• Journal of the Korean Vacuum Society
• /
• v.16 no.4
• /
• pp.279-285
• /
• 2007

We have demonstrated structural evolution and optical properties of the Si-NWs on Si (111) substrates with synthesized nanoscale Au-Si islands by rapid thermal chemical vapor deposition(RTCVD). Au nano-islands (10-50nm in diameter) were employed as a liquid-droplet catalysis to grow Si-NWs via vapor-liquid-solid mechanism. Si-NWs were grown by a mixture gas of $SiH_4\;and\;H_2$ at pressures of $0.1{\sim}1.0$Torr and temperatures of $450{\sim}650^{\circ}C$. SEM measurements showed the formation of Si-NWs well-aligned vertically for Si (111) surfaces. The resulting NWs are 30-100nm in diameter and $0.4{\sim}12um$ in length depending on growth conditions. HR-TEM measurements indicated that Si-NWs are single crystals convered with about 3nm thick layers of amorphous oxide. In addition, optical properties of NWs were investigated by micro-Raman spectroscopy. The downshift and asymmetric broadening of the Si optical phonon peak with a shoulder at $480cm^{-1}$ were observed in Raman spectra of Si-NWs.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.134-134
• /
• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Journal of Conservation Science
• /
• v.33 no.5
• /
• pp.371-380
• /
• 2017

To investigate the pigments used in modern and contemporary oil paintings, thirty-two paintings by Jiho Oh and Bonung Gu were selected. The white pigment found in the ground and painting layers was identified as lead white (hydrocerussite), zinc white (zinc oxide), titanium white (titanium dioxide in anatase or rutile forms), calcite (calcium carbonate), and barite (barium sulfate). Further, this indicated that pigments differ according to the artist and date of the painting's creation. However, both Oh and Gu used zinc white during the modern and contemporary period, while lead white was replaced by titanium white, barite and calcite. Compared with the overseas studies on pigments and oil paints, the change patterns of pigments were the same with them but the periods of the use were partially different. It seems to be due to the fact that South Korea is linked to the historical background of the art material which was imported from Japan instead of Western countries. Therefore, it is inevitable that any change in the white pigments used for domestic oil paintings occurred at a different time from global transitions. If the results of this study are used in the analysis of art works it is suggested that a database recording such aspects as material properties of oil paints, artistic techniques, and chronology would become important for future conservation science and the study of art history.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.142.2-142.2
• /
• 2018

One-dimensional metal oxide nanostructures have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. In which, semiconducting $SnO_2$ material with wide-bandgap Eg = 3.6 eV at room temperature, is one of the attractive candidates for optoelectronic devices operating at room temperature [1, 2], gas sensor [3, 4], and transparent conducting electrodes [5]. The synthesis and gas sensing properties of semiconducting $SnO_2$ nanomaterials have become one of important research issues since the first synthesis of SnO2 nanowires. In this study, $SnO_2$ nanowire networks were synthesized on a basis of a two-step process. In step 1, Sn spheres (30-800 nm in diameter) embedded in $SiO_2$ on a Si substrate was synthesized by a chemical vapor deposition method at $700^{\circ}C$. In step 2, using the source of these Sn spheres, $SnO_2$ nanowire (20-40 nm in diameter; $1-10{\mu}m$ in length) networks on a spherical Sn surface were synthesized by a thermal oxidation method at $800^{\circ}C$. The Au layers were pre-deposited on the surface of Sn spherical and subsequently oxidized Sn surface of Sn spherical formed SnO2 nanowires networks. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that $SnO_2$ nanowires are single crystalline. In addition, the $SnO_2$ nanowire is also a tetragonal rutile, with the preferred growth directions along [100] and a lattice spacing of 0.237 nm. Subsequently, the $NO_2$ sensing properties of the $SnO_2$ network nanowires sensor at an operating temperature of $50-250^{\circ}C$ were examined, and showed a reversible response to $NO_2$ at various $NO_2$ concentrations. Finally, details of the growth mechanism and formation of Sn spheres and $SnO_2$ nanowire networks are also discussed.

