한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제26권4호
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  • Pages.275-277
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  • 2013
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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산화물반도체 박막트랜지스터 제작 및 전기적 특성 분석

Fabrication and Charaterization of Oxide Thin Film Transistor

  • 이상렬 (청주대학교 반도체공학과)
  • Lee, Sang Yeol (Department of Semiconductor Engineering, Cheongju University)
  • 투고 : 2013.03.13
  • 심사 : 2013.03.24
  • 발행 : 2013.04.01
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초록

Thin-film transistors(TFTs) with silicon zinc tin oxide(SZTO) channel layer are fabricated by solution-process. The threshold voltage ($V_{th}$) shifted toward positive directly with increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than Sn, Zn, thus degenerate the oxygen vacancy (VO). As a result, the Si act as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller.

키워드

참고문헌

  1. B. D. Ahn, J. H. Kim, H. S. Kang, C. H. Lee, S. H. Oh, K. W. Kim, G. E. Jang, and S. Y. Lee, Thin Solid Films, 516, 1382 (2008). https://doi.org/10.1016/j.tsf.2007.03.072
  2. S. Y. Lee, Y. W. Song, and S. P. Chang, J. KIEEME, 21, 3 (2008).
  3. E. Fortunato, A. Pimentel, A. Goncalves, A. Marques, and R. Martins, Thin Solid Films, 502, 104 (2006). https://doi.org/10.1016/j.tsf.2005.07.311
  4. S. Y. Lee, Y. W. Song, and S. P. Chang, J. of IEEK 35, 60 (2008).
  5. Y. K. Moon, S. Lee, W. S. Kim, B. W. Kang, C. O. Jeong, D. H. Lee, and J. W. Park, Appl. Phys. Lett., 95 (2010).
  6. J. P. Chang, Y. S. Lin, S. Berger, A. Kepten, R. Bloom, and S. Levy, J. Vac. Sci. Technol. B, 19, 2137 (2001). https://doi.org/10.1116/1.1415513
  7. Y. J Chang, D. H. Lee, G. S. Herman, and C. H. Chang, Electrochem. Solid-State Lett., 10, H135 (2007). https://doi.org/10.1149/1.2666588
  8. E. Fortunato, A. pimentel, A. Goncalve, A. Marques, and R. Martins, Thin Solid Film, 502, 104 (2006). https://doi.org/10.1016/j.tsf.2005.07.311
  9. G. H. Kim, W. H. Jeong, B. D. Ahn, H. S. Shin, H. J. Kim, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, Appl. Phys. Lett., 96, 163506 (2010). https://doi.org/10.1063/1.3413939
  10. J. Y. Choi, S. S. Kim, and S. Y. Lee, Appl. Phys. Lett., 100, 1 (2012).

피인용 문헌

  1. Improvement in the Performance of Sol–Gel Processed In2O3 Thin-Film Transistor Depending on Sb Dopant Concentration vol.38, pp.8, 2017, https://doi.org/10.1109/LED.2017.2715374