an amorphous structure, and the Schottky contact. The analysis by the deconvoluted spectra was observed the drastic variation of oxygen vacancies at the amorphous structure because of the depletion layer is directly related to the oxygen vacancy. $SnO_2$ thin film changed the electrical properties depending on the characteristics of substrates. It was confirmed that it is useful to observe the Schottky contact's properties by complementary using the XPS analysis and I-V measurement.

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.695-699
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• 2009

We studied the transfer of oxygen vacancy and proton in Y-doped BaZr$O_3$ (BYZ) using density functional theory (DFT). An oxygen vacancy was generated in the $2{\times}2{\times}2$ BYZ superstructure by replacing two Zr atoms with two Y atoms to satisfy the charge neutrality condition. The O vacancy transfer between the first and second nearest O atom sites from a Y atom showed the lowest activation energy barrier of 0.42 eV, compared to the other transfers between first and first, and second and second in the superstructure. Two protons were inserted in the structure by adding a proton and hydroxyl that were supplied by the dissociation of a water molecule. The two protons bonded to the first and second nearest O atoms were energetically the most favorable. The activation energy barrier for a proton transfer in the structure was 0.51 eV, when either proton transferred to its neighbor O atom. This value was well matched with the experimentally determined one.

• Bulletin of the Korean Chemical Society
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• v.15 no.8
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• pp.616-622
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• 1994

The oxidation of carbon monoxide by gaseous oxygen in the presence of a powdered $Nd_{1-x}Sr_xCoO_{3-y}$ solid solution as a catalyst has been investigated in the temperature range from 150$^{\circ}$C to 300$^{\circ}$C under various CO and $O_2$ partial pressures. The site of Sr substitution, nonstoichiometry, structure, and microstructure were studied by means of powder X-ray diffraction and infrared spectroscopy. The electrical conductivity of the solid solution has been measured at 300$^{\circ}$C under various CO and $O_2$ partial pressures. The oxidation rates have been correlated with 1.5-and 1.2-order kinetics with and without a $CO_2$ trap, respectively; first-and 0.7 order with respect to CO and 0.5-order to $O_2$. For the above reaction temperature range, the activation energy is in the range from 0.25 to 0.35 eV/mol. From the infrared spectroscopic, conductivity and kinetic data, CO appears essentially to be adsorbed on the lattice oxygens of the catalyst, while $O_2$ adsorbs as ions on the oxygen vacancies formed by Sr substitution. The oxygen vacancy mechanism of the CO oxidation and the main defect of $Nd_{1-x}Sr_xCoO_{3-y}$ solid solution are supported and suggested from the agreement between IR data, conductivities, and kinetic data.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.214.2-214.2
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• 2015

본 연구에서는 Zr을 첨가한 용액 공정 기반 ZTO:Zr 산화물 반도체 제작 및 열처리 온도에 따른 트랜지스터의 특성 변화를 분석하였다. Zn:Sn=4:7 비율로 고정하고, Zr (0~1%) 비율에 따른 도핑과 열처리 온도($350{\sim}550^{\circ}C$)를 가변하였다. 실험 결과, Zr의 비율이 증가할수록 전류와 이동도가 감소하였고, 문턱전압이 양의 방향으로 이동하는 것을 확인하였다. Zr는 SEP (Standard Electrode Potential)가 -1.45로 Zn (-0.76), Sn (-0.13) 보다 작아 금속과 산소의 결합을 증가시키며, 또한 밴드갭이 ~7 eV로 다른 금속 보다 높아 산소와 결합력이 높다. 이러한 요인은 산화물 내의 산소 원자 결함(Oxygen vacancy)을 감소시킨다. 반대로 열처리 온도가 높아질수록 탈 수산화(Dehydroxylation)로 인한 산소 원자 결함이 증가시켜, Zr 도핑 효과와 반대 경향을 보인다. 실험 결과를 통해 Zr:Zn:Sn=0.5:4:7의 비율과 $550^{\circ}C$ 열처리 조건에서 문턱전압과 이동도, 아문턱 스윙, 전류 온오프 비(Ion/Ioff)가 각각 0.68V, $0.18cm^2/Vs$, 1.06 V/dec, $1.6{\times}10.6$의 특성을 확인하였다.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.145-148
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• 2016

This paper, Al-doped ZnO(AZO) thin films for application as transparent conducting oxide films were deposited on the Corning glass substrate by using RF magnetron sputtering system. The effects of various Argon gas flow rates on optical and electrical characteristics of AZO films were investigate sputtering method. The Carrier Concentration is enhanced as Ar gas rate increases, and also the oxygen vacancy concentration. The figure of merit obtained in this study means that AZO films which deposited Ar gas rate of 75 sccm have the highest Carrier concentration and Hall mobility, which have the highest photoelectrical performance that it could be used as transparent electrodes.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.05a
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• pp.29.1-29.1
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• 2008

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.5-16
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• 1991

It was grown Cubic $ZrO_2(10 mol% Y_2O_3)$ single crystals doped with 1 wt% rare earth metal oxides (RE=Ce, Pr, Nd, Eu, Er) by Skull method. It was investigated electrical properties on (111) plane of grown single crystals by Impedance Spectroscopy. It was potted relation between temperature and electrical conductivities and observed the transition at $약300-400^{\circ}$ It was obtained activation energy on the migration of oxygen vacancy between low temperature (before the transition) and high temperature (after the transition till ${\11}500^{\circ}$) and its difference can be seen the activation energy of the formation of oxygen vacancies by break up defect complexes. It was obtained the activation energy according as add yttria and rare earth metal oxides and discussed ionic conduction mechanism. Grown single crystals showed Ce: orange - red, Pr: golden - yellow, Nd: lilac, Eu: light pink, Er: pink due to dopant effect from the light absorption data in the visible range.

• Journal of Sensor Science and Technology
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• v.22 no.4
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• pp.244-248
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• 2013

The discovery of a two-dimensional electron gas (2DEG) in $LaAlO_3$ (LAO)/$SrTiO_3$ (STO) heterostructure has stimulated intense research activity. We suggest a new structure model based on $KNbO_3$ (KNO) material. The KNO thin films were grown on $TiO_2$-terminated STO substrates as a p-type structure ($NbO_2/KO/TiO_2$) to form a two-dimensional hole gas (2DHG). The STO thin films were grown on KNO/$TiO_2$-terminated STO substrates as an n-type structure to form a 2DEG. Oxygen pressure during the deposition of the KNO and STO thin films was changed so as to determine the effect of oxygen vacancies on 2DEGs. Our results showed conducting behavior in the n-type structure and insulating properties in the p-type structure. When both the KNO and STO thin films were deposited on a $TiO_2$-terminated STO substrate at a low oxygen pressure, the conductivity was found to be higher than that at higher oxygen pressures. Furthermore, the heterostructure formed at various oxygen pressures resulted in structures with different current values. An STO/KNO heterostructure was also grown on the STO substrate, without using the buffered oxide etchant (BOE) treatment, so as to confirm the effects of the polar catastrophe mechanism. An STO/KNO heterostructure grown on an STO substrate without BOE treatment did not exhibit conductivity. Therefore, we expect that the mechanics of 2DEGs in the STO/KNO heterostructures are governed by the oxygen vacancy mechanism and the polar catastrophe mechanism.