• Corrosion Science and Technology
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• v.7 no.3
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• pp.145-151
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• 2008

Material degradation such as high temperature oxidation of metallic material is a severe problem in energy generation systems or manufacturing industries. The metallic materials are oxidized to form oxide films in high temperature environments. The oxide films act as diffusion barriers of oxygen and metal ions and thereafter decrease oxidation rates of metals. The metal oxidation is, however, accelerated by mechanical fracture and spalling of the oxide films caused by thermal stresses by repetition of temperature change, vibration and by the impact of solid particles. It is therefore very important to investigate mechanical properties and adhesion of oxide films in high temperature environments, as well as the properties in a room temperature environment. The oxidation tests were conducted for Ni and Ni-Co alloy under high temperature corrosive environments. The hardness distributions against the indentation depth from the top surface were examined at room temperature. Dynamic indentation tests were performed on Ni oxide films formed on Ni surfaces at room and high temperature to observe fractures or cracks generated around impact craters. As a result, it was found that the mechanical property as hardness of the oxide films were different between Ni and Ni-Co alloy, and between room and high temperatures, and that the adhesion of Ni oxide films was relatively stronger than that of Co oxide films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.79-82
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPRM was investigated by AES and AFM. Second derivative spectra of AES Si LVV overlapping peak provided useful information for chemical state analysis of superthin film. The ONO films with dimension of tunneling oxide 24${\AA}$, nitride 33${\AA}$, and blocking oxide 40${\AA}$ were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/O-rich SiON(interface/N-rich SiON(nitride)/-rich SiON(interface)/N-rich SiON(nitride)/O-rich SiON(tunneling oxide).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.99-102
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• 2003

Tin dioxide thin films were deposited at $375^{\circ}C$ on alumina substrate by metal-organic chemical vapor deposition process to find the relationship between physicochemical properties and the annealing treatments. The small grains with heat treatments grew to the bunch of grains and then showed the hillocks on the film surface. The thickness decreased with annealing treatment. The measured binding energy (BE) and branching ratio of the Sn 3d spin-orbital doublet were typical of oxidized states of Sn and the BE of the O1s core level of about 530~530.65eV also confirmed the presence of O-Sn bonds. The BE of oxygen and tin with annealing treatment shifted to higher position. O/Sn atomic ratios of films deposited at $375^{\circ}C$ for 2min and 4min were 1.99 and 2.01, respectively. The value of the atomic ratio O/Sn of films deposited at $375^{\circ}C$ for 2min changed from 1.99 to 2.45 with annealing treatment. Gas sensitivity depended on annealing temperature, the sensitivity increased with increasing annealing temperature.

• Journal of Energy Engineering
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• v.25 no.2
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• pp.65-78
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• 2016

Initial studies of the photocatalyst has been developed from the field relating to the conversion and storage of solar energy. Recently, the study of the various organic decomposition compound and the water purification and waste water treatment by ultraviolet irradiation in the presence of light or a photocatalyst are being actively investigated. In addition, the oxidized material-carbon nanotubes, graphene-nanocomposites have been studied. Such a complex is suitable as a material constituting the solar cells and photolysis nanoelectronics, including the flexible element due to thermal and chemical stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.357-358
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• 2007

Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 m poly 3C-SiC grown at 1180 C occurred at 794.4 and $965.7\;cm^{-1}$. Their FWHMs (full width half maximum) were used to investigate the stress and the disorder of 3C-SiC. The broad FWHM can explain that the crystallinity of 3C-SiC grown at 1180 C becomes poly crystalline instead of the disordered crystal. The ratio of intensity $I_{(LO)}/I_{(TO)}$ 1.0 means that the crystal defect of 3C-SiC/$SiO_2$/Si is small. The biaxial stress of poly 3C-SiC was obtained as 428 MPa. In the interface of 3C-SiC/$SiO_2$, the phonon mode of C-O bonding appeared at $1122.6\;cm^{-1}$. The phonon modes related to D and G bands of C-C bonding were measured at 1355.8 and $1596.8\;cm^{-1}$ respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.177-182
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• 2013

