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http://dx.doi.org/10.4313/JKEM.2013.26.3.177

Effects of Gate Insulators on the Operation of ZnO-SnO2 Thin Film Transistors  

Cheon, Young Deok (Department of Electrical Engineering and ERI, Gyeongsang National University)
Park, Ki Cheol (Department of Semiconductor Engineering and ERI, Gyeongsang National University)
Ma, Tae Young (Department of Electrical Engineering and ERI, Gyeongsang National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.3, 2013 , pp. 177-182 More about this Journal
Abstract
Transparent thin film transistors (TTFT) were fabricated on $N^+$ Si wafers. $SiO_2$, $Si_3N_4/SiO_2$ and $Al_2O_3/SiO_2$ grown on the wafers were used as gate insulators. The rf magnetron sputtered zinc tin oxide (ZTO) films were adopted as active layers. $N^+$ Si wafers were wet-oxidized to grow $SiO_2$. $Si_3N_4$ and $Al_2O_3$ films were deposited on the $SiO_2$ by plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD), respectively. The mobility, $I_{on}/I_{off}$ and subthreshold swing (SS) were obtained from the transfer characteristics of TTFTs. The properties of gate insulators were analyzed by comparing the characteristics of TTFTs. The property variation of the ZTO TTFTs with time were observed.
Keywords
Transparent thin film transistors; Zinc tin oxide; Gate insulators; Mobility; Sunthreshold swing;
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