• Korean Journal of Food Science and Technology
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• v.47 no.3
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• pp.394-400
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• 2015

This study aimed to investigate the anti-atopic effect of hot water (PPWE) and supercritical-carbon dioxide fluid extract of persimmon peels (SPPE) on atopic dermatitis (AD)-like skin lesions in hairless mice. Histological analyses demonstrated that SPPE treatment more strongly inhibited the dermal infiltration of inflammatory cells in AD-like skin lesions than that by PPWE. Compared to PPWE, SPPE significantly decreased the dermatitis clinical score and the epidermal thickness and potently suppressed serum IgE and interleukin (IL)-4 production in hairless mice with AD. Furthermore, compared to PPWE, SPPE potently inhibited the production of nitric oxide, prostaglandin $E_2$, and proinflammatory cytokines such as IL-6 and IL-$1{\beta}$ in lipopolysaccharide-stimulated RAW264.7 macrophages. These results suggested that SPPE exhibited anti-atopic dermatitis activity via the regulation of inflammatory responses.

• The Journal of Korean Academy of Prosthodontics
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• v.44 no.3
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• pp.343-355
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• 2006

Statement of problem. The success of osseointegration can be enhanced with an implant that has improved surface characteristics. Anodic oxidation is one of the surface modifying method to achieve osseointegration. Voltage of anodic oxidation can change surface characteristics and cell activity Purpose. This study was performed to evaluate MG63 cell responses such as affinity, proliferation and to compare surface characteristics of anodic oxidized titanium in various voltage. Material and method. The disks for cell culture were fabricated from grade 3 commercially pure titanium,1 m in thickness and 12 mm in diameter. Surfaces of 4 different roughness were prepared. Group 1 had a machined surface, used as control. Group 2 was anodized under 220 V, group 3 was anodized under 300 V and group 4 was anodized under 320 V. The microtopography of specimens was observed by scanning electron microscope (JSM-840A, JEOL, Japan) and atomic force microscope(Autoprobe CP, Park Scientific Instrument, USA). The surface roughness was measured by confocal laser scanning microscope(Pascal, LSM5, Zeiss, Germany). The crystal structure of the titanium surface was analyzed with x-ray diffractometer(D8 advanced, Broker, Germany). MG63 osteoblast-like cells were cultured on these specimens. The cell morpholgy was observed by field emission electron microscope(Hitachi S-4700, Japan). The cell metabolic and proliferative activity was evaluated by MTT assay Results and conclusion. With in limitations of this in vitro study, the following conclusions were drawn. 1. In anodizing titanium surface, we could see pores which did not show in control group. In higher anodizing voltage, pore size was increased. 2. In anodizing titanium surface, we could see anatase. In higher anodizing voltage, thicker oxide layer increased crystallinity(anatase, anatase and rutile mixed). 3. MG63 cells showed more irregular, polarized and polygonal shape and developed more lamellipodi in anodizing group as voltage increased. 4. The activity of cells in MTT assay increased significantly in group 3 and 4 in comparison with group 1 and 2. However, there was no difference between group 3 and 4 at P<0.05. Proliferation of MG63 cells increased significantly in pore size($3-5.5{\mu}m$) of group 3 and 4 in comparison with in pore size($0.2-1{\mu}m$ ) of group 2.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.649-656
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• 2002

In situ patterned zinc oxide thin films were prepared by precipitation of Zn(NO$_3$)$_2$ aqueous solution containing urea and by microcontact printing using Self-Assembled Monolayers(SAMs) on A1/SiO$_2$/Si substrates. The visible precipitation of Zn(OH)$_2$ that was formed in the Zn(NO$_3$)$_2$ aqueous solution containing urea was enhanced with an increase of the reaction temperature and the amount of urea. As the reaction time of Zn(NO$_3$)$_2$ with urea was prolonged, the thickness and grain size of Zn(OH)$_2$ thin layers were increased, respectively. The optimum precipitation condition was at 80$\^{C}$ for 1 h for the solution with the ratio of Zn(NO$_3$)$_2$ to urea of 1 : 8. Homogeneous ZnO thin films were fabricated by the heat treatment of 600$\^{C}$ for 1 h of Zn(OH)$_2$ precipitation on Al/SiO$_2$/Si substrate. This was available to the in-situ patterned ZnO thin films with uniform grain size. Hydrophobic SAM, Octadecylphosphonic Acid(OPA) and hydrophilic SAM, 2-Carboxyethylphosphonic Acid(CPA) were applied on the Al/SiO$_2$/Si substrate by microcontact printing method. In situ patterned ZnO thin film was successfully prepared by the heat treatment of Zn(OH)$_2$ precipitated on the surface of hydrophilic SAM, CPA.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.538-544
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• 1998