• Journal of Sensor Science and Technology
• /
• v.6 no.6
• /
• pp.476-482
• /
• 1997

A portable electronic nose system has been fabricated and characterized using an oxide semiconductor gas sensor array and pattern recognition techniques such as principal component analysis and back-propagation artificial neural network. The sensor array consists of six thick-film gas sensors whose sensing layers are Pd-doped $WO_{3}$, Pt-doped $SnO_{2}$, $TiO_{2}-Sb_{2}O_{5}-Pd$-doped $SnO_{2}$, $TiO_{2}-Sb_{2}O_{5}-Pd$-doped $SnO_{2}$ + Pd coated layer, $Al_{2}O_{3}$-doped ZnO and $PdCl_{2}$-doped $SnO_{2}$. The portable electronic nose system consists of an 16bit Intel 80c196kc as CPU, an EPROM for storing system main program, an EEPROM for containing optimized connection weights of artificial neural network, an LCD for displaying gas concentrations. As an application the system has been used to identify 26 carbon monoxide/hydrocarbon (CO/HC) car exhausting gases in the concentration range of CO 0%/HC 0 ppm to CO 7.6%/HC 400 ppm and the identification has been successfully demonstrated.

• Applied Microscopy
• /
• v.42 no.2
• /
• pp.87-93
• /
• 2012

In this study, fine structures of silica, titanium dioxide, talc and kaolin used in decorative cosmetics and the mixture extracted from BB cream cosmetics were observed by scanning electron microscopy. Kaolin had plate like shape structures of polygon with smooth surface and edge of kaolin had a relatively smooth appearance in comparison with talc. Also, thickness of each layer was estimated to about $0.1{\mu}M$ in the lump formed in stratum of several layers. Talc was observed by lumps shape phase of layering very thin flake. Boundary of thin flake was sharp or angular phase and thickness of flake was approximately 600 nm in diameter. When comparing the thickness of kaolin and talc, we was confirmed that kaolin was thicker than talc. Diameter of titanium dioxide was estimated to 0.2~0.3 ${\mu}M$ and surface of particle was a soft cubic form. Silica was confirmed that variety of size from 200 nm to $15{\mu}M$ of globular shape was measured. From the observation of inorganic pigments, silica was homogeneous dispersed in the BB cream cosmetics and among each other was filled with relatively small size like talc, kaolin, titanium dioxide and iron oxide. In conclusion, we suggest that silica at decorative cosmetics were formed in cosmetic coat at the skin as the minimum thickness.

• Korean Journal of Agricultural and Forest Meteorology
• /
• v.1 no.2
• /
• pp.160-164
• /
• 1999

Subsurface environments, including the intermediate vadose zone and aquifers, may be contributing to increased atmospheric concentrations of $N_2$O. Denitrification appears to be the major source of $N_2$O in the subsurface environment. In the intermediate vadose zone, the level of denitrifying activity is dependent on the soil morphology, particularly stratified layers within the soil profile, which impede water and solute movement and create conditions favorable for denitrification. Movement of organic C from the soil surface appears to support denitrifying activity by providing an energy source and increasing the consumption of $O_2$. Denitrirication and $N_2$O production have been observed in aquifers but appear to be of greatest significance in shallow unconfined aquifers. The lack of organic C, N $O_2$, or anaerobiosis is often a limiting factor for activity but seems to be site specific. The presence of denitrifying bacteria does not appear to be a major limitation, based on published results, but the ubiquity of denitrifiers in subsurface environments needs to be confirmed. The fate of the $N_2$O produced in subsurface environments is unknown. Transport of $N_2$O by up ward diffusion, by outgassing at contacts with surface waters, and by ground water use need to be quantified to determine the contribution to atmospheric $N_2$O. Contamination of subsurface environment with N $O_3$$^{ }$ and organics has the potential for increasing the contribution to atmospheric $N_2$O by enhancing denitrification .

