• Title/Summary/Keyword: Oxide layers

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Impedance Characteristics of Oxide Layers on Aluminium

  • 오한준;장경욱;치충수
    • Bulletin of the Korean Chemical Society
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    • v.20 no.11
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    • pp.1340-1344
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    • 1999
  • The electrochemical behavior of oxide layers on aluminium was studied using electrochemical impedance spectroscopy. Impedance spectra were taken at a compact and a porous oxide layer of Al. The anodic films on Al have a variable stoichiometry with gradual reduction of oxygen deficiency towards the oxide-electrolyte interface. Thus, the interpretation of impedance spectra for oxide layers is complicated, with the impedance of surface layers differing from those of ideal capacitors. This layer behavior with conductance gradients was caused by an inhomogeneous dielectric. The frequency response cannot be described by a single RC element. The oxide layers of Al are properly described by the Young model of dielectric constant with a vertical decay of conductivity.

Aluminum Based Oxide/Metal/Oxide Structures for the Application in Transparent Electrodes (알루미늄 기반 Oxide/Metal/Oxide 구조의 투명전극 적용성 기초 연구)

  • Kim, Daekyun;Choi, Dooho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.7
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    • pp.481-485
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    • 2018
  • In this study, oxide/metal/oxide-type transparent electrodes based on Al and ZnO were investigated. Thin films of these materials were sputter-deposited at room temperature. To evaluate the thickness dependence of the oxide layers, the top and bottom ZnO layers were varied in the range of 5~80 nm and 2.5~20 nm, respectively. When the thicknesses of the top and bottom ZnO layers were fixed at 30 nm and 2.5 nm, a maximum transmitance of 66% and sheet resistance of $16.5{\Omega}/{\square}$ were achieved, which is significantly improved compared with the Al layer without top and bottom ZnO layers showing a maximum transmitance of 44.3% and sheet resistance of $44{\Omega}/{\square}$.

Characteristics of Oxide Layers Formed on Al2021 Alloys by Plasma Electrolytic Oxidation in Aluminate Fluorosilicate Electrolyte

  • Wang, Kai;Koo, Bon-Heun;Lee, Chan-Gyu;Kim, Young-Joo;Lee, Sung-Hun;Byon, Eung-Sun
    • Journal of the Korean institute of surface engineering
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    • v.41 no.6
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    • pp.308-311
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    • 2008
  • Oxide layers were prepared on Al2021 alloys substrate under a hybrid voltage of AC 200 V (60 Hz) combined with DC 260 V value at room temperature within $5{\sim}60\;min$ by plasma electrolytic oxidation (PEO). An optimized aluminate-fluorosilicate solution was used as the electrolytes. The surface morphology, thickness and composition of layers on Al2021 alloys at different reaction times were studied. The results showed that it is possible to generate oxide layers of good properties on Al2021 alloys in aluminate-fluorosilicate electrolytes. Analysis show that the double-layer structure oxide layers consist of different states such as ${\alpha}-{Al_2}{O_3}$ and ${\gamma}-{Al_2}{O_3}$. For short treatment times, the formation process of oxide layers follows a linear kinetics, while for longer times the formation process slows down and becomes a steady stage. During the PEO processes, the average size of the discharge channels increased gradually as the PEO treatment time increased.

High Power Single Mode Multi-Oxide Layer VCSEL with Optimized Thicknesses and Aperture Sizes of Oxide Layers

  • Yazdanypoor, Mohammad;Emami, Farzin
    • Journal of the Optical Society of Korea
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    • v.18 no.2
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    • pp.167-173
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    • 2014
  • A novel multi-oxide layer structure for vertical cavity surface emitting laser (VCSEL) structures is proposed to achieve higher single mode output power. The structure has four oxide layers with different aperture sizes and thicknesses. The oxide layer thicknesses are optimized simultaneously to reach the highest single mode output power. A heuristic method is proposed for plotting the influence of these variable changes on the operation of optical output power. A comprehensive optical-electrical thermal-gain self-consistent VCSEL model is used to simulate the continuous-wave operation of the multi-layer oxide VCSELs. A comparison between optimized VCSELs with different structures is presented. The results show that by using multi-oxide layers with different thicknesses, higher single-mode optical output power could be achieved in comparison with multi-oxide layer structures with the same thicknesses.

Influence of Electrolytic KF on the Uniform Thickness of Oxide Layers Formed on AZ91 Mg Alloy by Plasma Electrolytic Oxidation

  • Song, Duck-Hyun;Lim, Dae-Young;Fedorov, Vladimir;Song, Jeong-Hwan
    • Korean Journal of Materials Research
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    • v.27 no.9
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    • pp.495-500
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    • 2017
  • Oxide layers were formed by an environmentally friendly plasma electrolytic oxidation (PEO) process on AZ91 Mg alloy. PEO treatment also resulted in strong adhesion between the oxide layer and the substrate. The influence of the KF electrolytic solution and the structure, composition, microstructure, and micro-hardness properties of the oxide layer were investigated. It was found that the addition of KF instead of KOH to the $Na_2SiO_3$ electrolytic solution increased the electrical conductivity. The oxide layers were mainly composed of MgO and $Mg_2SiO_4$ phases. The oxide layers exhibited solidification particles and pancake-shaped oxide melting. The pore size and surface roughness of the oxide layer decreased considerably with an increase in the concentration of KF, while densification of the oxide layers increased. It is shown that the addition of KF to the basis electrolyte resulted in fabricating of an oxide layer with higher surface hardness and smoother surface roughness on Mg alloys by the PEO process. The uniform thickness of the oxide layer formed on the Mg alloy substrates was largely determined by the electrolytic solution with KF, which suggests that the composition of the electrolytic solution is one of the key factors controlling the uniform thickness of the oxide layer.