Transparent thin film transistors (TTFT) were fabricated on $N^+$ Si wafers. $SiO_2$, $Si_3N_4/SiO_2$ and $Al_2O_3/SiO_2$ grown on the wafers were used as gate insulators. The rf magnetron sputtered zinc tin oxide (ZTO) films were adopted as active layers. $N^+$ Si wafers were wet-oxidized to grow $SiO_2$. $Si_3N_4$ and $Al_2O_3$ films were deposited on the $SiO_2$ by plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD), respectively. The mobility, $I_{on}/I_{off}$ and subthreshold swing (SS) were obtained from the transfer characteristics of TTFTs. The properties of gate insulators were analyzed by comparing the characteristics of TTFTs. The property variation of the ZTO TTFTs with time were observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.26-28
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• 2005

In this paper, degradation in field-aged PV modules including degradation of interconnect, discoloration of encapsulant and hot spot have been observed and analyzed. From the results, photovoltaic module installed for 15 years shows around 13~20% drop of electrical properties due to the interconnect degradation and PV module passed 19 years has been found to drop of around 20% mainly by the encapsulant discoloration. Fill factor of the electrode oxidized photovoltaic module has been dropped by the amount of 6~10% due to the change of irradiance. It is because maximum voltage(Vmp) decreases according to the increase of irradiance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.376-377
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• 2006

This paper presents the characteristics of Ta-N thin film strain gauges that are suitable for harsh environemts, which were deposited on thermally oxidized Si substrates by DC reactive magnetronsputtering in an argon-nitrogen atmosphere (Ar-$N_2$ (4 ~ 16 %)). These films were annealed for 1 hr in $2{\times}10^{-6}$ Torr in a vacuum furnace with temperatures that ranged from 500 - $1000^{\circ}C$. The optimized deposition and annealing conditions of the Ta-N thin film strain gauges were determined using 8 % $N_2$ gas flow ratio and annealing at $900^{\circ}C$ for 1 hr. Under optimum formation conditions, the Ta-N thin film strain gauges obtained a high electrical resistivity, ${\rho}\;=\;768.93\;{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance, $TCR\;=\;-84\;ppm/^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12. The fabricated Ta-N thin film strain gauges are expected to be used inmicromachined pressure sensors and load cells that are operable under harsh environments.

• Journal of Magnetics
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• v.2 no.1
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• pp.16-21
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• 1997

Those were investigated, the crystallographic, morphological, and magnetic properties of barium ferrite film (SiO2/Si substrate) prepared by sol-gel dip coating. Appropriate sol was prepared by dissolvin barium and iron nitrate in ethylene glycol at 80$^{\circ}C$. To obtain the films, thermally oxidized p-type silicon substrate with (111) of crystallographic orientation were dipped into the sol, dried at 250$^{\circ}C$ to remove organic material, and heated at 800$^{\circ}C$ for 3 hours in air for the crystallization of barium ferrite. It was found that the particles of barium ferrite formed on the substrate exhibited needle-like shape placing parallel to the substrate and its c-axis is long axis direction. There was tendency that the coercive force in horizontal direction to the substrate was higher than that in vertical direction to it. This tendency was profound in large thickness.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.125-129
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• 2013

Composites of platinum and multiwalled carbon nanotubes (MWNTs) were prepared in various reduction conditions and characterized using cyclic voltammetry. The MWNTs were functionalized with carboxylic acid and/or hydroxyl groups in acidic solutions prior to the formation of MWNT-Pt composites. Platinum nanoparticles were deposited onto the chemically-oxidized MWNTs in 1-propanol and 1,3-propanediol. The reduction of Pt precursors in other solutions could induce differences in their morphologies in composite thin films. The morphologies of MWNTs with Pt deposited were dependent on the reduction solutions, and the electrocatalytic activities on alcohols changed accordingly. The electrochemical activities of the as-prepared MWNT-Pt thin films on common alcohols such as methanol and ethanol were investigated.