The spallation of a thermal barrier coating layer depends on the formation of brittle spinels. thermal expansion mismatch between ceramic and metal. the phase transformation of a ceramic layer and residual stress of coating layer. In this work. the formation mechanism of oxide scale formed by oxidation treatment at 90$0^{\circ}C$ was investigated in order to verify oxidation behavior at the interface between E-beam coated $Zr0_2$-7wt.% $Y_20_3$ and plasma sprayed CoNiCrAIY. Some elements distributed in the bond coating layer were selectively oxidized after oxidation. At the initial time of oxidation. AI-depletion zone and $\alpha$-$Al_O_3$,O, were formed at the bond coating layer by the AI-outward diffusion. After layer grew until critical thickness. spinels. $Cr_20$, and $C0_2CrO_4$ by outward diffusion of Co. Cr, Ni were formed. It was found that the formation of spinels may be related to the spallation of $Zr0_2$-7wt.% $Y_20_3$ during isothermal oxidation.

• Imaging Science in Dentistry
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• v.48 no.2
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• pp.97-101
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• 2018

Purpose: This study evaluated the radiopacity of contemporary luting cements using conventional and digital radiography. Materials and Methods: Disc specimens (N=24, n=6 per group, ø$7mm{\times}1mm$) were prepared using 4 resin-based luting cements (Duolink, Multilink N, Panavia F 2.0, and U-cem). The specimens were radiographed using films, a complementary metal oxide semiconductor (CMOS) sensor, and a photostimulable phosphor plate (PSP) with a 10-step aluminum step wedge (1 mm incremental steps) and a 1-mm-thick tooth cut. The settings were 70 kVp, 4 mA, and 30 cm, with an exposure time of 0.2 s for the films and 0.1 s for the CMOS sensor and PSP. The films were scanned using a scanner. The radiopacity of the luting cements and tooth was measured using a densitometer for the film and NIH ImageJ software for the images obtained from the CMOS sensor, PSP, and scanned films. The data were analyzed using the Kruskal-Wallis and Mann-Whitney U tests. Results: Multilink (3.44-4.33) showed the highest radiopacity, followed by U-cem (1.81-2.88), Panavia F 2.0 (1.51-2.69), and Duolink (1.48-2.59). The $R^2$ values of the optical density of the aluminum step wedge were 0.9923 for the films, 0.9989 for the PSP, 0.9986 for the scanned films, and 0.9266 for the CMOS sensor in the linear regression models. Conclusion: The radiopacities of the luting materials were greater than those of aluminum or dentin at the same thickness. PSP is recommended as a detector for radiopacity measurements because of its accuracy and convenience.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• The Journal of Korean Academy of Prosthodontics
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• v.41 no.3
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• pp.300-318
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• 2003

Statement of problem: The success of implants depends on intimate and direct contact of implant material on bone tissue and on functional relationship with soft tissue contact. Creation and maintenance of osseointegration depend on the understanding of the tissue's healing, repairing, and remodeling capacity and these capacities rely on cellular behavior. Altering the surface properties can modify cellular responses such as cell adhesion, cell motility, bone deposition, Therefore, various implant surface treatment methods are being developed for the improved bone cell responses. Purpose: The purpose of this study was to evaluate the responses of osteoblast-like cells to surface-modified titanium. Materials and Methods: The experiment was composed of four groups. Group 1 represented the electropolished surface. Group 2 surfaces were machined surface. Group 3 and Group 4 were anodized surfaces. Group 3 had low roughness and Group 4 had high roughness. Physicochemical properties and microstructures of the discs were examined and the responses of osteoblast-like cells to the discs were investigated. The microtopography was observed by SEM. The roughness was measured by three-dimension roughness measuring system. The microstructure was analyzed by XRD, AES. To evaluate cell responses to modified titanium surfaces, osteoblasts isolated from calvaria of neonatal rat were cultured. Cell count, morphology, total protein measurement and alkaline phosphatase activities of the cultures were examined. Results and Conclusion: The results were as follows 1. The four groups showed specific microtopography respectively. Anodized group showed grain structure with micropores. 2. Surface roughness values were, from the lowest to the highest, electropolished group, machined group, low roughness anodized group, and high roughness anodized group. 3. Highly roughened anodized group was found to have increased surface oxide thickness and surface crystallinity. 4. The morphology of cells, flattened or spherical, were different from each other. In the electropolished group and machined group, the cells were almost flattened. In two anodized groups, some cells were spherical and other cells were flattened. And the 14 day culture cells of all of the groups were nearly flattened due to confluency. 5. The number of attached cells was highest in low roughness anodized group. And the machined group had significantly lower cell count than any other groups(P<.05). 6. Total protein contents showed no difference among groups. 7. The level of alkaline phosphatase activities was higher in the anodized groups than electropolished and machined groups(P<.05).