Low Emissivity Property of Amorphous Oxide Multilayer (SIZO/Ag/SIZO) Structure

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.1
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    • pp.13-15
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    • 2017
  • Low emissivity glass for high transparency in the visible range and low emissivity in the IR (infrared) range was fabricated and investigated. The multilayers were have been fabricated, and consisted of two outer oxide layers and a middle layer of Ag as a metal layer. Oxide layers were formed by rf sputtering and metal layers were formed using by an evaporator at room temperature. SiInZnO (SIZO) film was used as an oxide layer. The OMO (oxide-metaloxide) structures of SIZO/Ag/SIZO were analyzed by using transmittance, AFM (atomic force microscopye), and XRD (X-ray diffraction). The OMO multilayer structure was designed to investigate the effect of Ag layer thickness on the optical property of the OMO structure.

Effects of Hydration Treatments on the Phase Transition of Anodic Aluminum Oxide Layers (알루미늄 양극산화 피막의 상전이에 미치는 수화처리의 영향)

  • Joo, E.K.;Kim, S.S.;Oh, H.J.;Cho, S.H.;Chi, C.S.
    • Korean Journal of Materials Research
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    • v.12 no.7
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    • pp.540-544
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    • 2002
  • Hydration treatments were performed on the pure aluminum substrate at $100^{\circ}C$ followed by anodizing and heat treatments on the layers. The transformation behaviors of the oxide layers according to the hydration treatment were studied using TEM, XRD, RBS etc. Above $90^{\circ}C$ the hydrous oxide film could be formed, which were turned out to be hydrous oxides(AlOOH $nH_2$O). The anodization on the hydrous oxide film was more effective for the transition of amorphous anodic oxides to the crystalline $\Upsilon-Al_2$ $O_3$ comparing with the case for anodizing on the aluminum substrate without hydration treatment And additional heat treatments were also helpful for the acceleration of the transformation of the hydrous oxide to $\Upsilon-Al_2$ $O_3$. During the heat treatment the interface between $\Upsilon-Al_2$ $O_3$and the hydrous oxide layers migrated to the outer side of hydrous layer.

Improvement of source-drain contact properties of organic thin-film transistors by metal oxide and molybdenum double layer

  • Kim, Keon-Soo;Kim, Dong-Woo;Kim, Doo-Hyun;Kim, Hyung-Jin;Lee, Dong-Hyuck;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.270-271
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    • 2008
  • The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

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Comparison of oxide layers formed on the low-cycle fatigue crack surfaces of Alloy 690 and 316 SS tested in a simulated PWR environment

  • Chen, Junjie;Nurrochman, Andrieanto;Hong, Jong-Dae;Kim, Tae Soon;Jang, Changheui;Yi, Yongsun
    • Nuclear Engineering and Technology
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    • v.51 no.2
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    • pp.479-489
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    • 2019
  • Low-cycle fatigue (LCF) tests were performed for Alloy 690 and 316 SS in a simulated pressurized water reactor (PWR) environment. Alloy 690 showed about twice longer LCF life than 316 SS at the test condition of 0.4% amplitude at strain rate of 0.004%/s. Observation of the oxide layers formed on the fatigue crack surface showed that Cr and Ni rich oxide was formed for Alloy 690, while Fe and Cr rich oxide for 316 SS as an inner layer. Electrochemical analysis revealed that the oxide layers formed on the LCF crack surface of Alloy 690 had higher impedance and less defect density than those of 316 SS, which resulted in longer LCF life of Alloy 690 than 316 SS in a simulated PWR environment.

Improvement of hole transport from p-Si with interfacial layers for silicon solar cells

  • Oh, Gyujin;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.239.2-239.2
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    • 2016
  • Numerous studies and approaches have been performed for solar cells to improve their photoelectric conversion efficiencies. Among them, the study for electrode containing transparent conducting oxide (TCO) layers is one of issues as well as for the cell structure based on band theory. In this study, we focused on an interfacial layer between p-type silicon and indium tin oxide (ITO) well-known as TCO materials. According to current-voltage characteristics for the sample with the interfacial layers, the improvement of band alignment between p-type silicon and ITO was observed, and their ohmic properties were enhanced in the proper condition of deposition. To investigate cause of this improvement, spectroscopic ellipsometry and ultraviolet photoelectron spectroscopy were utilized. Using these techniques, band alignment and defect in the band gap were examined. The major materials of the interfacial layer are vanadium oxide and tungsten oxide, which are notable as a hole transfer layer in the organic solar cells. Finally, the interfacial layer was applied to silicon solar cells to see the actual behavior of carriers in the solar cells. In the case of vanadium oxide, we found 10% of improvement of photoelectric conversion efficiencies, compared to solar cells without interfacial layers.

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