• Proceedings of the Materials Research Society of Korea Conference
• /
• 1999.05a
• /
• pp.14-14
• /
• 1999

• Proceedings of the Korean Vacuum Society Conference
• /
• 2002.06a
• /
• pp.118-118
• /
• 2002

• Journal of the Korean Ceramic Society
• /
• v.52 no.1
• /
• pp.72-76
• /
• 2015

150-nm-thick In-Zn-Tin-Oxide (IZTO) films were deposited by RF magnetron sputtering after a 10 to 50-nm-thick $SiO_2$ buffer layer was deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) substrates. The electrical, structural, and optical properties of the IZTO/$SiO_2$/PET films were analyzed with respect to the thickness of the $SiO_2$ buffer layer. The mechanical properties were outstanding at a $SiO_2$ thickness of 50 nm, with a resistivity of $1.45{\times}10^{-3}{\Omega}-cm$, carrier concentration of $8.84{\times}10^{20}/cm^3$, hall mobility of $4.88cm^2/Vs$, and average IZTO surface roughness of 12.64 nm. Also, the transmittances were higher than 80%, and the structure of the IZTO films were amorphous, regardless of the $SiO_2$ thickness. These results indicate that these films are suitable for use as a transparent conductive oxide for transparency display devices.

• Journal of the Korean Ceramic Society
• /
• v.56 no.2
• /
• pp.130-145
• /
• 2019

Widespread commercialization of solid oxide fuel cells (SOFCs) is expected to be realized in various application fields with the advent of cost-effective fabrication of cells and stacks in high volumes. Cost-reduction efforts have focused on production yield, power density, operation temperature, and continuous manufacturing. In this article, we examine several issues associated with processing for SOFCs from the standpoint of the bimodal packing model, considering the external constraints imposed by rigid substrates. Optimum compositions of composite cathode materials with high volume fractions of the second phase (particles dispersed in matrix) have been analyzed using the bimodal packing model. Constrained sintering of thin electrolyte layers is also discussed in terms of bimodal packing, with emphasis on the clustering of dispersed particles during anisotropic shrinkage. Finally, the structural transition of dispersed particle clusters during constrained sintering has been correlated with the structural stability of thin-film electrolyte layers deposited on porous solid substrates.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.211-211
• /
• 2011

Nanostructures, with a diversity of shapes, built on substrates have been developed within many research areas. Lithography is one powerful, but complex, technique to make structures at the nanometer scale, such as platinum nanowires for studying CO catalytic reactions [1], or aluminum nanodisks for studying the plasmon effect [2]. In this work, we approach a facile method to construct nanostructures using noble metals on a titania thin film by using self-assembled structures as a pattern. Here, a large-scale silica monolayer is transferred to the titania thin film substrates using a Langmuir-Blodgett trough, followed by the deposition of a thin transition metal layer. Owing to the hexagonal close-packed structure of the silica monolayer, we would obtain a metal nanostructure that includes separated metallic triangles (islands) after removing the patterning silica beads. This nanostructure can be employed to investigate the role of metal-oxide interfaces in CO catalytic reactions by changing the patterning silica particles with different sizes or by replacing the oxide support. The morphology and chemical composition of the structure can be characterized by scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. In addition, we modify these islands to a connected island structure by reducing the silica size of the patterning monolayer, which is utilized to generating hot electron flow based on the localized surface plasmon resonance effect of the metal nanostructures.

• ETRI Journal
• /
• v.27 no.4
• /
• pp.405-410
• /
• 2005

High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.30 no.1
• /
• pp.12-16
• /
• 2020

Indium tin oxide (ITO) films were prepared onto transparent polyimide (PI) substrates by RF magnetron sputtering at room temperature. The deposited ITO films were heat-treated at various temperatures (50, 100, 150, and 200℃). The effect of post heat-treatment temperature on structural, electrical and optical properties of ITO films were investigated. It was found that the as-deposited ITO films were amorphous and the degree of crystallinity and the grain size increased with an increasing heat-treatment temperature, which led to the increase in carrier concentration and mobility. The electrical resistivity of as-deposited ITO films was 2.73 × 10^-3 Ω·cm. With the heat-treatment temperature increasing from 50 to 200℃, the electrical resistivity decreased from 2.93 × 10^-3 to 1.21 × 10^-4 Ω·cm. The average transmittance (400~800 nm) of the ITO deposited PI substrates was decreasing with post heat-treatment temperature and was above 81 % for the temperatures 50~150℃ and decreased considerably to 78 % at 200℃.

