• 한국산학기술학회논문지
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• 제10권7호
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• pp.1489-1496
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• 2009

비정질 인듐-갈륨-아연 산화물 박막트랜지스터를 모델링 하여서, 능동층의 구조, 두께, 평형상태의 전자밀도에 대응하는 박막트랜지스터의 특성을 연구하였다. 단일 능동층 박막트랜지스터의 경우, 능동층이 얇을 때 높은 전계효과이동도를 보였다. 문턱전압의 절대값은 능동층의 두께가 20 nm일 때 최저치를 보였으며, 문턱전압이하 기울기는 두께에 대한 의존성을 보이지 않았다. 복층구조 능동층의 경우, 하부의 능동층이 높은 평형상태 전자밀도를 가질 때보다 우수한 스위칭 특성을 보였다. 이 경우에도 능동층의 두께가 얇을 때에 높은 전계효과 이동도를 보였다. 높은 평형상태 전자밀도의 능동층의 두께를 증가시키면 문턱전압은 음의 방향으로 이동하였다. 문턱전압이하 기울기는 능동층의 구조에 대하여 특별한 의존성을 보이지 않았다. 이상과 같은 데이터는 산화물반도체 박막트랜지스터 능동층의 구조, 두께, 도핑비율을 최적화함에 효과적으로 사용될 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.222-222
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• 2010

Transparent semiconductor oxide thin films have been attracting considerable attention as potential channel layers in thin film transistors (TFTs) owing to their several advantageous electrical and optical characteristics such as high mobility, high stability, and transparency. TFTs with ZnO or similar metal oxide semiconductor thin films as the active layer have already been developed for use in active matrix organic light emitting diode (AMOLED). Of late, there have been several reports on TFTs fabricated with InZnO, AlZnSnO, InGaZnO, or other metal oxide semiconductor thin films as the active channel layer. These newly developed TFTs were expected to have better electrical characteristics than ZnO TFTs. In fact, results of these investigations have shown that TFTs with the new multi-component material have excellent electrical properties. In this work, we present TFTs with inverted coplanar geometry and with a novel HfInZnO active layer co-sputtered at room temperature. These TFTs are meant for use in low voltage, battery-operated mobile and flexible devices. Overall, the TFTs showed good performance: the low sub-threshold swing was low and the $I_{on/off}$ ratio was high.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권5호
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• pp.526-532
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• 2015

We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}=13V$and $V_{DS}=13V$), the parallel shift of the transfer curve into a negative $V_{GS}$ direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (${\Delta}V_T$), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ${\Delta}V_T$ were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy ($V{_O}^{2+}$). In addition, it was also confirmed that the wider channel width corresponds with more negative ${\Delta}V_T$. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.

• 마이크로전자및패키징학회지
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• 제26권3호
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• pp.59-62
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• 2019

본 논문은 용액공정용 불소 도핑된 인듈 갈륨 징크 산화물 반도체를 연구하였으며, 박막 트랜지스터 적용 가능성을 확인하였다. 용액형 산화물 반도체를 형성하기 위해, 금속염 전구체 기반 용액을 제조하였으며, 추가적인 불소 도핑을 유도하기 위해 화학적 첨가제로서 암모늄 플로라이드를 이용하였다. 열처리 온도 및 불소 도핑양에 따른 전기적 물성을 고찰함으로서, 300도 저온 열처리를 통해 제조된 산화물 반도체층의 전기적 특성을 향상시켰다. 20 mol% 불소를 도핑하는 경우, $1.2cm^2/V{\cdot}sec$의 이동도 및 $7{\times}10^6$의 점멸비 특성이 발현 가능함을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1582-1585
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• 2009

The effects of bias stress on spin-coated zinc tin oxide (ZTO) transistors are investigated. Applying a positive bias stress results in the displacement of the transfer curves in the positive direction without changing the field effect mobility or the subthreshold behavior. Device instability appears to be a consequence of the charging and discharging of temporal trap states at the interface and in the zinc tin oxide channel region.

• 한국전기전자재료학회논문지
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• 제26권4호
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• pp.275-277
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• 2013

Thin-film transistors(TFTs) with silicon zinc tin oxide(SZTO) channel layer are fabricated by solution-process. The threshold voltage ($V_{th}$) shifted toward positive directly with increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than Sn, Zn, thus degenerate the oxygen vacancy (VO). As a result, the Si act as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.142.1-142.1
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• 2018

This research presents a new field effect transistor (FET) by using liquid crystal gate dielectric with remote gate. The fabrication of thin-film transistors (TFTs) was used Indium tin oxide (ITO) for the source, drain, and gate electrodes, and indium gallium zinc oxide (IGZO) for the active semiconductor layer. 5CB liquid crystal was used for the gate dielectric material, and the remote gate and active layer were covered with the liquid crystal. The output and transfer characteristics of the LC-gated TFTs were investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.571-574
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• 2009

Metal oxide/metal bilayer structures are explored as contacts with a low injection barrier in organic thin-film transistors (OTFTs) in an effort to realize their true potential for low-cost electronics. OTFTs with a bilayer electrode of $WO_3$ (10nm) and Al shows a saturation mobility as large as 0.97 $cm^2$/Vsec which are comparable to those of Au-based control samples (~0.90 $cm^2$/Vsec). Scaling of contact resistance with respect to the thickness of $WO_3$ layer is also discussed.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.18.2-18.2
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• 2010

For the past a few years, we have intensively researched the printable inorganic conductors and ZnO-based amorphous oxide semiconductors (AOSs) for thin-film transistors. For printable conductor materials, we have focused on the aqueous Ag and Cu ink which possess a variety of advantages, comparing with the conventional metal inks based on organic solvent system. The aqueous Ag ink was designed to achieve the long-term dispersion stability using a specific polymer which can act as a dispersant and capping agent, and the aqueous Cu ink was carefully formulated to endow the oxidation stability in air and even aqueous solvent system. The both inks were successfully printed onto either polymer or glass substrate, exhibiting the superior conductivity comparable to that of bulk one. For printable ZnO-based AOSs, we have researched the noble way to resolve the critical problem, a high processing-temperature above $400^{\circ}C$, and recently discovered that Ga doping in ZnO-based AOSs promotes the formation of oxide lattice structures with oxygen vacancies at low annealing-temperatures, which is essential for acceptable thin-film transistor performance. The mobility dependence on annealing temperature and AOS composition was analyzed, and the chemical role of Ga are clarified, as are requirements for solution-processed, low-temperature annealed AOSs.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.371-375
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• 2019

Developing a thin-film transistor with characteristics such as a large area, high mobility, and high reliability are key elements required for the next generation on displays. In this paper, we have investigated the research trends related to improving the reliability of oxide-semiconductor-based thin-film transistors, which are the primary focus of study in the field of optical displays. It has been reported that thermal treatment in a high-pressure oxygen atmosphere reduces the threshold voltage shift from -7.1 V to -1.9 V under NBIS. Additionally, a device with a $SiO_2/Si_3N_4$ dual-structure has a lower threshold voltage (-0.82 V) under NBIS than a single-gate-insulator-based device (-11.6 V). The dual channel structure with different oxygen partial pressures was also confirmed to have a stable threshold voltage under NBIS. These can be considered for further study to improve the NBIS problem.