• Journal of the Korean Ceramic Society
• /
• v.39 no.7
• /
• pp.649-656
• /
• 2002

In situ patterned zinc oxide thin films were prepared by precipitation of Zn(NO$_3$)$_2$ aqueous solution containing urea and by microcontact printing using Self-Assembled Monolayers(SAMs) on A1/SiO$_2$/Si substrates. The visible precipitation of Zn(OH)$_2$ that was formed in the Zn(NO$_3$)$_2$ aqueous solution containing urea was enhanced with an increase of the reaction temperature and the amount of urea. As the reaction time of Zn(NO$_3$)$_2$ with urea was prolonged, the thickness and grain size of Zn(OH)$_2$ thin layers were increased, respectively. The optimum precipitation condition was at 80$\^{C}$ for 1 h for the solution with the ratio of Zn(NO$_3$)$_2$ to urea of 1 : 8. Homogeneous ZnO thin films were fabricated by the heat treatment of 600$\^{C}$ for 1 h of Zn(OH)$_2$ precipitation on Al/SiO$_2$/Si substrate. This was available to the in-situ patterned ZnO thin films with uniform grain size. Hydrophobic SAM, Octadecylphosphonic Acid(OPA) and hydrophilic SAM, 2-Carboxyethylphosphonic Acid(CPA) were applied on the Al/SiO$_2$/Si substrate by microcontact printing method. In situ patterned ZnO thin film was successfully prepared by the heat treatment of Zn(OH)$_2$ precipitated on the surface of hydrophilic SAM, CPA.

• Korean Journal of Materials Research
• /
• v.9 no.10
• /
• pp.1025-1031
• /
• 1999

Alloys of TiAl with six different compositions. i. e., Ti-(42, 44)Al-2Nb-4V. Ti-(42, 44)Al-4Nb-2V and Ti -(42, 44)Al-4Nb-2Cr, were manufactured by arc-melting. and their oxidation behavior was studied. Both isothermal and cyclic oxidation tests were performed at 700, 800 and $900^{\circ}C$ in air for 50hr. The oxidation resistance increased in the order of Ti-(42, 44)Al-2Nb-4V, Ti-(42, 44)Al-4Nb-ZV and Ti-(42, 44)Al-4Nb-2Cr. It was found that V was a deleterious element, while Cr was a beneficial element in terms of oxidation resistance. During oxidation, a simultaneous interdiffusion was observed. All the constituent elements in the base alloys diffused outward. whereas oxygen from the atmosphere diffused inward, to form triple oxide layers composed of an outermost $\textrm{TiO}_2$ layer. upper ($\textrm{TiO}_2+\textrm{Al}_2\textrm{O}_3$) mixed layer, and lower $\textrm{TiO}_2$-rich layer.

• Korean Journal of Materials Research
• /
• v.8 no.12
• /
• pp.1115-1120
• /
• 1998

The sliding wear behavior of Ni-base hardfacing alloy, Deloro 50, was investigated at the contact stresses of 15ksi and 30ksi under the various wear environments. In air at room temperature, Deloro 50 showed lower wear resistance than Stellite 6 even at 15ksi due to the occurrence of severe adhesive wear. This seems to be caused by the lower hardness and work- hardening rate of Deloro 50 than those of Stellite 6. In water at room temperature, Deloro 50 showed as good wear resistance as Stellite 6 at 15ksi. It was considered to be due to that water could effectively prevent metal to metal contact through contacting asperities. However, Deloro 50 showed severe adhesive wear at 30ksi in water at room temperature. It seems to be that the water could not suppress adhesion wear at 30ksi. At $300^{\circ}C$ in air, Deloro 50 exhibited higher wear resistance than Stellite 6 even at 30ksi. It was considered that the oxide glaze layers formed on wear surface during sliding, effectively prevented direct metal-to-metal contacts.