• Journal of Dental Rehabilitation and Applied Science
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• v.16 no.3
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• pp.197-210
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• 2000

Surface roughness is one of implant surface topography and it's found that surface roughness characterizations, such as surface energy, oxide layer thickness and its chemical composition, are closely correlated if the roughness is changed. Several studies showed the importance of analyzing surface structure so the surface structure of thread implant was analyzed to measure the implant quality exactly. In this study, surface roughness of 4 implants - MK $II^{(R)}$(Nobel Biocare), $RBM^{(R)}$(Life-Core, USA), $Osseotite^{(R)}$(3i, USA), $TPS^{(R)}$(Life-Core, USA) - were measured using $Accura^{(R)}$ and 40 implants were installed into 4 sets of ten bovine ribs based on the parameters from the measurements. From this test, the following conclusions for the initial stability were drawn by measuring and comparing RFA, Periotest Value (PTV), Removal Torgue Value (RTV). 1. $R_a$ value in surface roughness measurement was increasing by the order of $MKII^{(R)}$, $Osseotite^{(R)}$, $RBM^{(R)}$, $TPS^{(R)}$ and $R_q$ value was the same order. 2. $R_q$ value in each section was observed to increase by the order of $MKII^{(R)}$, $Osseotite^{(R)}$, $RBM^{(R)}$, $TPS^{(R)}$ in top and $MKII^{(R)}$, $RBM^{(R)}$, $Osseotite^{(R)}$, $TPS^{(R)}$ in mid-section but the value of $MKII^{(R)}$ bottom was the lowest, followed by $Osseotite^{(R)}$, $RBM^{(R)}$ and $TPS^{(R)}$. 3. RFA increased by the order of $RBM^{(R)}$(7042Hz), $MKII^{(R)}$(7047Hz), $Osseotite^{(R)}$(7076Hz), $TPS^{(R)}$(7168Hz) and there was no significance between each group. 4. PTV was increasing by the order of $MKII^{(R)}$(-1.62), $TPS^{(R)}$(-1.92), $Osseotite^{(R)}$ & $RBM^{(R)}$(-2.08) and there was no significance, either. 5. Removal torque in RTV measurement showed the increasing order of $MKII^{(R)}(5.31kgf{\cdot}cm)$, $Oeeotite^{(R)}(5.71kgf{\cdot}cm)$, $TPS^{(R)}(5.92kgf{\cdot}cm)$ and $RBM^{(R)}(7.24kgf{\cdot}cm)$ and there was no significance among groups. Above observations explains that surface roughness does not make any impact on the initial stability of implants installation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.430-430
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• 2007

In general, polyimides (PIs) are used in liquid crystal displays (LCDs) as alignment layer of liquid crystals (LCs). Up to date, the rubbing alignment technique has been widely used to align liquid crystals on the PI surface, which is suitable for mass-production of LCDs because of its simple process and high productivity. However, this method has some disadvantages. Rubbed PI surfaces include the debris left by the cloth and the generation of electrostatic charges during rubbing process. Therefore, rubbing-free techniques for LC alignment are strongly required in LCD technology. In this experiment, PI was uniformly coated on indium-tin-oxide electrode substrates to form LC alignment layers using a spin-coating method and the PI layers were subsequently imidized at 433 K for 1 h. The thickness of the PI layer was set at 50 nm. The LC alignment layer surfaces were exposed to an $Ar^+$ ion-beam under various ion-beam energies. The antiparallel cells and twisted-nematic (TN) cells for the measurement of pretile angle and electro-optical characteristics were fabricated with the cell gap of 60 and $5\;{\mu}m$, respectively. The LC cells were filled with nematic LC (NLC, MJ001929, Merck) and were assembled. The NLC alignment capability on ion-beam-treated PI was observed using photomicroscope and the pretilt angle of the NLC was measured by the crystal-rotation method at room temperature. Voltage-transmittance (V-T) and response time characteristics of the ion-beam irradiated TN cell were measured by a LCD evaluation system.