• Journal of the Korean Ceramic Society
• /
• v.43 no.6 s.289
• /
• pp.362-368
• /
• 2006

Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$ (BSTO) thin films have been grown on TiN buffered Si (001) substrates by Pulsed Laser Deposition (PLD) method and the effects of substrate temperature and oxygen partial pressure during the deposition on their dielectric properties and crystallinity were investigated. The crystal orientation, epitaxy nature, and microstructure of oxide thin films were investigated using X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). Thin films were prepared with laser fluence of $4.2\;J/cm^2\;and\;3\;J/cm^2$, repetition rate of 8 Hz and 10 Hz, substrate temperatures of $700^{\circ}C$ and ranging from $350^{\circ}C\;to\;700^{\circ}C$ for TiN and oxide respectively. BSTO thin-films were grown on TiN-buffered Si substrates at various oxygen partial pressure ranging from $1{\times}10^{-4}$ torr to $1{\times}10^{-5}$ torr. The TiN buffer layer and BSTO thin films were grown with cube-on-cube epitaxial orientation relationship of $[110](001)_{BSTO}{\parallel}[110](001)_{TiN}{\parallel}[110](001)_{Si}$. The crystallinity of BSTO thin films was improved with increasing substrate temperature. C-axis lattice parameters of BSTO thin films, calculated from XRD ${\theta}-2{\theta}$ scans, decreased from 0.408 m to 0.404 nm and the dielectric constants of BSTO epitaxial thin films increased from 440 to 938 with increasing processing oxygen partial pressure.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.352.1-352.1
• /
• 2014

Indium Tin Oxide (ITO) films are the most extensively studied and commonly used as ones of TCO films. The ITO films having a high electric conductivity and high transparency are easily fabricated on glass substrate at a substrate temperature over $250^{\circ}C$. However, glass substrates are somewhat heavy and brittle, whereas plastic substrates are lightweight, unbreakable, and so on. For these reasons, it has been recently suggested to use plastic substrates for flexible display application instead of glass. Many reaearchers have tried to produce high quality thin films at rood temperatures by using several methods. Therefore, amorphous ITO films excluding thermal process exhibit a decrease in electrical conductivity and optical transparency with time and a very poor chemical stability. However the amorphous Indium Gallium Zinc Oxide (IGZO) offers several advantages. For typical instance, unlike either crystalline or amorphous ITO, same and higher than a-IGZO resistivity is found when no reactive oxygen is added to the sputter chamber, this greatly simplifies the deposition. We reported on the characteristics of a-IGZO thin films were fabricated by RF-magnetron sputtering method on the PEN substrate at room temperature using 3inch sputtering targets different rate of Zn. The homogeneous and stable targets were prepared by calcine and sintering process. Furthermore, two types of IGZO TFT design, a- IGZO source/drain material in TFT and the other a- ITO source/drain material, have been fabricated for comparison with each other. The experimental results reveal that the a- IGZO source/drain electrode in IGZO TFT is shown to be superior TFT performances, compared with a- ITO source/drain electrode in IGZO TFT.

• Journal of Information Display
• /
• v.2 no.2
• /
• pp.52-60
• /
• 2001

The electrical and mechanical properties in indium-tin-oxide films deposited on polymer substrate were examined. The materials of substrates were polyethersulfone (PES) which have gas barrier layer and anti-glare coating for plastic-based devices. The experiments were performed by rf-magnetron sputtering using a special instrument and buffer layers. Therefore, we obtained a very flat polymer substrate deposited ITO film and investigated the effects of buffer layers, and the instrument. Moreover, the influences of an oxygen partial pressure and post-deposition annealing in ITO films deposited on polymer substrates were clarified. X-ray diffraction observation, measurement of electrical property, and optical microscope observation were performed for the investigation of micro-structure and electro-mechanical properties, and they indicated that as-deposited ITO thin films are amorphous and become quasi-crystalline after adjusting oxygen partial pressure and thermal annealing above $180^{\circ}C$. As a result, we obtained 20-25 ${\Omega}/sq$ of ITO films with good transmittance (above 80 %) of oxygen contents with under 0.2 % and vacuum annealing. Furthermore, using organic buffer layer, we obtained ITO films which have a rather high electrical resistance (40-45 ${\Omega}/sq$) but have improved optical (more than 85 %) and mechanical characteristics compared to the counterparts. Consequently, a prototype reflective color plastic film LCD was fabricated using the PES polymer substrates to confirm whether the ITO films could be realized in accordance with our experimental results.